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4VHC2 C5003 TDE17980 EQS04 CEP6060L AT54A SK100 BA9040
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  0.0052 Datasheet PDF File

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    Fuji Semiconductors
Part No. 2SK2642-01MR
OCR Text ... Drain(D) Source(S) *1 L=0.72mH, Vcc=50V Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS Min. Typ. Max. Units V V A mA nA S pF 500 3.5 IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV VSD trr Qrr VDS=500V ...
Description N-Channel Silicon Power MOSFET

File Size 116.29K  /  4 Page

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    2SK2740 K2740

ROHM[Rohm]
Part No. 2SK2740 K2740
OCR Text ... Destruction. Appendix1-Rev1.0
Description Switching (600V, 7A)

File Size 151.20K  /  5 Page

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    2SK2796L 2SK2796S 2SK2796

HITACHI[Hitachi Semiconductor]
Part No. 2SK2796L 2SK2796S 2SK2796
OCR Text ... * Low on-resistance R DS(on) = 0.12 typ. * 4V gate drive devices. * High speed switching Outline DPAK |1 4 4 D 12 G 3 S 12 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2796(L), 2SK2796(S) Absolute Maximum Ratings...
Description Silicon N Channel MOS FET High Speed Power Switching

File Size 53.56K  /  10 Page

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    2SK3294-S 2SK3294-Z 2SK3294-ZJ 2SK3294

NEC
Part No. 2SK3294-S 2SK3294-Z 2SK3294-ZJ 2SK3294
OCR Text ...1500 pF TYP. (VDS = 10 V, VGS = 0 V) * Avalanche capability rated * Built-in gate protection diode * Surface mount device available (TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltag...
Description Power MOS FET

File Size 82.70K  /  9 Page

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    TOSHIBA
Part No. 2SK3566
OCR Text ...0 -55~150 A W mJ A mJ C C Unit 0.690.15 2.8Max V V V 2.540.25 0.640.15 2.540.25 2.6 Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche ene...
Description MOSFET 2SK/2SJ Series

File Size 192.08K  /  4 Page

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    2SK3918 2SK3918-ZK

NEC, Corp.
NEC Corp.
NEC[NEC]
Part No. 2SK3918 2SK3918-ZK
OCR Text ... Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 25 20 48 192 29 1.0 150 -55 to +150 22 48 V V A A W W C ...
Description SWITCHING N-CHANNEL POWER MOSFET 开关N沟道功率MOSFET

File Size 155.49K  /  8 Page

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    2SK741

Hitachi Semiconductor
Part No. 2SK741
OCR Text ...st conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 200 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 4 A, VGS = 10 V * ID = 4 A, VDS = 10 V * VDS = 10 V, VGS = 0, f = 1 MHz -------------------------------------------...
Description Silicon N-Channel MOS FET

File Size 38.00K  /  7 Page

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    30BQ040TR 30BQ040TRPBF 30BQ040 30BQ040PBF

IRF[International Rectifier]
Part No. 30BQ040TR 30BQ040TRPBF 30BQ040 30BQ040PBF
OCR Text ... IFSM @ t p= 5 s sine VF TJ @ 3.0 Apk, TJ = 125C range Description/ Features The 30BQ040 surface-mount Schottky rectifier has been designed for applications requiring low forward drop and small foot prints on PC boards. Typical applicat...
Description SCHOTTKY RECTIFIER

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    Microsemi
Part No. 30KP33A 30KP33CA 30KP70CA 30KP260A
OCR Text ... repetition rate (duty factor): 0.05% tclamping (0 volts to V(BR) min.): < 100 ps theoretical for unidirectional and < 5 ns for bidirectional Operating & Storage temperature: -65C to +150C Thermal resistance: 17.5C/W junction to lead, or 77...
Description Transient Voltage Suppressor

File Size 183.24K  /  4 Page

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    3329H 3329H200 3329H205 3329H501 3329H502 3329H503 3329H500 3329H504 3329H100 3329H101 3329H102 3329H103 3329H104 3329H1

DBLECTRO[DB Lectro Inc]
Part No. 3329H 3329H200 3329H205 3329H501 3329H502 3329H503 3329H500 3329H504 3329H100 3329H101 3329H102 3329H103 3329H104 3329H105 3329H254 3329H201 3329H202 3329H203 3329H204 3329H253
OCR Text ...................................0.25W@70,0W@125 Temperature Range.........................-55 125 Standard Resistance Table Resistance(Ohms) 10 20 50 100 200 500 1,000 2,000 5,000 10,000 20,000 25,000 50,000 100,000 200,000 250,000 500,...
Description 6.8×4.7 Circularity/ Single Turn /Trimming Potentiometer
6.8】4.7 Circularity/ Single Turn /Trimming Potentiometer

File Size 190.90K  /  1 Page

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