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  1.05-7a Datasheet PDF File

For 1.05-7a Found Datasheets File :: 5159    Search Time::1.406ms    
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    FQA7N60

FAIRCHILD[Fairchild Semiconductor]
Part No. FQA7N60
OCR Text ...* * * * * 7.7A, 600V, RDS(on) = 1.0 @VGS = 10 V Low gate charge ( typical 29 nC) Low Crss ( typical 16 pF) Fast switching 100% avalanche tes...05 +0.15 12.76 0.20 19.90 0.20 16.50 0.30 3.00 0.20 1.00 0.20 3.50 0.20 2.00 0.20...
Description 600V N-Channel MOSFET

File Size 579.46K  /  8 Page

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    HGT1S7N60A4DS HGTG7N60A4D HGTP7N60A4D

FAIRCHILD[Fairchild Semiconductor]
Part No. HGT1S7N60A4DS HGTG7N60A4D HGTP7N60A4D
OCR Text ... Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to...05 / (t d(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON2 + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTO...
Description 600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600V SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600 V, SMPS N-Channel IGBT with Anti-Parallel Hyperfast Diode

File Size 140.21K  /  9 Page

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    HGT1S7N60A4S9A HGTG7N60A4 HGTP7N60A4

FAIRCHILD SEMICONDUCTOR CORP
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. HGT1S7N60A4S9A HGTG7N60A4 HGTP7N60A4
OCR Text ... Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to...05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON2 + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR...
Description 600V, SMPS Series N-Channel IGBT 34 A, 600 V, N-CHANNEL IGBT, TO-263AB
600V/ SMPS Series N-Channel IGBT
600V SMPS Series N-Channel IGBT

File Size 153.85K  /  8 Page

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    HGT1S7N60A4S HGTD7N60A4S HGTP7N60A4 HGTG7N60A4 FN4826

INTERSIL[Intersil Corporation]
Part No. HGT1S7N60A4S HGTD7N60A4S HGTP7N60A4 HGTG7N60A4 FN4826
OCR Text ...44,637 4,801,986 4,883,767 2-1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures....05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON2 + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR...
Description From old datasheet system
600V SMPS Series N-Channel IGBT
600V, SMPS Series N-Channel IGBT
600V/ SMPS Series N-Channel IGBT

File Size 166.85K  /  11 Page

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    HGT1S7N60B3DS HGTP7N60B3D HGT1S7N60B3DS9A

FAIRCHILD[Fairchild Semiconductor]
Part No. HGT1S7N60B3DS HGTP7N60B3D HGT1S7N60B3DS9A
OCR Text ... Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter...05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR ...
Description 14A/ 600V/ UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
14 A, 600 V, UFS N-Channel IGBT with Anti-Parallel Hyperfast Diode
14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 7A I(C) | TO-263AB

File Size 158.34K  /  8 Page

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    IRF7201 IRF7201PBF IRF7201TR

International Rectifier
Part No. IRF7201 IRF7201PBF IRF7201TR
OCR Text ...hing Description l l S S S G 1 8 A A D D D D 2 7 VDSS = 30V 3 6 4 5 RDS(on) = 0.030 Top View Fifth Gener...05 0.5 VGS = 10V 0.0 -60 -40 -20 0 20 40 60 80 VGS = 10V 100 120 140 160 A 0.00...
Description Generation V Technology
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package

File Size 111.54K  /  7 Page

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    IRF7311

IRF[International Rectifier]
Part No. IRF7311
OCR Text ...alanche Rated S1 G1 S2 G2 1 8 7 D1 D1 D2 D2 2 VDSS = 20V 3 6 4 5 RDS(on) = 0.029 T o p V ie w Descrip...05 RDS (on) , Drain-to-Source On Resistance () 300 EAS , Single Pulse Avalanche Energy (mJ)...
Description HEXFET Power MOSFET

File Size 154.76K  /  7 Page

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    IRF7313 IRF7313TR

IRF[International Rectifier]
Part No. IRF7313 IRF7313TR
OCR Text ...T(R) Power MOSFET S1 G1 S2 G2 1 8 7 D1 D1 D2 D2 2 VDSS = 30V RDS(on) = 0.029 3 6 4 5 Top View Fifth Generation HE...05 0.02 1 0.01 PDM t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 Notes: 1....
Description 30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package

File Size 542.53K  /  7 Page

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    IRF7316

IRF[International Rectifier]
Part No. IRF7316
OCR Text ...T(R) Power MOSFET S1 G1 S2 G2 1 2 3 4 8 7 D1 D1 D2 D2 VDSS = -30V RDS(on) = 0.058 6 5 Fifth Generation HEXFETs from Internatio...05 0.02 1 0.01 PDM t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 Notes: 1....
Description HEXFET POWER MOSFET

File Size 235.36K  /  7 Page

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    IRF7317

IRF[International Rectifier]
Part No. IRF7317
OCR Text ...G2 N -C H A N N EL M O S FET 1 8 N-Ch VDSS 20V P-Ch -20V 2 7 3 6 4 5 P -C H AN N E L MO S FET Description ...05 300 EAS , Single Pulse Avalanche Energy (mJ) RDS (on) , Drain-to-Source On Resistance ()...
Description 6.6 A, 20 V, 0.029 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MS-012AA
HEXFET Power MOSFET

File Size 147.74K  /  10 Page

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