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International Business Machines, Corp.
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| Part No. |
POWERPC603E POWERPCEM603E
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| OCR Text |
...y technology technology 100 mhz 0.5m/0.46m l eff , cmos, 4 levels metal 166 mhz 0.35m/0.25m l eff , cmos, 5 levels metal 200 mhz 0.35m/0.18m l eff , cmos, 5 levels metal die size die size die size die size die size 100 mhz 8.4 mm x 11.67 m... |
| Description |
32-Bit PowerPC Reduced Instruction Set Computer (RISC) Microprocessor(32-PowerPC 精简指令集微处理 32位PowerPC精简指令集计算机（RISC）微处理器（32 -位PowerPC的精简指令集微处理器）
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| File Size |
64.25K /
2 Page |
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Shenzhen Jin Yu Semiconductor Co., Ltd.
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| Part No. |
PT8205
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| OCR Text |
... a x . a 1 . 10 m a x . l 0 . 45 r e f. a 1 0 0 . 10 l1 0 . 60 r e f . a 2 0 . 70 1 . 00 0 10 c 0 . 12 r e f. b 0 . 30 0 . 50 d 2 . 70 3 . 10 e 0 . 95 r e f. e 2 . 60 3 . 00 e 1 1 . 90 ... |
| Description |
20 V Dual N-Channel Enhancement Mode MOSFET
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| File Size |
2,425.55K /
3 Page |
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Sumida, Corp.
SUMIDA CORP
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| Part No. |
CDR6D28MN-470NC CDR6D28MN-470NB CDR10D48MN-100NB CDR10D48MN-560NC CDR10D48MN-470NC SUMIDACORP-CDR10D48MN-101NC CDR10D48MN-8R5NC
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| OCR Text |
0 6 1 power inductors < smd t ype : hybrid power inductors > smd t ype hybrid power inductors outline the dc superposition characteristi...46m ) 63.8m(51m ) 70.0m(56m ) 76.3m(61m ) 82.5m(66m ) 88.8m(71m ) 120m(96m ) 135m(108m ) 150m(121m )... |
| Description |
1 ELEMENT, 47 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 10 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 56 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 8.5 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
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| File Size |
449.49K /
4 Page |
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Fairchild Semiconductor, Corp.
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| Part No. |
FDA8440
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| OCR Text |
...al resistance, junction to case 0.6 o c/w r ja thermal resistance, junction to ambient (note 2) 40 o c/w t c = 25 o c unless otherwise noted
2 www.fairchildsemi.com fda8440 rev. a fd... |
| Description |
N-Channel PowerTrenchMOSFET 30 A, 40 V, 0.0041 ohm, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
298.24K /
8 Page |
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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
AON4413
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| OCR Text |
0 1.0 t j , t stg parameter symbol ty p max t 10s 34 40 steady state 66 80 steady state r jl 20 25 pulsed drain current b power dissip...46m ? (v gs = -10v) r ds(on) < 60m ? (v gs = -6v) the aon4413 uses advanced trench technology t... |
| Description |
P-Channel Enhancement Mode Field Effect Transistor
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| File Size |
423.22K /
4 Page |
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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
AON2407
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| OCR Text |
... gs(th) gate threshold voltage -0.4 -0.93 -1.5 v i d(on) -34 a 31 37.5 t j =125c 51.5 62 36.5 46 m w 50.3 70 m w g fs 24 s v sd -0.7 -1 v i s -3.5 a c iss 746 pf c oss 105 pf c rss 70 pf r g 9.5 19 w q g (10v) 17.2 21 nc q g (4.5v) 8 10 nc ... |
| Description |
30V P-Channel MOSFET
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| File Size |
289.61K /
5 Page |
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