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S2001 1N8151 VS9MTRF ACS8946 M38516 C3500 SXX18 COM0A0
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  193.0 Datasheet PDF File

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Part No. TA0175A
OCR Text ... 1960 - insertion loss within 1930 ~1990 mhz il (db) - 2.35 4 a mplitude ripple (p-p) within 1930 ~ 1990 mhz (db) - 1.4 2.4 a ttenuation (reference level from 0 db) d.c. ~ 1850 mhz ...
Description SAW Filter 1960MHz SMD 3.0 mm SQ

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    Motorola
Part No. MRF5S19090LR3 MRF5S19090LSR3 MRF5S19090LR MRF5S19090L
OCR Text ...= 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz) Third Order Inter...
Description 1990 MHz, 18 W Avg., 2 x N–CDMA, 28 V Lateral N–Channel RF Power MOSFET

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    Freescale (Motorola)
Part No. MRF5S19100L MRF5S19100LR3 MRF5S19100LSR3
OCR Text ...2 w avg., i dq = 1000 ma, f1 = 1930 mhz, f2 = 1932.5 mhz and f1 = 1987.5 mhz, f2 =1990 mhz) g ps 12.5 13.9 ? db drain efficiency (v dd = 28 vdc, p out = 22 w avg., i dq = 1000 ma, f1 = 1930 mhz, f2 = 1932.5 mhz and f1 = 1987.5 mhz, f2...
Description MRF5S19100LR3, MRF5S19100LSR3 1990 MHz, 22 W Avg., 2 x N-CDMA, 28 V Lateral N-Channel RF Power MOSFETs
1990 MHz, 22 W Avg., 2 x N–CDMA, 28 V Lateral N–Channel RF Power MOSFET

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    Freescale (Motorola)
Part No. MRF5S19090L MRF5S19090LR3 MRF5S19090LSR3
OCR Text ...18 w avg., i dq = 850 ma, f1 = 1930 mhz, f2 = 1932.5 mhz and f1 = 1987.5 mhz, f2 =1990 mhz) g ps 13.5 14.5 ? db drain efficiency (v dd = 28 vdc, p out = 18 w avg., i dq = 850 ma, f1 = 1930 mhz, f2 = 1932.5 mhz and f1 = 1987.5 mhz, f2 ...
Description MRF5S19090L, MRF5S19090LR3, MRF5S19090LSR3 1990 MHz, 18 W Avg., 2 x N-CDMA, 28 V Lateral N-Channel RF Power MOSFETs
1990 MHz, 18 W Avg., 2 x N–CDMA, 28 V Lateral N–Channel RF Power MOSFET

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    MLO81100-01960

MA-Com
MACOM[Tyco Electronics]
Part No. MLO81100-01960
OCR Text ...ltage Controlled Oscillator PCS 1930 - 1990 MHz Features * * * * * Miniature Size Surface Mount Package Electrically Shielded Low Phase Noise Highly Linear Tuning LSM1 Package Description The MLO81100-01960 is a fundamental single ...
Description 1930-1990 MHz, Surface mount voltage controlled oscillator PCS
Surface Mount Voltage Controlled Oscillator PCS 1930 - 1990 MHz

File Size 101.16K  /  2 Page

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    TQ5622

TRIQUINT[TriQuint Semiconductor]
Part No. TQ5622
OCR Text ...e Input 3rd Order Intercept Min 1930 17.5 2.8 -9 12.0 Typ Max 1990 Units MHz dB dB dBm mA Applications PCS, IS-136 based TDMA Mobile Phones DC supply Current Note 1: Test Conditions: Vdd=2.8VDC, Tc=25C, Filter IL=2.5dB, RF=1960MH...
Description 3V PCS Receiver IC With Power- Down

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    BLF4G20LS-110B

Philips Semiconductors
NXP Semiconductors N.V.
Part No. BLF4G20LS-110B
OCR Text ...able 1: Typical performance f = 1930 MHz to 1990 MHz; Tcase = 25 C; IDq = 650 mA; unless otherwise specified; in a class-AB production test circuit; typical values Mode of operation CW GSM EDGE [1] [2] VDS (V) 28 28 PL (W) 100 48 (AV...
Description From old datasheet system
UHF power LDMOS transistor 110 W LDMOS power transistor for base station applications at frequencies

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    MRF282 MRF282S MRF282Z

MOTOROLA[Motorola, Inc]
Part No. MRF282 MRF282S MRF282Z
OCR Text ...= 10 W (PEP), IDQ = 75 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) Drain Efficiency (VDD = 26 Vdc, Pout = 10 W (PEP), IDQ = 75 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) Intermodulation Distortion (VDD = 26 Vdc, Pout = 10 W (PEP), IDQ = 75 mA, f1 = 19...
Description LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

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    飞思卡尔半导体(中国)有限公司
Part No. MRF18030BLR3
OCR Text ...applications. specified for gsm 1930 - 1990 mhz. ? typical gsm performance: power gain - 14 db (typ) @ 30 watts efficiency - 50% (typ) @ 30 watts ? capable of handling 5:1 vswr, @ 26 vdc, 30 watts cw output power features ? internally m...
Description RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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