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  256m-s Datasheet PDF File

For 256m-s Found Datasheets File :: 747    Search Time::2.281ms    
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    M2V56S20ATP-8 M2V56S20TP M2V56S30ATP-8 M2V56S40ATP-8 M2V56S20ATP-6 M2V56S20ATP-7 M2V56S30ATP-7 M2V56S40ATP-6 M2V56S40ATP

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. M2V56S20ATP-8 M2V56S20TP M2V56S30ATP-8 M2V56S40ATP-8 M2V56S20ATP-6 M2V56S20ATP-7 M2V56S30ATP-7 M2V56S40ATP-6 M2V56S40ATP-7
OCR Text 256M Synchronous DRAM Some of contents are subject to change without notice. DESCRIPTION M2V56S20TP is a 4-bank x 16777216-word x 4-b...S 4 0 This rule is applied to only Synchronous DRAM family. TP - 8 Speed Grade 6: 133MHz@CL3,...
Description 256M Synchronous DRAM

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    M2V56S20ATP M2V56S20ATP-5 M2V56S20ATP-6 M2V56S20ATP-7 M2V56S30ATP-5 M2V56S30ATP-6 M2V56S30ATP-7 M2V56S40ATP-7 M2V56S40AT

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. M2V56S20ATP M2V56S20ATP-5 M2V56S20ATP-6 M2V56S20ATP-7 M2V56S30ATP-5 M2V56S30ATP-6 M2V56S30ATP-7 M2V56S40ATP-7 M2V56S40ATP-5 M2V56S40ATP-6
OCR Text 256M Synchronous DRAM Some of contents are subject to change without notice. DESCRIPTION M2V56S20ATP is a 4-bank x 16777216-word x 4-...S This rule is applied to only Synchronous DRAM family. 4 0 A TP - 5 Speed Grade 5: 166MHz@CL...
Description 256M Synchronous DRAM

File Size 676.59K  /  49 Page

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    KBE00S003M-D411 KBE00S003M

SAMSUNG[Samsung semiconductor]
Part No. KBE00S003M-D411 KBE00S003M
OCR Text ... 1G Bit (128Mx8) Nand Flash*2 / 256M Bit (8Mx8x4Banks) Mobile SDRAM*2 Revision No. History 0.0 Initial issue. - 2Gb NAND DDP M-Die_Ver 0.0...s web site. http://samsungelectronics.com/semiconductors/products/products_index.html The attached d...
Description 1Gb NAND*2 256Mb Mobile SDRAM*2
From old datasheet system
1Gb NANDx2 256Mb Mobile SDRAMx2

File Size 1,802.34K  /  86 Page

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    TMPR4927ATB-200

Toshiba Semiconductor
Part No. TMPR4927ATB-200
OCR Text ...16-bit data bus, and 1M byte to 256M bytes for devices with 8-bit data bus n DMA Controller ( DMAC ) The TX4927 contains a 4-channel DMA ...s built-in peripherals and external devices and issues interrupt requests to the TX49/H2 core. It ha...
Description TX49 64-Bit TX SystemRISC Series Microprocessors
TOSHIBA RISC PROCESSOR

File Size 178.01K  /  37 Page

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    EDS2732CABH EDS2732CABH-75L-E EDS2732CABH-1A-E EDS2732CABH-1AL-E EDS2732CABH-75-E

ELPIDA[Elpida Memory]
Part No. EDS2732CABH EDS2732CABH-75L-E EDS2732CABH-1A-E EDS2732CABH-1AL-E EDS2732CABH-75-E
OCR Text 256M bits SDRAM EDS2732CABH (8M words x 32 bits) Description The EDS2732CA is a 256M bits SDRAM organized as 2,097,152 words x 32 bits x ...S 27 32 C A BH - 75 L - E Elpida Memory Type D: Monolithic Device Environment Code E: Lead Free...
Description 256M bits SDRAM (8M words x 32 bits)

File Size 563.32K  /  48 Page

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    K9E2G08B0M K9E2G08B0M-F K9E2G08B0M-FCB0 K9E2G08B0M-FIB0 K9E2G08B0M-P K9E2G08B0M-PCB0 K9E2G08B0M-PIB0 K9E2G08B0M-V K9E2G0

Samsung semiconductor
Part No. K9E2G08B0M K9E2G08B0M-F K9E2G08B0M-FCB0 K9E2G08B0M-FIB0 K9E2G08B0M-P K9E2G08B0M-PCB0 K9E2G08B0M-PIB0 K9E2G08B0M-V K9E2G08B0M-VCB0 K9E2G08B0M-VIB0 K9E2G08B0M-Y K9E2G08B0M-YCB0 K9E2G08B0M-YIB0
OCR Text 256M x 8 Bits NAND Flash Memory Advanced FLASH MEMORY Revision History Revision No. History 0.0 0.1 Draft Date Nov. 8th 2004 Nov...s Flash web site. http://www.samsung.com/Products/Semiconductor/ The attached datasheets are prepare...
Description 256M x 8 Bits NAND Flash Memory

File Size 886.25K  /  38 Page

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    K9E2G08U0M K9E2G08U0M-F K9E2G08U0M-P K9E2G08U0M-V K9E2G08U0M-Y

