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  25-32a Datasheet PDF File

For 25-32a Found Datasheets File :: 999    Search Time::2.015ms    
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    IRL1004

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IRF[International Rectifier]
Part No. IRL1004
OCR Text ...- --- S VDS = 25V, ID = 78A --- 25 VDS = 40V, VGS = 0V A --- 250 VDS = 32V, VGS = 0V, TJ = 150C --- 100 VGS = 16V nA --- -100 VGS = -16V ---...32A 55A 78A VDD IAS tp 0.01 1200 900 Fig 12a. Unclamped Inductive Test Circuit 60...
Description HEXFET? Power MOSFET
HEXFET Power MOSFET

File Size 85.53K  /  8 Page

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    Q67040-A4407-A2 BUP213

SIEMENS AG
Infineon Technologies AG
SIEMENS[Siemens Semiconductor Group]
Part No. Q67040-A4407-A2 BUP213
OCR Text ... current 20 A 32 20 TC = 25 C TC = 90 C Pulsed collector current, tp = 1 ms ICpuls 64 40 TC = 25 C TC = 90 C Avalanche energy, single pulse EAS 22 mJ IC = 15 A, VCC = 50 V, RGE = 25 L = 200 H, Tj = 25 C Power dis...
Description IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated)
From old datasheet system

File Size 110.47K  /  8 Page

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    IXYS[IXYS Corporation]
Part No. IXFT32N50 IXFH32N50 IXFH30N50 IXFT30N50
OCR Text ...0 240 35 42 110 26 227 29 110 0.25 28 5700 750 310 45 50 140 35 300 40 145 0.35 (TO-247 Case Style) S pF pF pF ns ns ns ns nC nC nC K/W K/W ...32A 2.0 1.6 1.2 0.8 25 ID = 16A Tj=250 C 1.2 0.8 0 10 20 30 40 50 60 ...
Description N-Channel Enhancement Mode HiPerFET Power MOSFET(??ぇ婕???荤┛?靛?00V,瀵奸??甸?.16惟??娌??澧?己??iPerFET???MOSFET)
Discrete MOSFETs: HiPerFET Power MOSFETS

File Size 109.42K  /  4 Page

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    RA08H1317 RA08H1317M RA08H1317M-01 RA08H1317M-E01

Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric Sem...
Part No. RA08H1317 RA08H1317M RA08H1317M-01 RA08H1317M-E01
OCR Text ... SUPPLY FORM Antistatic tray, 25 modules/tray RA08H1317M MITSUBISHI ELECTRIC 1/9 23 Dec 2002 ELECTROSTATIC SENSITIVE DEVICE O...32A - 8.0W + 1.5W) x 2.4C/W = Tcase + 24.0 C For long-term reliability, it is best to keep the modul...
Description TV 2C 2#16 SKT RECP 135 - 175MHz瓦特12.5V便携移动通信
Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVP00; Number of Contacts:2; Connector Shell Size:11; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight
135-175MHz 8W 12.5V PORTABLE/MOBILE RADIO

File Size 49.96K  /  9 Page

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    STMicro
Part No. TIP31C TIP31A 4137
OCR Text ...nt Total Dissipation at T case 25 o C T amb 25 o C Storage Temperature Max. Operating Junction Temperature Value TIP31A TIP32A 60 60 TIP32...32A VCE = 30 V for TIP31C/32B/32C VCE = 60 V for TIP31A/32A for TIP/32B for TIP31C/32C VCE = 60 V VC...
Description COMPLEMENTARY SILICON POWER TRANSISTORS
From old datasheet system

File Size 74.32K  /  5 Page

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    IRFU3411

International Rectifier
Part No. IRFU3411
OCR Text ...- S VDS = 50V, ID = 16A --- --- 25 VDS = 100V, VGS = 0V A --- --- 250 VDS = 80V, VGS = 0V, TJ = 150C --- --- 100 VGS = 20V nA --- --- -100 VGS = -20V --- 48 71 ID = 16A --- 9.0 14 nC VDS = 80V --- 14 21 VGS = 10V, See Fig. 6 and 13 --- 11 -...
Description HEXFET? Power MOSFET

File Size 110.74K  /  10 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. ISL9N312AS ISL9N312AP3 ISL9N312AS3ST
OCR Text ...ller" Charge (VGS = 4.5V) 15 60 25 30 115 83 ns ns ns ns ns ns VDS = 15V, VGS = 0V, f = 1MHz VGS = 0V to 10V VGS = 0V to 5V V = 15V DD VGS = 0V to 1V ID = 32A Ig = 1.0mA 1450 300 120 25 13 1.5 4.3 4.5 38 20 2.3 pF pF pF nC nC nC nC nC Sw...
Description N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs

File Size 138.82K  /  11 Page

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    hitachi
Part No. HN27C4001GSERIES C4001G
OCR Text ...(Top view) 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VCC A18 A17 A14 A13 A8 A9 A11 OE A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 Pin Descripti...32A) 41.91 43.18 Max 32 17.00 14.66 15.51 Max 7.00 17 Unit: mm 1 2.54 Max 1.32 16 0.38...
Description From old datasheet system

File Size 95.58K  /  21 Page

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    IRG4PH50KD IRG4PH50KD-E

IRF[International Rectifier]
Part No. IRG4PH50KD IRG4PH50KD-E
OCR Text ...- -- -- -- -- -- -- -- Typ. 180 25 70 87 100 140 200 3.83 1.90 5.73 -- 67 72 310 390 8.36 13 2800 140 53 90 164 5.8 8.3 260 680 120 76 Max. ...32A I F = 16 A I F = 8 .0A 100 10 0 100 d i f /dt - (A / s) 1000 0 100 di f /dt - ...
Description 45 A, 1200 V, N-CHANNEL IGBT, TO-247AD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.77V, @Vge=15V, Ic=24A)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V Vce(on)typ.=2.77V @Vge=15V Ic=24A)
1200V UltraFast 4-20 kHz Copack IGBT in a TO-247AC package

File Size 221.27K  /  10 Page

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    SANYO[Sanyo Semicon Device]
Part No. LC875132A LC875148A LC875164A
OCR Text ...91400 RM (IM) HK / SY No.6715-1/25 LC875164A/48A/32A (2) Bus Cycle Time - 100ns (10MHz) Note: The bus cycle time indicates ROM read time. (3) Minimum Instruction Cycle Time : 300ns (10MHz) (4) Ports - Input/output ports Each bit data ...
Description 8-Bit Single Chip Microcontroller with 64/48/32K-Byte EPROM and 1024-Byte RAM On Chip
CMOS IC
8-BIT SINGLE CHIP MICROCONTROLLER WITH 64/48/32K-BYTE ROM AND 1024-BYTE RAM ON CHIP

File Size 784.59K  /  25 Page

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For 25-32a Found Datasheets File :: 999    Search Time::2.015ms    
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