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  5.25.8ghz Datasheet PDF File

For 5.25.8ghz Found Datasheets File :: 763    Search Time::1.89ms    
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    VISHAY DALE
Part No. IMC-0402 IMC-04026.8NH5
OCR Text ... Inductance Tolerance: 1.0nH to 5.6nH 0.3nH. 6.8nH to 47nH 5%. Temperature Rating: - 40C to + 85C. MATERIAL SPECIFICATIONS Core Materi...25% 0.3nH, 20% 0.3nH, 17% 0.3nH, 14% 0.3nH, 11% 0.3nH, 9% 0.3nH, 8% 0.3nH, 6% 0.3nH, 5% 5% 5...
Description 1 ELEMENT, 0.0068 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
From old datasheet system
High Frequency, Laser Spiral, Coated, Surface Mount

File Size 56.65K  /  2 Page

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    Linear
Part No. LTC1757A 1757AIS
OCR Text ...Transmitter LTC1757A-2 1 2 3 4 5 VIN RF SHDN BSEL GND VCC VPCA VPCB TXEN PCTL 10 9 8 7 6 900MHz TXEN RF PA DIRECTIONAL COUPLER DIPLEXER ...25% Duty Cycle ...................................... 20mA Operating Temperature Range (Note 2) .......
Description Single/Dual Band RF Power Controllers
From old datasheet system

File Size 184.99K  /  12 Page

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    Zarlink
Part No. SP8910MP
OCR Text ... OUTPUT GND SP8910 3 4 6 5 MP8 Figure 2 - Pin connections - top view Electrical Characteristics These characteristics are gua...25 29*0 Max. 92 5*0 5*5 180 570 24*0 Units mA GHz GHz mVrms mVrms mVrms mVrms Vp-p dBm Conditions ...
Description 5GHZ ÷ 10 Fixed Modulus Divider

File Size 395.33K  /  6 Page

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    STB7002TR STB7002 7002

ST Microelectronics
http://
STMicroelectronics
意法半导
Part No. STB7002TR STB7002 7002
OCR Text ...4.0 0.0 18.0 26.0 9 2.9 2.6 -15.5 -19 -27 -4 -9 -17 2.5:1 2.2:1 1.5:1 1.3:1 1.5:1 1.8:1 15 % Gp1(1) Gp2(1) Gp3(1) Test Conditions Min. 2.7 8...25 0.36 0.13 0.18 2.95 3.05 0.65 BSC 2.95 3.05 4.78 5.03 0.41 0.66 0 6 2.210 2.515 1.575 1.880 A ...
Description 1.8 GHZ THREE GAIN LEVEL LNA
1.8GHz THREE GAIN LEVEL LNA
1805 MHz - 1880 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER

File Size 368.53K  /  7 Page

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    INFINEON[Infineon Technologies AG]
Part No. BGA428
OCR Text ...3V SIEGET(R)-45 technology 4 5 6 2 1 3 VPS05604 Tape loading orientation Top View 654 PGs 123 Direction of Unreeling Positio...25.1 -28.7 -32.2 -36.0 -37.5 -39.1 -42.3 -45.6 -53.3 -64.9 -75.1 -81.7 Application Circuit Charac...
Description BGA428 High Gain/ Low Noise Amplifier
BGA428 High Gain Low Noise Amplifier
Silicon MMICs - 19dB LNA, 1.4...2.5GHz, NF=1.4dB, 50Ohm, SOT363

File Size 433.24K  /  9 Page

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    Sony
Part No. CXG1045N
OCR Text ...voltage: Vctl (H) - Vctl (L): 2.5 to 5V @Ta = 25C GaAs MMICs are ESD sensitive devices. Special handling precautions are required. So...25 - 0.1 0.1 8 5 A 4.4 0.1 1 4 0.65 + 0.08 0.24 - 0.07 B 0.25 0.13 M 0.1 0.05 6....
Description High Power DPDT Switch for GSM
From old datasheet system

File Size 60.34K  /  5 Page

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    Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FA01219A
OCR Text ...dBm 2 7 3 6 4 5 APPLICATION PDC0.8GHz GND 10.0 0.8 2.0 6.0 1 RF INPUT 2 VD1 3 4 5 6 GND VD2 RF OUTPUT GND...25 IDt ID2 600 500 400 300 30 PO ACP+50k ACP-50k 25 20 -60 ACP+100k ACP-100k -70 2...
Description GaAs FET HYBRID IC
From old datasheet system

File Size 22.92K  /  4 Page

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    FLC057WG

Eudyna Devices Inc
Part No. FLC057WG
OCR Text ...h Tc = 25C Condition Rating 15 -5 3.75 -65 to +175 175 Unit V V W C C Fujitsu recommends the following conditions for the reliable operat...25 mA respectively with gate resistance of 1000. 3. The operating channel temperature (Tch) should n...
Description C-Band Power GaAs FET

File Size 86.42K  /  4 Page

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    FLC157XP

Eudyna Devices Inc
Part No. FLC157XP
OCR Text ... 6.0dB(Typ.) High PAE: add = 29.5%(Typ.) Proven Reliability Drain Drain DESCRIPTION The FLC157XP chip is a power GaAs FET that is ...25 27 Input Power (dBm) 9 10 Drain-Source Voltage (V) 2 add (%) 32 add 30 ...
Description GaAs FET & HEMT Chips

File Size 55.15K  /  4 Page

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    Q62702-F1377 BFP180

SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. Q62702-F1377 BFP180
OCR Text ...ion Symbol Values 8 10 10 2 4 0.5 mW 30 150 - 65 ... + 150 - 65 ... + 150 875 C mA Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg 1) ...25 - IC = 3 mA, VCE = 5 V, f = 500 MHz Collector-base capacitance Ccb Cce - VCB = 5 V, VB...
Description NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA)
From old datasheet system

File Size 76.23K  /  8 Page

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For 5.25.8ghz Found Datasheets File :: 763    Search Time::1.89ms    
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