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Samsung Electronic
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| Part No. |
K4S56163LC-RFR
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| OCR Text |
2.5V, VDDQ 1.8V & 2.5V)
K4S56163LC-RF(R)
CMOS SDRAM
16Mx16 Mobile DRAM
(TCSR & PASR option support)
Revision 0.4 December 2001
...7ns to 7.5ns in case of -15 part. * Change of tOH from 3ns to 3.5ns. * Change V IH min. from 1.44V t... |
| Description |
4M x 16Bit x 4 Banks Mobile SDRAM in 54CSP Data Sheet
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| File Size |
701.92K /
49 Page |
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Samsung Electronic
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| Part No. |
K4S28163LD-RFR
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| OCR Text |
2.5V, VDDQ 1.8V & 2.5V)
Preliminary
K4S28163LD-RG(S)
CMOS SDRAM
8Mx16 Mobile SDRAM
(PASR & TCSR, -25C ~ 85C Operation)
Revis...7ns to 7.5ns in case of -15 part. * Changed of tOH from 3ns to 2.5ns. * Changed V IH min. from 1.44 ... |
| Description |
2M x 16Bit x 4 Banks SDRAM in 54CSP Data Sheet
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| File Size |
97.04K /
12 Page |
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it Online |
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Nanya Technology, Corp.
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| Part No. |
M1Y1G64TU8HA0B-3C M1U1G64TU8HA0F-3C M1U1G64TU8HA0B-3C
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| OCR Text |
...ank) ? m1u51264tu88a0f ? 14/10/2 addressing (row/column/bank) ? m1u1g64tu8ha0f ? 7.8 s max. average periodic refresh interval ? serial pr...7ns @ cl = 4) ddr2-533 pc2-4200 green m1u51264tu88a0f-3c 84-ball m1u51264tu88a0b-3c 60-ball m1y... |
| Description |
128M X 64 DDR DRAM MODULE, 0.45 ns, DMA240 GREEN, DIMM-240
128M X 64 DDR DRAM MODULE, 0.45 ns, DMA240 DIMM-240
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| File Size |
174.23K /
20 Page |
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Samsung Semiconductor Co., Ltd.
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| Part No. |
K4D263238M-QC50 K4D263238M-QC500 K4D263238M-QC45 K4D263238M-QC600 K4D263238M-QC55 K4D263238M-QC450 K4D263238M-QC550
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| OCR Text |
...
128m ddr sdram k4d263238m - 2 - rev. 1.3 (aug. 2001) revision history revision 1.3 (august 2, 2001) ? removed k4d263238m-qc40 with v...7ns to 10ns. revision 1.2 (july 12, 2001) ? corrected cas latency of k4d263238m-qc45 from cl3... |
| Description |
DIODE ZENER DUAL COMMON-CATHODE 300mW 3Vz 5mA-Izt 0.0667 0.1uA-Ir SOT-23 3K/REEL 100万x 32Bit的4银行双数据速率同步RAM的双向数据选通和DLL
4M X 32 DDR DRAM, 0.7 ns, PQFP100 20 X 14 MM, 0.65 MM PITCH, TQFP-100
DIODE ZENER DUAL COMMON-CATHODE 300mW 39Vz 5mA-Izt 0.0513 0.1uA-Ir 29 SOT-23 3K/REEL 100万x 32Bit的4银行双数据速率同步RAM的双向数据选通和DLL
4M X 32 DDR DRAM, 0.75 ns, PQFP100 20 X 14 MM, 0.65 MM PITCH, TQFP-100
1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL 100万x 32Bit的4银行双数据速率同步RAM的双向数据选通和DLL
DIODE ZENER DUAL COMMON-CATHODE 300mW 3.3Vz 5mA-Izt 0.0606 0.1uA-Ir SOT-23 3K/REEL 100万x 32Bit的4银行双数据速率同步RAM的双向数据选通和DLL
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| File Size |
284.29K /
19 Page |
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it Online |
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Samsung Electronic
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| Part No. |
M366S0824DT0 M366S1623DT0
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| OCR Text |
...C1H/ TC1L # of rows in module : 2 rows # of banks in component : 4 banks Feature : 1,375mil height & double sided component Refresh : 4K/64m...7ns 20ns 20ns 20ns 50ns A0h 60h 00h 00h 14h 10h 14h 30h A0h 60h 00h 00h 14h 14h 14h 32h 08h 20h 10h ... |
| Description |
8M x 64 SDRAM DIMM based on 4M x 16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Serial Presence Detect
16M x 64 SDRAM DIMM based on 8M x 8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Serial Presence Detect
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| File Size |
88.88K /
11 Page |
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it Online |
Download Datasheet |
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