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  1a 2a Datasheet PDF File

For 1a 2a Found Datasheets File :: 21232    Search Time::1.797ms    
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    2SC4059

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SC4059
OCR Text ...A 7.5A 15A 20A 2.5 3 IC = 1a 2.5 2 2 1.5 20A 15A 2a 4A 7.5A 1.5 Collector-Emitter Voltage VCE [V] IC = 1a 0.5 0.5 Tc = 25C 0.1 1 0 10 12 0 0.01 Base Current IB [A] Base-Emitter Voltage VBE [V] 1 ...
Description Switching Power Transistor(15A NPN)

File Size 523.75K  /  12 Page

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    2SC4559

PANASONIC[Panasonic Semiconductor]
Part No. 2SC4559
OCR Text ...= 10mA, IB = 0 VCE = 5V, IC = 0.1a VCE = 5V, IC = 3A IC = 3A, IB = 0.6A IC = 3A, IB = 0.6A VCE = 10V, IC = 0.5A, f = 1MHz IC = 3A, IB1 = 0.6A, IB2 = -1.2a, VCC = 150V 5.5 1.0 3.0 0.3 400 10 8 1.0 1.5 V V MHz s s s min typ max 100 100 Unit A...
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

File Size 58.09K  /  3 Page

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    2SD2045

SANKEN[Sanken electric]
Part No. 2SD2045
OCR Text ...=3mA IC=3A, IB=3mA VCE=12V, IE=-1a VCB=10V, f=1MHz 2SD2045 10max 10max 120min 2000min 1.5max 2.0max 50typ 70typ V V 16.2 Equivalent circ...2a 1 C ( 1 0 0 1 2 3 4 5 6 0 0.1 0.5 1 5 10 50 ...
Description Silicon NPN Triple Diffused Planar Transistor(Driver for Solenoid/ Motor and General Purpose)
Silicon NPN Triple Diffused Planar Transistor(Driver for Solenoid, Motor and General Purpose)

File Size 25.04K  /  1 Page

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    2SD2137A 2SB1417 2SB1417A 2SD2137

Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
Part No. 2SD2137A 2SB1417 2SB1417A 2SD2137
OCR Text ... -30mA, IB = 0 VCE = -4V, IC = -1a VCE = -4V, IC = -3A VCE = -4V, IC = -3A IC = -3A, IB = - 0.375A VCE = -5V, IC = - 0.2a, f = 10MHz IC = -1a, IB1 = - 0.1a, IB2 = 0.1a, VCC = -50V 30 0.3 1.0 0.2 -60 -80 70 10 -1.8 -1.2 V V MHz s s s 250 min...
Description Silicon PNP epitaxial planar type(For power amplification) 3 A, 80 V, PNP, Si, POWER TRANSISTOR

File Size 53.34K  /  3 Page

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    2SD2137 2SD2137A

PANASONIC[Panasonic Semiconductor]
Part No. 2SD2137 2SD2137A
OCR Text ...C = 30mA, IB = 0 VCE = 4V, IC = 1a VCE = 4V, IC = 3A VCE = 4V, IC = 3A IC = 3A, IB = 0.375A VCE = 5V, IC = 0.2a, f = 10MHz IC = 1a, IB1 = 0.1a, IB2 = - 0.1a, VCC = 50V 30 0.3 2.5 0.2 60 80 70 10 1.8 1.2 V V MHz s s s 250 min typ max 100 100...
Description Silicon NPN triple diffusion planar type(For power amplification)

File Size 52.93K  /  3 Page

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    2SD2138A 2SB1418 2SB1418A 2SD2138

PANASONIC[Panasonic Semiconductor]
Part No. 2SD2138A 2SB1418 2SB1418A 2SD2138
OCR Text ... -30mA, IB = 0 VCE = -4V, IC = -1a VCE = -4V, IC = -2a VCE = -4V, IC = -2a IC = -2a, IB = -8mA VCE = -10V, IC = - 0.5A, f = 1MHz IC = -2a, IB1 = -8mA, IB2 = 8mA, VCC = -50V 20 0.2 2 -60 -80 1000 2000 10000 -2.8 -2.5 V V MHz s s min typ max ...
Description Silicon PNP epitaxial planar type Darlington(For power amplification)

File Size 59.81K  /  2 Page

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    2SD2138 2SD2138A

PANASONIC[Panasonic Semiconductor]
Part No. 2SD2138 2SD2138A
OCR Text ...C = 30mA, IB = 0 VCE = 4V, IC = 1a VCE = 4V, IC = 2a VCE = 4V, IC = 2a IC = 2a, IB = 8mA VCE = 10V, IC = 0.5A, f = 1MHz IC = 2a, IB1 = 8mA, IB2 = -8mA, VCC = 50V min typ max 100 100 100 100 100 Unit A A A V 60 80 1000 2000 10...
Description Silicon NPN triple diffusion planar type Darlington(For power amplification)

File Size 59.65K  /  2 Page

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    2SJ459

Sanyo Electric Co., Ltd.
SANYO[Sanyo Semicon Device]
Part No. 2SJ459
OCR Text ...0V = --1 VGS V --20 2.0 --1a 1.5 0 --2 --4 --6 --8 --10 --12 --14 IT03688 --25 0 25 50 75 100 125 150 Gate-to-Source Voltage, VGS -- V --10 yfs -- ID Case Temperature, Tc -- C --5.0 --4.5 IT036...
Description    Ultrahigh-Speed Switching Applications
Ultrahigh-Speed Switching Applications 超高速开关应
P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

File Size 32.07K  /  4 Page

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    2SJ484

HITACHI[Hitachi Semiconductor]
Part No. 2SJ484
OCR Text ...18 typ. (at V GS = -10V, ID = -1a) * Low drive current * High speed switching * 4V gate drive devices. Outline UPAK 2 3 1 4 D G...2a, VGS = 0 I F = -2a, VGS = 0 diF/ dt = 50A/s Test Conditions I D = -10mA, VGS = 0 I G = 100A, VDS ...
Description Silicon P-Channel MOS FET High Speed Power Switching

File Size 42.55K  /  9 Page

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    2SJ517

HITACHI[Hitachi Semiconductor]
Part No. 2SJ517
OCR Text ... 0.18 typ. (at V GS =-4V, ID =-1a) * Low drive current * High speed switching * 2.5V gate drive devices. Outline UPAK 3 D 2 1...2a, VGS = 0 I F = -2a, VGS = 0 diF/ dt =50A/s Test Conditions I D = -10mA, VGS = 0 I G = 100A, VDS =...
Description Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching

File Size 42.79K  /  8 Page

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For 1a 2a Found Datasheets File :: 21232    Search Time::1.797ms    
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