Samsung Electronic
Samsung semiconductor
Part No. K9E2G08U0M K9E2G08U0M-F K9E2G08U0M-P K9E2G08U0M-V K9E2G08U0M-Y
OCR Text 256M x 8 Bits NAND Flash Memory Revision History Revision No. History 0.0 0.1 0.2 Draft Date June. 8th 2004 Oct. 25th 2004 May 6th ...s Flash web site. http://www.samsung.com/Products/Semiconductor/ The attached datasheets are prepare...
Description 256M x 8 Bits NAND Flash Memory

File Size 878.11K  /  38 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
Part No. MR18R16228DF0 MR16R1622 MR18R1622DF0 MR16R16224DF0 MR18R16224DF0 MR18R1622GDF0 MR16R1622DF0 MR16R16228DF0 MR16R162GDF0 MR18R162GDF0
OCR Text ... 16/18 -CM9 -CM8 -CK8 -CT9 -CN9 256M x 16/18 -CM9 -CM8 -CK8 MR16/18R1622DF0-CT9 MR16/18R1622DF0-CN9 MR16/18R1622DF0-CM9 MR16/18R1622DF0-C...s, to add I/O power for 50% 1's for a X16 need to add 257mA or 290mA for X18 ECC module for the foll...
Description (MR1xR1622(4/8/G)DF0) Key Timing Parameters

File Size 440.00K  /  16 Page

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    MR18R1628EG0-CM8 MR16R1628EG0-CK8 MR16R162GEG0-CK8 MR16R16248EG0 MR16R1624EG0-CK8 MR16R1624EG0-CM8 MR16R1624EG0-CT9 MR16

Samsung Electronic
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. MR18R1628EG0-CM8 MR16R1628EG0-CK8 MR16R162GEG0-CK8 MR16R16248EG0 MR16R1624EG0-CK8 MR16R1624EG0-CM8 MR16R1624EG0-CT9 MR16R1624GEG0 MR16R162GEG0-CM8 MR16R162GEG0-CT9 MR18R1624EG0-CK8 MR18R1624EG0-CM8 MR18R1624EG0-CT9 MR18R1624GEG0 MR18R1628EG0-CK8 MR18R1628EG0-CT9 MR18R162GEG0-CK8 MR18R162GEG0-CM8 MR18R162GEG0-CT9 MR18R16248EG0 MR16R1628EG0-CM8 MR16R1628EG0-CT9
OCR Text ...CT9 128M x 16/18 -CM8 -CK8 -CT9 256M x 16/18 -CM8 -CK8 MR16/18R1624EG0-CT9 MR16/18R1624EG0-CM8 MR16/18R1624EG0-CK8 MR16/18R1628EG0-CT9 MR...s, to add I/O power for 50% 1's for a X16 need to add 257mA or 290mA for X18 ECC module for the foll...
Description From old datasheet system
CONN HEADER 20POS DL PCB 30GOLD
Key Timing Parameters 关键的定时参
CONN HEADER 18POS DL PCB 30GOLD 关键的定时参

File Size 439.82K  /  16 Page

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    MR18R162GAF0 MR16R162GAF0 MR18R1624AF0 MR18R1622AF0 MR16R1624AF0 MR16R1628AF0 MR16R1622AF0 MR16R1624AF0-CK8 MR16R1624AF0

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Part No. MR18R162GAF0 MR16R162GAF0 MR18R1624AF0 MR18R1622AF0 MR16R1624AF0 MR16R1628AF0 MR16R1622AF0 MR16R1624AF0-CK8 MR16R1624AF0-CM8 MR18R1628AF0-CK8 MR18R1628AF0-CM8 MR18R1628AF1-CN9 MR18R1628AF1-CT9 MR18R1622AF0-CK8 MR18R1622AF0-CM8 MR18R162GAF0-CK8 MR18R162GAF0-CM8 MR18R162GAF0-CN9 MR18R162GAF0-CT9 MR18R1624AF0-CK8 MR18R1624AF0-CM8 MR18R1624AF1-CN9 MR18R1624AF1-CT9 MR16R1622AF0-CK8 MR16R1622AF0-CM8 MR16R162GAF0-CK8 MR16R162GAF0-CM8 MR16R1628AF0-CK8 MR16R1628AF0-CM8
OCR Text ...CN9 -CM8 -CK8 -CT9 Features 256M x 16/18 -CN9 -CM8 -CK8 High speed up to 1066 MHz RDRAM storage 184 edge connector pads with 1mm...s, to add I/O power for 50% 1's for a X16 need to add 257mA or 290mA for X18 ECC module for the foll...
Description 64M X 16 RAMBUS MODULE, DMA184
TVS 500W 6.5V BIDIRECT DO-15 6Mx16显示)2/8/16)件RIMM的模块,基于256Mb阿芯片,32秒银行,16K/32ms参考,.5V
16Mx16显示)2/8/16)件RIMM的模块,基于256Mb阿芯片,32秒银行,16K/32ms参考,.5V
(MR18R1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die
(MR1xR1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die
(16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V

File Size 417.13K  /  16 Page

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For 256m-s Found Datasheets File :: 747    Search Time::2.281ms    
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