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  300s Datasheet PDF File

For 300s Found Datasheets File :: 11192    Search Time::1.281ms    
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    NAND256W4A NAND256W3A NAND256R4A NAND256R3A NAND512W3A M7020 NAND512W3A3DN6T NAND01GW3A2CZA1E NAND512R3A2DN1F NAND512R3A

STMicroelectronics
NUMONYX
Part No. NAND256W4A NAND256W3A NAND256R4A NAND256R3A NAND512W3A M7020 NAND512W3A3DN6T NAND01GW3A2CZA1E NAND512R3A2DN1F NAND512R3A2DN1T NAND512W4A2DN6T
OCR Text ... 60ns 50ns Page Program Typical 300s 200s 300s 200s 300s 200s 300s 200s 300s 200s 300s 200s 300s 200s 300s 200s 2ms 2ms TSOP48 VFBGA63 (8.5x15x1 mm) 2ms TSOP48 VFBGA63 (9x11x1 mm) 2ms TSOP48 VFBGA63 (9x11x1 mm) Block Erase Typical Package ...
Description 32M X 16 FLASH 3V PROM, 12000 ns, PDSO48
64M X 8 FLASH 1.8V PROM, 15000 ns, PDSO48
128 MBIT, 256 MBIT, 512 MBIT, 1 GBIT (X8/X16) 1.8V, 3V SUPPLY FLASH MEMORIES
64M X 8 FLASH 3V PROM, 12000 ns, PDSO48
128M X 8 FLASH 3V PROM, 12000 ns, PBGA63

File Size 62.74K  /  5 Page

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    HIP0061 HIP0061AS1 HIP0061AS2

INTERSIL[Intersil Corporation]
Part No. HIP0061 HIP0061AS1 HIP0061AS2
OCR Text ...ES: 5. Pulse test: Pulse width 300s, duty cycle 2%. 6. Independent of operating temperature. SYMBOL VSD trr TEST CONDITIONS ISD = 2A, VGS = 0V ISD = 2A, dISD/dt = 100A/s MIN TYP 0.9 50 MAX 1.1 UNITS V ns Typical Performance Curves 1...
Description    60V, 3.5A, 3-Transistor Common Source ESD Protected Power MOSFET Array
60V/ 3.5A/ 3-Transistor Common Source ESD Protected Power MOSFET Array
60V 3.5A 3-Transistor Common Source ESD Protected Power MOSFET Array

File Size 59.50K  /  9 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FDFC2P100
OCR Text ...5V VGS = -2.0V PULSE DURATION = 300s DUTY CYCLE = 2.0%MAX -ID, DRAIN CURRENT (A) 5 4 3 2 1 0 0.0 VGS = -3.5V VGS = -3.0V VGS = -2.5V VGS = -2.0V PULSE DURATION = 300s DUTY CYCLE = 2.0%MAX 0.5 1.0 1.5 2.0 2.5 5...
Description Integrated P-Channel PowerTrench MOSFET and Schottky Diode -20V, -3A, 150mohm

File Size 289.26K  /  6 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FDFS6N754
OCR Text ...er 2: Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%. 3 FDFS6N754 Rev. A www.fairchildsemi.com FDFS6N754 Integrated N-Channel PowerTrench(R) MOSFET and Schottky Diode Typical Characteristics TJ 20 ID, DRAIN CURRENT (A) VGS...
Description Integrated N-Channel PowerTrench MOSFET and Schottky Diode 30V, 4A, 56mOHM

File Size 323.42K  /  7 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FDM3300NZ_07 FDM3300NZ
OCR Text ... 2: Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%. FDM3300NZ Rev.F 2 www.fairchildsemi.com FDM3300NZ Monolithic Common Drain N-Channel 2.5V Specified PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwi...
Description Monolithic Common Drain N-Channel 2.5V Specified PowerTrench㈢ MOSFET 20V, 10A, 23mヘ

File Size 188.85K  /  6 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FDM6296_07 FDM6296
OCR Text ... 2: Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%. FDM6296 Rev.E 2 www.fairchildsemi.com FDM6296 Single N-Channel Logic-Level PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted VGS = 10V VGS ...
Description Single N-Channel Logic-Level PowerTrench㈢ MOSFET 30V,11.5A, 10.5mヘ

File Size 182.83K  /  6 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FDMC5614P
OCR Text ... 2: Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%. FDMC5614P Rev.C 2 www.fairchildsemi.com FDMC5614P P-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted NORMALIZED DRAIN TO SOURCE ON...
Description P-Channel PowerTrench MOSFET

File Size 214.26K  /  7 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FDMS2572 FDMS257207
OCR Text ... 2: Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%. FDMS2572 Rev.C2 2 www.fairchildsemi.com FDMS2572 N-Channel UltraFET Trench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 35 ID, DRAIN CURRENT (A) ...
Description N-Channel UltraFET Trench? MOSFET 150V, 27A, 47m
N-Channel UltraFET Trench㈢ MOSFET 150V, 27A, 47mз

File Size 499.37K  /  7 Page

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    Diodes, Inc.
Part No. BAS70-06-7 BAS70-05-7
OCR Text ... voltage v f 410 1000 mv t p <300s, i f = 1.0ma t p <300s, i f = 15ma reverse current (note 2) i r 100 na t p < 300s, v r = 50v total capacitance c t 2.0 pf v r = 0v, f = 1.0mhz reverse recovery time t rr 5.0 ns i f = i r =...
Description DIODE SCHTKY CA 70V 200MW SOT-23 0.07 A, 70 V, 2 ELEMENT, SILICON, SIGNAL DIODE
DIODE SCHTKY CC 70V 200MW SOT-23 0.07 A, 70 V, 2 ELEMENT, SILICON, SIGNAL DIODE

File Size 66.76K  /  3 Page

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    Diodes, Inc.
DIODES INC
Part No. BAS70W-06-7
OCR Text ...(note 2) v f 410 1000 mv t p <300s, i f = 1.0ma t p <300s, i f = 15ma reverse current (note 2) i r 100 na t p < 300s, v r = 50v total capacitance c t 2.0 pf v r = 0v, f = 1.0mhz reverse recovery time t rr 5.0 ns i f = i r = ...
Description 0.07 A, 70 V, 2 ELEMENT, SILICON, SIGNAL DIODE ULTRA SMALL, PLASTIC PACKAGE-3

File Size 66.95K  /  3 Page

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