|
|
![](images/bg04.gif) |
![EL8171IS-T13 EL8171IS-T7 EL8171ISZ EL8171ISZ-T13 EL8171ISZ-T7 EL8172IS EL8172IS-T13 EL8172IS-T7 EL8172ISZ-T13 EL8172ISZ-](Maker_logo/intersil_corporation.GIF)
Intersil, Corp. INTERSIL[Intersil Corporation]
|
Part No. |
EL8171IS-T13 EL8171IS-T7 EL8171ISZ EL8171ISZ-T13 EL8171ISZ-T7 EL8172IS EL8172IS-T13 EL8172IS-T7 EL8172ISZ-T13 EL8172ISZ-T7 EL8172ISZ EL8171 EL8171IS
|
OCR Text |
...8172 (8 LD SO) TOP VIEW
ENABLE 1 IN- 2 IN+ 3 VS- 4
+ + -
Applications
* Battery- or solar-powered systems * Strain gauges * Current mo...3kV Output Short-Circuit Duration . . . . . . . . . . . . . . . . . . . . . . .Indefinite Ambient Op... |
Description |
microPower, Single-Supply, CMOS Instrumentation Amplifier INSTRUMENTATION AMPLIFIER, 1000 uV OFFSET-MAX, 450 MHz BAND WIDTH, PDSO8 microPower, Single-Supply, CMOS Instrumentation Amplifier INSTRUMENTATION AMPLIFIER, 300 uV OFFSET-MAX, 172 MHz BAND WIDTH, PDSO8 Micropower, Single Supply, Rail-to-Rail Input-Output Instrumentation Amplifiers
|
File Size |
819.78K /
11 Page |
View
it Online |
Download Datasheet
|
|
|
![](images/bg04.gif) |
http:// MICROSEMI[Microsemi Corporation]
|
Part No. |
MM118-06L MM118-06F MM118-06 MM018-06L MM118-XX MM118-12
|
OCR Text |
... Breakdown Voltage @ Tj 25 RGS= 1 C, M Gate-to-Emitter Voltage continuous transient Continuous Collector Current Tj = 25 C Tj= 90 C Peak Collector Current, pulsewidth limited by Tj max Power Dissipation Thermal resistance, junction to base ... |
Description |
3 PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRIDGE 3 Phase IGBT Module
|
File Size |
116.34K /
3 Page |
View
it Online |
Download Datasheet
|
|
|
![](images/bg04.gif) |
http:// INFINEON[Infineon Technologies AG]
|
Part No. |
PTF211802A PTF211802E PTF211802
|
OCR Text |
...ection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 180 W (CW) outpu...3KV C2 .01F R1 1.2KV R3 2KV C3 .01 F Q1 BCP56 R4 10V R6 1KV
l13
R5 24KV R7 3KV C4 0.1 F C5 8.2pF... |
Description |
LDMOS RF Power Field Effect Transistor 180 W 2110-2170 MHz LDMOS RF POWER FIELD EFFECT TRANSISTOR 180 W, 2110-2170 MHZ LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz
|
File Size |
165.14K /
8 Page |
View
it Online |
Download Datasheet
|
|
|
![](images/bg04.gif) |
Electronic Theatre Controls, Inc. Broadcom
|
Part No. |
BCM5488
|
OCR Text |
... SerDes MAC interface options * 1-Gbps lineside SerDes with RGMII MAC interface option
SUMMARY OF BENEFITS * Low-power, octal-port integr...3kV of CESD.
Broadcom(R), the pulse logo, QuadSquadTM, Connecting everything(R), and the Connecti... |
Description |
OCTAL-PORT 10/100/1000BASE-T GIGABIT ETHERNET TRANSCEIVER Octal Port 10/100/1000Base-T Gigabit Ethernet Transceiver
|
File Size |
131.22K /
2 Page |
View
it Online |
Download Datasheet
|
|
![](images/findchips_sm.gif)
Price and Availability
|