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Infineon
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Part No. |
SPP10N10L
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OCR Text |
...urn-on delay time t d(on) v dd =50v, v gs =10v, i d =10.3a, r g =13 - 4.6 6.9 ns rise time t r - 19.1 28.7 turn-off delay time t d(off) - 27.8 41.7 fall time t f - 17.8 26.7 gate charge characteristics gate to source charge q gs v dd ... |
Description |
Power MOSFET, 100V, TO-220, RDSon=154mOhm, 10A, LL
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File Size |
214.25K /
8 Page |
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SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics]
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Part No. |
AN908
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OCR Text |
...scon 33nF 680pF 150pF 220pF 47F/50V 5.6nF C16 C17 C18 C19 C20-22 Q1 Q2 Q3 D1 D2-5 IC1 IC2 IC3 L1 L2 L3 1F/50V 220nF 1.2nF 1F/50V 220nF STP80...3A-12.5V C5-8 330F-5.3V SANYO OSCON
L4990A
RCT IC1 2 12 PGND 11 VFB 5 COMP C11 150pF 6 SS 7 ISEN... |
Description |
HIGH PERFORMANCE VRM USING L4990A, FOR PENTIUM PRO PROCESSOR APPLICATION NOTE
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File Size |
87.63K /
9 Page |
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SANYO
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Part No. |
2SK3617
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OCR Text |
...unit total gate charge qg v ds =50v, v gs =10v, i d =6a 13 nc gate-to-source charge qgs v ds =50v, v gs =10v, i d =6a 2.1 nc gate-to-drain m...3a r l =16.7 w v dd =50v v out v in d 2sk3617 0 0 0.5 1.0 1.5 5.0 3.5 1.0 3.0 2.5 2.0 4.0 4.5 2.0 3.... |
Description |
Medium Output MOSFETs
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File Size |
58.48K /
4 Page |
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SANYO[Sanyo Semicon Device]
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Part No. |
2SK3617
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OCR Text |
...l Qg Qgs Qgd VSD Conditions VDS=50V, VGS=10V, ID=6A VDS=50V, VGS=10V, ID=6A VDS=50V, VGS=10V, ID=6A IS=6A, VGS=0 Ratings min typ 13 2.1 2.8 ...3A RL=16.7 VIN PW=10s D.C.1%
D
VOUT
G
P.G
50
S
2SK3617
5.0 4.5 4.0
ID -- ... |
Description |
General-Purpose Switching Device Applications
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File Size |
43.77K /
4 Page |
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ST Microelectronics
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Part No. |
VNQ600AP
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OCR Text |
...ls delays and impedance 1 -25v -50v -75v -100v 2ms, 10 w 2 +25v +50v +75v +100v 0.2ms, 10 w 3a -25v -50v -100v -150v 0.1 m s, 50 w 3b +25v +50v +75v +100v 0.1 m s, 50 w 4 -4v -5v -6v -7v 100ms, 0.01 w 5 +26.5v +46.5v +66.5v +86.5v 400ms, 2 ... |
Description |
QUAD CHANNEL HIGH SIDE SOLID STATE RELAY
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File Size |
246.09K /
18 Page |
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it Online |
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Price and Availability
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