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  48.0v Datasheet PDF File

For 48.0v Found Datasheets File :: 3446    Search Time::2.266ms    
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    Icemos Technology
Part No. ICE4N70
OCR Text ... =10v 1.0 typ q g v ds =480v 21nc typ icemos and its sister company 3 d semi own the fundamental patents for superjunction mosfets . the majority of these patents have 17 to 20 ye...
Description N-Channel Enhancement Mode MOSFET

File Size 552.75K  /  9 Page

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    Micross Components
Part No. ICE4N70FP
OCR Text ...v/dt ruggedness 50 v/ns v ds = 480v, i d = 4a, t j = 125c v gs gate source voltage 20 v static 30 ac (f>hz) p tot power dissipation 35 w t c = 25c t j , t stg operating and storage temperature -55 to +150 c mounting torque 60 ncm m 3...
Description N-Channel Enhancement Mode MOSFET

File Size 738.03K  /  4 Page

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    ICE4N70D

Icemos Technology
Comchip Technology
Part No. ICE4N70D
OCR Text ... =10v 1.0 typ q g v ds =480v 21nc typ icemos and its sister company 3 d semi own the fundamental patents for superjunction mosfets . the majority of these patents have 17 to 20 ye...
Description Enhancement Mode MOSFET

File Size 604.21K  /  9 Page

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    TY Semiconductor Co., Ltd
Part No. AOB12T60P
OCR Text ...g 33 50 nc q gs 13 nc m a v ds =480v, t j =125c maximum body-diode pulsed current c effective output capacitance, energy related h effective output capacitance, time related i v gs =0v, v ds =100v, f=1mhz v gs =0v, v ds =0 to 480v, f=1mh...
Description Trench Power AlphaMOS-II technology

File Size 1,081.98K  /  6 Page

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    AOWF4S60

Alpha & Omega Semiconductors
Part No. AOWF4S60
OCR Text ...=0v v ds =5v,i d =250 m a v ds =480v, t j =150c zero gate voltage drain current body diode reverse recovery charge i f =2a,di/dt=100a/ m s,v ds =400v maximum body-diode pulsed current c turn-on delaytime dynamic parameters turn-on rise time...
Description 600V 4A a MOS TM Power Transistor

File Size 281.86K  /  6 Page

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    ABD-100

List of Unclassifed Manufacturers
Part No. ABD-100
OCR Text ...00/220, 230, 240, 380, 400/440, 480v) ul: pushbuttons and selector switches: a600 pilot lights and illuminated pushbuttons, direct supply pilot lights and illuminated pushbuttons with integral transformer (100/110, 115, 120, 200/220, 230, ...
Description TWTD Series Full Size NEMA Pushbuttons

File Size 2,614.58K  /  30 Page

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    Xian Semipower Electronic Technology Co., Ltd.
Part No. SW7N60
OCR Text ... =600v, v gs =0v - - 1 ua v ds =480v, t c =125 o c - - 20 ua i gss gate to source leakage current, forward v gs =30v, v ds =0v - - 100 na gate to source leakage current, reverse v gs = - 30v, v ds =0v - - - 100 na on characteristics v gs(th...
Description N-channel Mosfet

File Size 374.64K  /  5 Page

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    STB6NK60Z STB6NK60Z-1 STB6NK60ZT4 STP6NK60ZFP STP6NK60Z

STMICROELECTRONICS[STMicroelectronics]
Part No. STB6NK60Z STB6NK60Z-1 STB6NK60ZT4 STP6NK60ZFP STP6NK60Z
OCR Text ... pF pF VGS = 0V, VDS = 0V to 480V SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Test Conditions VDD = 300 V, ID = 3 A RG = 4.7 VGS = 10 V (Resistive Load see, Figure 3) VDD = 480V, ID = 6 A, VGS = 10V Min. Typ. 14 14 33 6 17 46 Max. Unit ...
Description N-CHANNEL 600V - 1ohm - 6A TO-220/TO-220FP/D2PAK/I2PAK Zener-Protected SuperMESH?Power MOSFET
N-CHANNEL 600V - 1ohm - 6A TO-220/TO-220FP/D2PAK/I2PAK Zener-Protected SuperMESHPower MOSFET
N-CHANNEL 600V 1 OHM 6A TO-220/TO-220FP/D2PAK/I2PAK ZENER-PROTECTED SUPERMESH POWER MOSFET
N-CHANNEL 600V - 1ohm - 6A TO-220/TO-220FP/D2PAK/I2PAK Zener-Protected SuperMESH⑩Power MOSFET

File Size 576.61K  /  13 Page

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    IRGMC40F

International Rectifier
Part No. IRGMC40F
OCR Text ... ??? ??? 52 i c = 20a, v cc = 480v t r rise time ??? ??? 74 v ge = 15v, r g = 9.1 ? t d(off) turn-off delay time ??? ??? 410 energy losses include "tail" t f fall time ??? ??? 420 see fig. 9, 10 & 13 e on turn-on switching loss ??? 0.6 ...
Description 600V DISCRETE Hi-Rel IGBT in a TO-254AA package

File Size 544.61K  /  8 Page

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    AP02N60H-H

Advanced Power Electronics Corp.
Part No. AP02N60H-H
OCR Text ...ge current (t j =150 o c) v ds =480v , v gs =0v - - 100 ua i gss gate-source leakage v gs =+ 30v - - + 100 na q g total gate charge 3 i d =1.4a - 14 20 nc q gs gate-source charge v ds =480v - 2 - nc q gd gate-drain ("miller") charge v gs ...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 241.04K  /  6 Page

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