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White Electronic Designs Corporation
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| Part No. |
EDI2CG272128V9D1 EDI2CG272128V12D1 EDI2CG272128V15D1 EDI2CG272128V85D1 EDI2CG272128V-D1
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| Description |
2x128Kx72, 3.3V S nc/S nc burst Flow-Through(2x128Kx72, 3.3Vns,同步/同步脉冲静态RAM模块(流通结构）)
2x128Kx72, 3.3V S nc/S nc burst Flow-Through(2x128Kx72, 3.3V2ns,同步/同步脉冲静态RAM模块(流通结构）)
2x128Kx72, 3.3V S nc/S nc burst Flow-Through(2x128Kx72, 3.3V5ns,同步/同步脉冲静态RAM模块(流通结构）)
2x128Kx72.3VS数控/ s的数控突发流量通过x128Kx72.3伏，15纳秒，同同步脉冲静态内存模块（流通结构）
2x128Kx72.3VS数控/ s的数控突发流量通过x128Kx72.3伏，12ns，同同步脉冲静态内存模块（流通结构）
2x128Kx72.3VS数控/ s的数控突发流量通过x128Kx72.3伏，纳秒，同同步脉冲静态内存模块（流通结构）
SSRAM Modules 的SSRAM模块
2x128Kx72, 3.3V Sync/Sync burst Flow-Through(2x128Kx72, 3.3V.5ns,同步/同步脉冲静态RAM模块(流通结构）) 2x128Kx72.3同步/同步突发流量通过2x128Kx72.3伏，8.5ns，同同步脉冲静态内存模块（流通结构）
2x128Kx72, 3.3V Sync/Sync burst Flow-Through(2x128Kx72, 3.3V锛?.5ns,???/?????????RAM妯″?(娴??缁??锛?
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| File Size |
172.76K /
11 Page |
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SPANSION LLC
Spansion, Inc.
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| Part No. |
S30MS512P25BAW000 S30MS512P25BAW003 S30MS512P25BFW002 S30MS512P25BFW003 S30MS512P25BAW010 S30MS512P25BAW510 S30MS512P25BFW000 S30MS512P25BAW512 S30MS512P25BAW002 S30MS512P25BAW013 S30MS512P25BAW513 S30MS512P25BFW010 S30MS512P25BFW012 S30MS512P25BFW013 S30MS512P25BFW500 S30MS512P25BAW500 S30MS512P25BAW012 S30MS512P25BAW502 S30MS512P25BAW503 S30MS01GP25BAW513 S30MS01GP25BAW512 S30MS01GP25BAW510 S30MS01GP25BAW503 S30MS01GP25BAW500 S30MS01GP25BAW502 S30MS01GP25BAW010 S30MS01GP25TAW010 S30MS01GP25BFW000 S30MS01GP25BFW002 S30MS01GP25BFW010 S30MS01GP25BFW003 S30MS01GP25BFW013 S30MS01GP25BFW512 S30MS01GP25BAW000 S30MS01GP25BAW012 S30MS01GP25BAW013 S30MS01GP25TAW002 S30MS-P S30MS01GP25BFW012 S30MS01GP25BAW002 S30MS01GP25BFW502 S30MS01GP25BFW510 S30MS01GP25BFW513 S30MS01GP25BAW003 S30MS01GP25BFW500 S30MS01GP25BFW503 S30MS01GP25TAW000 S30MS01GP25TAW003 S30MS01GP25TAW013 S30MS512P25TAW000 S30MS512P25TAW002 S30MS512P25TAW003 S30MS512P25TAW010 S30MS512P25TAW013 S30MS01GP25TAW510 S30MS01GP25TFW510 S30MS512P25BFW510 S30MS512P25TAW510 S30MS512P25TFW510 S30MS01GP25TAW012 S30MS01GP25TFW003 S30MS01GP25TAW513 S30MS01GP25TFW010 S30MS01GP25TFW002 S30MS01GP25TFW503 S30MS01GP25TFW000 S30MS01GP25TAW503 S30M
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| Description |
32m X 16 FLASH 1.8V PROM, 25 ns, PBGA137
1Gb/512mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit??Technology
1Gb/512mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBitTechnology 128M X 8 FLASH 1.8V PROM, 25 ns, PBGA137
1Gb/512mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit?/a> Technology
1Gb/512mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit Technology
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| File Size |
661.37K /
41 Page |
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Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
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| Part No. |
CY7C1415BV18-250BZI CY7C1415BV18-167BZI
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| Description |
36-Mbit QDR(TM)-II SRAM 4-Word burst Architecture; Architecture: QDR-II, 4 Word burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V 1M X 36 QDR SRAM, 0.45 ns, PBGA165
36-Mbit QDR™-II SRAM 4-Word burst Architecture
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| File Size |
956.33K /
30 Page |
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ETC
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
List of Unclassifed Man...
