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  400v 0.10a 35 Datasheet PDF File

For 400v 0.10a 35 Found Datasheets File :: 1143    Search Time::4.734ms    
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    IRF740A

IRF[International Rectifier]
Part No. IRF740A
OCR Text ...eed power switching l VDSS 400v Rds(on) max 0.55 ID 10A Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche ...
Description HEXFET Power MOSFET
HEXFET? Power MOSFET

File Size 88.09K  /  8 Page

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    IRFAG50 IRFAG50-15

International Rectifier
Part No. IRFAG50 IRFAG50-15
OCR Text ...GS= 10V, ID=5.6A VDS =500V VDD =400v*, ID =5.6A, RG =2.35 Drain-to-Source Breakdown Voltage Temperature Coefficient of Breakdown Voltage ...0.25in. from package) to source lead (6mm/0.25in. from package) Ciss Coss Crss Input Capacitan...
Description 1000V Single N-Channel Hi-Rel MOSFET in a TO-204AA package
HEXFET?TRANSISTORS 1000V, N-CHANNEL
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
Simple Drive Requirements

File Size 144.82K  /  7 Page

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    IRFF420

International Rectifier
Part No. IRFF420
OCR Text ...50A VDS > 15V, IDS = 1.0A VDS= 400v, VGS=0V VDS = 400v VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =10V, ID =1.5A VDS= 250V VDD = 250V, ID...0.25in. from package) to source lead (6mm/0.25in. from package) Ciss Coss Crss Input Capacitan...
Description HEXFET? TRANSISTORS

File Size 127.38K  /  7 Page

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    STW20NM50FD

STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. STW20NM50FD
OCR Text ...esistance VGS = 0V, VDS = 0V to 400v f=1 MHz Gate DC Bias=0 Test Signal Level=20mV Open Drain Test Conditions VDS > ID(on) x RDS(on)max, ID = 10A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 9 1380 290 40 130 2.8 Max. Unit S pF pF pF pF 1. P...
Description N-CHANNEL Power MOSFET
N-CHANNEL 500V - 0.22ohm - 20A TO-247 FDmesh Power MOSFET with FAST DIODE
N-CHANNEL 500V 0.22 OHM 20A TO-247 FDMESH POWER MOSFET
N-CHANNEL 500V - 0.22ohm - 20A TO-247 FDmesh⑩ Power MOSFET with FAST DIODE
N-CHANNEL 500V 0.22 OHM 20A TO-247 FDMESH POWER MOSFET

File Size 247.27K  /  8 Page

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    STW20NM50

??????浣?
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. STW20NM50
OCR Text ...esistance VGS = 0V, VDS = 0V to 400v f=1 MHz Gate DC Bias = 0 Test Signal Level = 20mV Open Drain Test Conditions VDS > ID(on) x RDS(on)max, ID = 10A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 10 1480 285 34 130 1.6 Max. Unit S pF pF pF pF ...
Description N-CHANNEL 500V - 0.20ohm - 20A TO-247 MDmesh?┬ower MOSFET
N-CHANNEL Power MOSFET
N-CHANNEL 500V - 0.20ohm - 20A TO-247 MDmesh⑩Power MOSFET
N-CHANNEL 500V - 0.20 OHM - 20A TO-247 MDMESH POWER MOSFET
N-CHANNEL 500V - 0.20ohm - 20A TO-247 MDmesh?Power MOSFET
N-CHANNEL 500V - 0.20 OHM - 20A TO-247 MDMESH POWER MOSFET

File Size 254.87K  /  8 Page

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    IRFP17N50LS

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRFP17N50LS
OCR Text ..., VGS = 0V --- --- 2.0 mA VDS = 400v, VGS = 0V, TJ = 125C --- --- 100 VGS = 30V nA --- --- -100 VGS = -30V Min. 11 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- --- --- --- 21 51 50 28 2760 325 37 3690 84 159 Max. Units Condi...
Description Power MOSFET(Vdss=500V, Rds(on)typ.=0.28ohm, Id=16A) 功率MOSFET(减振钢板基本\u003d 500V及的Rdson)典\u003d 0.28ohm,身份证\u003d 16A条)
500V Single N-Channel HEXFET Power MOSFET in a SMD-247 package

File Size 116.56K  /  8 Page

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    STTA2006P STTA2006PI

STMicroelectronics
Part No. STTA2006P STTA2006PI
OCR Text ... =-50A/s VR =30V Tj = 125C VR = 400v dIF/dt = -160 A/s dIF/dt = -500 A/s Tj = 125C VR = 400v dIF/dt = -500 A/s IF =20A 12.5 17.5 IF =20A 0.42 / Min Typ 30 60 A Max Unit ns IRM S factor TURN-ON SWITCHING Symbol t fr Parameter Forwar...
Description TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

File Size 65.13K  /  8 Page

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    IRFS11N50A IRFS11N50ATRR IRFS11N50ATRL

International Rectifier
IRF
Part No. IRFS11N50A IRFS11N50ATRR IRFS11N50ATRL
OCR Text ...DS = 500V, VGS = 0V A 250 VDS = 400v, VGS = 0V, TJ = 125C 100 VGS = 30V nA -100 VGS = -30V Dynamic @ TJ = 25C (unless otherwise specified...0.50 --- Max. 0.75 --- 62 Units C/W Diode Characteristics Min. Typ. Max. Units IS ISM ...
Description 500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
SMPS MOSFET

File Size 116.74K  /  9 Page

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