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5.08 2 225 Datasheet PDF File

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				MOTOROLA[Motorola, Inc]
Part No.	MRF571 MRF5711LT1 MMBR571LT1
OCR Text	...h Power Gain Gpe (matched) = 13.5 dB (Typ) (MRF5711LT1) * State-of-the-Art Technology Fine Line Geometry Ion-Implanted Arsenic Emitters Gold...08, STYLE 6 SOT-23 LOW PROFILE MMBR571LT1 MAXIMUM RATINGS Rating Collector-Emitter Voltage Colle...
Description	NPN Silicon High-Frequency Transistors
File Size	210.47K / 16 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	MSA-0686 MSA-0686-BLK MSA-0686-TR1 MSA0686
OCR Text	...lock * Low Operating Voltage: 3.5 V Typical Vd * 3 dB Bandwidth: DC to 0.8 GHz * High Gain: 18.5 dB Typical at 0.5 GHz * Low Noise Figure: 3...08 .08 .09 .12 .15 .25 .34 .43 .49 .56 .61 .70 -175 -169 -164 -158 -154 -152 -152 -154 -171 171 1...
Description	Cascadable Silicon Bipolar MMIC Amplifier
File Size	45.78K / 4 Page	View it Online	Download Datasheet

				Dynex Semiconductor Ltd. DYNEX[Dynex Semiconductor]
Part No.	AN4839 AN4869 AN4505 AN4506
OCR Text	... mm unless stated otherwise. 0.5 0.48 THERMAL RESISTANCE (C/W) 0.15 THERMAL RESISTANCE (C/W) 0.46 0.44 0.42 0.4 0.38 0.36 0.34 0.32...08 200W 50 0.075 125 175 225 275 325 375 HEATSINK LENGTH (mm) Cross sectional area (cm2)...
Description	Circular Connector; No. of Contacts:23; Series:MS27656; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:17; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No LJT 55C 55#22D PIN RECP Power Assemblies
File Size	115.58K / 5 Page	View it Online	Download Datasheet

				Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
Part No.	APT5020SVFR APT5020
OCR Text	...ate Resistance (VGS = 10V, 0.5 ID[Cont.]) Ohms A nA Volts 050-5569 Rev B Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Ze...08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) 13.41 (.528) 13.51 (.532) 3 1.04 (...
Description	24 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 500V 26A 0.200 Ohm
File Size	64.36K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
Part No.	APT5020 APT5020SVR
OCR Text	...ate Resistance (VGS = 10V, 0.5 ID[Cont.]) Ohms A nA Volts 050-5522 Rev B Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Ze...08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) 13.41 (.528) 13.51 (.532) 3 1.04 (...
Description	24 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 500V 26A 0.200 Ohm
File Size	61.79K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5028SVR
OCR Text	...ate Resistance (VGS = 10V, 0.5 ID[Cont.]) Ohms A nA Volts 050-5616 Rev B Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Ze...08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) 13.41 (.528) 13.51 (.532) 3 1.04 (...
Description	POWER MOS V 500V 20A 0.280 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	64.83K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8065SVR
OCR Text	...ate Resistance (VGS = 10V, 0.5 ID[Cont.]) Ohms A nA Volts 050-5577 Rev B Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Ze...08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) 13.41 (.528) 13.51 (.532) 3 1.04 (...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET POWER MOS V 800V 13A 0.650 Ohm
File Size	63.31K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8067HVR
OCR Text	...67HVR UNIT Volts Amps 800 11.5 46 30 40 200 1.6 -55 to 150 300 11.5 30 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient...08 (.200) BSC 050-5818 Rev B Dimensions in Millimeters and (Inches) APT's devices are covered...
Description	POWER MOS V 800V 11.5A 0.670 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	59.92K / 4 Page	View it Online	Download Datasheet

				HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
Part No.	ATF-13100 ATF-13100-GP3
OCR Text	...2 GHz * High Associated Gain: 9.5 dB Typical at 12 GHz * High Output Power: 17.5 dBm Typical P1 dB at 12 GHz This GaAs FET device has a n...08 .02 .08 .15 .23 .31 .36 .40 Ang. -16 -24 -33 -41 -48 -54 -64 -75 -84 -104 160 106 103 100 90 82 7...
Description	2-18 GHz Low Noise Gallium Arsenide FET(2-18 GHz 浣??澹扮???? FET) 2-18 GHz Low Noise Gallium Arsenide FET(2-18 GHz 低噪声砷化镓 FET) 2-18 GHz的低噪声砷化镓场效应管（2-18 GHz的低噪声砷化镓场效应管）
File Size	38.39K / 3 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-13736 ATF-13736-STR ATF-13736-TR1
OCR Text	... 12 GHz * High Output Power: 17.5 dB Typical at 12 GHz * Cost Effective Ceramic Microstrip Package * Tape-and-Reel Packaging Option Availabl...08 3.02 3.14 3.13 2.99 2.75 2.53 2.41 2.24 2.08 1.99 1.83 1.70 Ang. 128 109 91 69 51 24 -1 -22 -43 -...
Description	2-16 GHz Low Noise Gallium Arsenide FET
File Size	44.11K / 4 Page	View it Online	Download Datasheet

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