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| Part No. |
GS832218B-133 GS832218B-133I GS832218B-150 GS832218B-150I GS832218B-166 GS832218B-166I GS832218B-200 GS832218B-200I GS832218B-225 GS832218B-225I GS832218B-250 GS832218B-250I GS832272C-133 GS832272C-133I GS832272C-150 GS832272C-150I GS832272C-166 GS832272C-166I GS832272C-200 GS832272C-200I GS832272C-225 GS832272C-225I GS832218 GS832218B GS832218E GS832218E-133 GS832218E-133I GS832218E-150 GS832218E-150I GS832218E-166 GS832218E-166I GS832218E-200 GS832218E-225 GS832218E-225I GS832218E-250 GS832218E-250I GS832236 GS832236B GS832236B-133 GS832236E-133 GS832236E-133I GS832236E-150 GS832236E-150I GS832236E-166 GS832236E-166I GS832236E-200 GS832236E-200I GS832236E-225 GS832236E-225I GS832236E-250 GS832236E-250I GS832236B-250 GS832236B-200 GS832236B-133I GS832236B-166 GS832236B-225 GS832236B-150 GS832236B-200I GS832236B-225I GS832236B-150I GS832236B-166I GS832236B-250I GS832272 GS832272C-250 GS832272C-250I
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| Description |
64K 3.3 VOLT SERIAL CONFIGURATION PROM 200万1800万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
GIGABASE 350 CAT5E PATCH 1 FT, SNAGLESS, WHITE 200万1800万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync burst SRAMs 200万18100万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync burst SRAMs 200万1800万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync burst SRAMs 200万1800万36，为512k × 72分配36MBS /双氰胺同步突发静态存储器
DIODE, ZENER, 4.3V, 0.5W, 5%, -65-175C, DO-35
(GS832218 / GS832236 / GS832272) S/DCD Sync burst SRAMs
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| File Size |
833.90K /
41 Page |
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it Online |
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Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
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| Part No. |
AS7C3364PFS36A-166TQI AS7C3364PFS32A AS7C3364PFS32A-100TQC AS7C3364PFS32A-100TQI AS7C3364PFS32A-133TQC AS7C3364PFS32A-133TQI AS7C3364PFS32A-150TQC AS7C3364PFS32A-150TQI AS7C3364PFS32A-166TQC AS7C3364PFS32A-166TQI AS7C3364PFS36A AS7C3364PFS36A-100TQC AS7C3364PFS36A-100TQI AS7C3364PFS36A-133TQC AS7C3364PFS36A-133TQI AS7C3364PFS36A-150TQC AS7C3364PFS36A-150TQI AS7C3364PFS36A-166TQC
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| Description |
3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 36 STANDARD SRAM, 9 ns, PQFP100
3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 36 STANDARD SRAM, 10 ns, PQFP100
3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 32 STANDARD SRAM, 10 ns, PQFP100
DIODE ZENER SINGLE 1000mW 16Vz 15.5mA-Izt 0.05 5uA-Ir 12.2Vr DO41-GLASS 5K/REEL 64K X 36 STANDARD SRAM, 12 ns, PQFP100
3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 32 STANDARD SRAM, 12 ns, PQFP100
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| File Size |
216.30K /
11 Page |
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it Online |
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Price and Availability
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