TMOS POWER FET 14 AMPERES 1000 volts RDS(on) = 0.80 OHM TMOS14安培,功率场效应晶体000伏特的RDS(on)\u003d 0.80欧姆 TMOS POWER FET 14 AMPERES 1000 volts RDS(on) = 0.80 OHM 14 A, 1000 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA From old datasheet system TMOS E-FET Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate
HIGH CURRENT 15/25/35/amps. SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIERS 18-A, 5-V Input, Non-Isolated Wide-Adjust SIP Module 12-SIP MODULE -40 to 85 HIGH CURRENT SILICON BRIDGE RECTIFIER(VOLTAGE - 50 to 1000 volts CURRENT - 25 Amperes) HIGH CURRENT SILICON BRIDGE RECTIFIER(VOLTAGE - 50 to 800 volts CURRENT - 35 Amperes)