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IXYS[IXYS Corporation]
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| Part No. |
IXFM40N30 IXFH35N30 IXFH40N30 IXFM35N30
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| OCR Text |
...0.252 0.449 0.057 0.063 0.060 0.135 1.187 BSC 0.420 0.440 0.205 0.225 0.655 0.675 0.440 0.480 0.151 0.165 0.991 1.050
(c) 2000 IXYS All r...150V
IXFH 40N30 IXFM 40N30
Fig.8 Forward Bias Safe Operating Area
10s
100 Limited by RDS(o... |
| Description |
Discrete MOSFETs: HiPerFET Power MOSFETS
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| File Size |
166.95K /
4 Page |
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IXYS[IXYS Corporation]
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| Part No. |
IXZ2210N50L IXZ210N50L
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| OCR Text |
...121.73 -125.77 -129.43 -132.51 -135.38 -137.91 -140.21 -142.15 -144.08 -145.79 -147.24 -148.71 -150.00 -151.28 -152.29 -153.33 -154.29 -155....150V
FREQ
30.00 40.00 50.00 60.00 70.00 80.00 90.00 100.00 110.00 120.00 130.00 140.00 150.00 160.... |
| Description |
N-Channel Enhancement Mode Linear 175MHz RF MOSFET
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| File Size |
245.17K /
9 Page |
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VICOR[Vicor Corporation]
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| Part No. |
MEGA_MODULE
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| OCR Text |
...02 150 5% 3% 110% 125% 105% 20% 135% 140%
0.5% 0.05% 0.2% 0.01 0.02 60 2% 0.75% 50% 0.5 115% 105% 20%
VNOM VNOM VNOM % / C %/1K hours mV
LL to HL, 10% to FL LL to HL, NL to 10% Over rated temp.
50% 0.5
100 3% 1.5% 110% 135% 1... |
| Description |
25 to 600 Watts DC-DC Converters Single, Dual,Triple Output Chassis Mount
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| File Size |
150.56K /
4 Page |
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it Online |
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NTE[NTE Electronics]
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| Part No. |
NTE327
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| OCR Text |
.... Note 2. fT = |hfe| * ftest.
.135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane
.312 (7.93) Min
.040 (1.02)
Emitter .215 (5.45)
1.187 (30.16) .665 (16.9) .156 (3.96) Dia (2 Holes)
.430 (10.92) .188 (4.8) R Max
... |
| Description |
Silicon NPN Transistor Power Amp, Switch
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| File Size |
24.11K /
2 Page |
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NTE[NTE Electronics]
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| Part No. |
NTE387
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| OCR Text |
...%. Note 3. fT = (hfe) test
.135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane
.312 (7.93) Min Emitter .215 (5.45)
.040 (1.02) 1.187 (30.16) .665 (16.9) .156 (3.96) Dia (2 Holes)
.430 (10.92)
.188 (4.8) R Max
Ba... |
| Description |
Silicon NPN Transistor Power Amp, Switch
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| File Size |
22.46K /
2 Page |
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NTE[NTE Electronics]
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| Part No. |
NTE5406 NTE5400 NTE5401 NTE5402 NTE5403 NTE5404 NTE5405
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| OCR Text |
...dv/dt TC = +100C (critical)
.135 (3.45) Min
.210 (5.33) Max
Seating Plane
.500 (12.7) Min
.021 (.445) Dia Max
KG A
.100 (2.54) .050 (1.27)
.105 (2.67) Max .205 (5.2) Max
.165 (4.2) Max .105 (2.67) Max
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| Description |
0.8 A, 200 V, SCR, TO-92
Silicon Controlled Rectifier (SCR) 0.8 Amp Sensitive Gate
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| File Size |
18.02K /
2 Page |
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NTE[NTE Electronics]
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| Part No. |
NTE7018
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| OCR Text |
... V7-6 I7 V11-6 I11 9.5 - - - 12 135 8.6 6 13.2 - - 8 V mA V mA Symbol Min Typ Max Unit
Differential Input Resistance (Pin8 and Pin9) Diff...150V (0dB) Output Level for Zero Signal Input (Zero Point of Switched Demodulator) Output Signal Top... |
| Description |
Integrated Circuit Small-Signal Subsystem for Color TV
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| File Size |
44.77K /
6 Page |
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SEME-LAB[Seme LAB]
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| Part No. |
SF_2N6216 2N6270
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| OCR Text |
135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
38.61 (1.52) 39.12 (1.54)
0.97 (0.06...150V
3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50)
IC = 10A
All Semelab hermet... |
| Description |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
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| File Size |
11.49K /
1 Page |
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it Online |
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Price and Availability
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