6.90.1 1.5 2.50.1 1.0
s Features
q q q
1.5 R0.9 R0.9
0.4
2.40.2 2.00.2 3.50.1
High collector to base voltage VCBO. High coll...12
0 0 - 0.2 - 0.4 - 0.6 - 0.8 -1.0
Ambient temperature Ta (C)
Collector to emitter voltage...
6.90.1 2.50.1 1.0
1.0 2.40.2 2.00.2 3.50.1
s Features
q q
1.5
0.4
1.5 R0.9 R0.9
High foward current transfer ratio hFE. M typ...12 -16
0 0 -150 -300 -450
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
...
...lementary to 2SD638 and 2SD639
6.90.1 1.5 2.50.1 1.0
1.0 2.40.2 2.00.2 3.50.1
Unit: mm
s Features
q
1.5 R0.9 R0.9
1.00.1
0...12
-16
-20
0
-2
-4
-6
-8
-10
Ambient temperature Ta (C)
Collector to e...
Description
Silicon PNP epitaxial planer type(For low-power general amplification)
... 0.1 A - 0.35 - 0.60 -1.1 200 6 15 -1.5 V V MHz pF
85 40
340
hFE2 Collector-emitter saturation voltage *1 Base-emitter saturation...12
0
Ambient temperature Ta (C)
Collector-emitter voltage VCE (V)
Base current IB (mA)
...