...g
Unit: mm
0.40+0.10 -0.05 3
1.50+0.25 -0.05 2.8+0.2 -0.3
0.16+0.10 -0.06
1
2
(0.65)
Absolute Maximum Ratings Ta = 25C
Par...9 mA -8 mA -7 mA -6 mA -5 mA -4 mA -3 mA -2 mA -1 mA
120
-600
80
-400
40
-200
0...
... 2SD788
Outline
TO-92MOD
1. Emitter 2. Collector 3. Base 3 2 1
2SB738, 2SB739
Absolute Maximum Ratings (Ta = 25C)
Item Collector...9 150 -55 to +150 2SB739 -20 -20 -6 -2 0.9 150 -55 to +150 Unit V V V A W C C
Electrical Characte...
... 2SD789
Outline
TO-92MOD
1. Emitter 2. Collector 3. Base 3 2 1
2SB740
Absolute Maximum Ratings (Ta = 25C)
Item Collector to base...9 150 -55 to +150 Unit V V V A W C C
Electrical Characteristics (Ta = 25C)
Item Collector to bas...
...661 and 2SD661A
Unit: mm
6.90.1
0.4
q q q
2.40.2 2.00.2 3.50.1
Low noise voltage NV. High foward current transfer ratio hFE. M t...9 R0.9
1.00.1
R
0.
s Absolute Maximum Ratings
Parameter Collector to base voltage Colle...
Description
Silicon PNP epitaxial planer type(For low-frequency and low-noise amplification) 100 mA, 55 V, NPN, Si, SMALL SIGNAL TRANSISTOR
... -0.3 0.650.15
+0.2
+0.25 1.5 -0.05
0.650.15
2
1.1 -0.1
Parameter Collector to base voltage Collector to emitter voltage E...9 -0.05
1
1.90.2
+0.2
0.95
3
+0.1
1.45
Unit nA A V V V
-25 -20 -7 90 25 - 0...
...n Complementary to 2SD958
6.90.1 1.5 2.50.1 1.0
1.0 2.40.2 2.00.2 3.50.1
Unit: mm
s Features
q q q
1.5 R0.9 R0.9
0.85
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to ...
Description
Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)
...it: mm
s Features
q q
2.60.1
4.50.1 1.60.2
1.50.1
0.4max.
45
s Absolute Maximum Ratings
Parameter Collector to base vol...9 -12 -15
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Base current IB (...