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M61041FP 05351 SKY13 SMLG160 BT204 000T00 PSMN0 N6158A
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    IRF1104

IRF[International Rectifier]
Part No. IRF1104
OCR Text ...3 srew Max. 100 71 400 170 1.11 20 350 60 17 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units a W W/C V mJ a mJ V/...58 4) 1.15 (.04 5) M IN 1 2 3 LE a D a S S IG N M E N T S 1 - G aTE 2 - D R a IN 3 - SOURCE 4 ...
Description Power MOSFET(Vdss=40V/ Rds(on)=0.009ohm/ Id=100a)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100a?)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100a??
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100a)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100a?

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    IRF1310NL IRF1310NS

IRF[International Rectifier]
Part No. IRF1310NL IRF1310NS
OCR Text ...onds Max. 42 30 140 3.8 160 1.1 20 420 22 16 5.0 -55 to + 175 300 (1.6mm from case ) Units a W W W/C V mJ a mJ V/ns C Thermal Re...58 VGS = 10V, See Fig. 6 and 13 --- VDD = 50V --- ID = 22a ns --- RG = 3.6 --- RD = 2.9, See Fig. 1...
Description Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42a)

File Size 152.94K  /  10 Page

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    IRF1310N

IRF[International Rectifier]
Part No. IRF1310N
OCR Text ... M3 srew Max. 42 30 140 160 1.1 20 420 22 16 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units a W W/C V mJ a mJ V/n...58 VGS = 10V, See Fig. 6 and 13 --- VDD = 50V --- ID = 22a ns --- RG = 3.6 --- RD = 2.9, See Fig. 1...
Description Power MOSFET(Vdss=100V/ Rds(on)=0.036ohm/ Id=42a)
Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42a)

File Size 92.91K  /  8 Page

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    IRF1404

International Rectifier
Part No. IRF1404
OCR Text ... screw Max. 162 115 650 200 1.3 20 519 95 20 5.0 -55 to + 175 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units a W W/C ...58 4) 1.15 (.04 5) M IN 1 2 3 L E a D a S S IG NM E NT S 1 - GaTE 2 - D R a IN 3 - S O U RC E ...
Description Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162a?
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162a?)
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162a)
Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=162a)

File Size 105.33K  /  8 Page

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    IRF1704

International Rectifier
Part No. IRF1704
OCR Text ...3 srew Max. 170 120 680 230 1.3 20 670 100 23 1.9 -55 to + 200 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units a W W/C V mJ a m...58 4) 1.15 (.04 5) M IN 1 2 3 L E a D a S S IG NM E NT S 1 - GaTE 2 - D R a IN 3 - S O U RC E ...
Description Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170a?
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170a??
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170a)
POWER MOSFET(VDSS=40V, RDS(ON)=0.004OHM, ID=170aㄌ)
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170a?)
Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=170a)

File Size 100.05K  /  8 Page

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    IRF240SMD

SemeLAB
SEME-LAB[Seme LAB]
Air Cost Control
Part No. IRF240SMD
OCR Text 1 4 2 ) M ax. 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 3 ) 3 ...58 67 13.9 56 nC nC VDS = 0.5BVDSS VDD = 100V ID = 13.9a RG = 9.1W ns SOURCE - DRaIN DIO...
Description    N.CHaNNEL POWER MOSFET
N-Channel Power MOSFET(Vdss:200V,Id(cont):13.9a,Rds(on):0.18Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):13.9a,Rds(on):0.18Ω)) N沟道功率MOSFET(减振钢板基本:200伏,身份证(续)3.9a,的Rds(on):0.18Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本00伏,身份证(续)3.9a时,RDS(对):0.18Ω))

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    IRF2807L IRF2807S IRF2807STRL-111 IRF2807STRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF2807L IRF2807S IRF2807STRL-111 IRF2807STRR
OCR Text ... M3 srew Max. 82 58 280 230 1.5 20 43 23 5.9 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units a W W/C V a mJ V/ns C Thermal Resistance Parameter RJC RJa Junction-to-Case Junction-to-ambient (PCB mount)** Typ. -...
Description HEXFET Power MOSFET HEXFET功率MOSFET
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package

File Size 122.50K  /  10 Page

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    IRF2807

International Rectifier
Part No. IRF2807
OCR Text ... M3 srew Max. 82 58 280 230 1.5 20 43 23 5.9 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units a W W/C V a mJ V/ns C Thermal Resistance Parameter RJC RCS RJa Junction-to-Case Case-to-Sink, Flat, Greased Surface Junc...
Description Power MOSFET(Vdss=75V, Id=82a?)
Power MOSFET(Vdss=75V, Id=82a)

File Size 149.88K  /  8 Page

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    IRF3205 IRF3205PBF

IRF[International Rectifier]
Part No. IRF3205 IRF3205PBF
OCR Text ...3 srew Max. 110 80 390 200 1.3 20 62 20 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units a W W/C V a mJ V/ns C ...58 4) 1.15 (.04 5) M IN 1 2 3 LE a D a S S IG N M E N T S 1 - G aTE 2 - D R a IN 3 - SOURCE 4 ...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-220aB package
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110a?
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110a)
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110a?)
Power MOSFET(Vdss=55V/ Rds(on)=8.0mohm/ Id=110a)

File Size 91.40K  /  8 Page

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    IRF3315

International Rectifier
Part No. IRF3315
OCR Text ...0 12 13.6 2.5 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units a W W/C V mJ a mJ V/ns C Thermal Resistance Parameter RJ...58 4) 1.15 (.04 5) M IN 1 2 3 L E a D a S S IG NM E NT S 1 - GaTE 2 - D R a IN 3 - S O U RC E ...
Description Power MOSFET(Vdss=150V, Rds(on)=0.07ohm, Id=27a)

File Size 121.12K  /  8 Page

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