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For 80 sec Found Datasheets File :: 60601 Search Time::1.485ms
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				IRF[International Rectifier]
Part No.	IRF7807VD2 IRF7807VD2TR
OCR Text	... -20 VGS = 4.5V 0 20 40 60 80 100 120 140 160 0.010 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 TJ , Junction Temperature ( C) VGS, Ga...sec) Figure 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 5 ID = 7....
Description	30V FETKY - MOSFET and Schottky Diode in a SO-8 package FETKY MOSFET / SCHOTTKY DIODE FETKY⑩ MOSFET / SCHOTTKY DIODE
File Size	113.54K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7807V
OCR Text	...age (V) VGS = 4.5V 0 20 40 60 80 100 120 140 160 1.5 4 3 1.0 2 0.5 1 0.0 -60 -40 -20 0 0 2 4 6 8 10 12 TJ , ...sec) Figure 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 6 www.irf.c...
Description	N Channel Application Specific MOSFET
File Size	126.34K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7807 IRF7807A IRF7807ATR IRF7807TR
OCR Text	...n VSD Qrr Qrr(s) Typ Max 1.2 80 50 Min Typ Max Units 1.2 80 50 V nC Repetitive rating; pulse width limited by max. junction temp...sec. Typ = measured - Qoss Devices are 100% tested to these parameters. 2 www.irf.com IRF78...
Description	8.3 A, 30 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET Chip-Set for DC-DC Converters 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
File Size	238.61K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7811AV IRF7811AVTR
OCR Text	...5 0.0 -60 -40 -20 0 20 40 60 80 100 V GS = 4.5V 120 140 160 0 0 5 10 15 20 T J , Junction Temperature ( C) Q G , Total Gate...sec) Figure 7. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 50 u 8V ...
Description	Si, SMALL SIGNAL, FET, MS-012AA N-Channel Application-Specific MOSFETs
File Size	85.36K / 6 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF840AL IRF840AS IRF840ASTRR
OCR Text	...40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical T...sec) www.irf.com 5 IRF840AS/L 1 5V 1200 EAS , Single Pulse Avalanche Energy (mJ) ...
Description	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 8A I(D) \| TO-263AB 晶体管\| MOSFET的\| N沟道\| 500V五（巴西）直\| 8A条（丁）\|63AB Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) 功率MOSFET（减振钢板基本\u003d 500V及的Rds（on）最大值\u003d 0.85ohm，身份证\u003d 8.0A Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)
File Size	125.49K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF840A
OCR Text	...40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical T...sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 ...
Description	Power MOSFET(Vdss=500V/ Rds(on)max=0.85ohm/ Id=8.0A) Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)
File Size	87.92K / 8 Page	View it Online	Download Datasheet

				SEMELAB LTD SEME-LAB[Seme LAB]
Part No.	IRF9140
OCR Text	...ACKAGE 1 20.32 (0.800) 18.80 (0.740) dia. 7.87 (0.310) 6.99 (0.275) 1.78 (0.070) 1.52 (0.060) 11.18 (0.440) 10.67 (0.420) 26.67 ...sec. Notes 1) Pulse Test: Pulse Width 300s, 2% 2) @ VDD = -25V , L 2.3mH , RG = 25 , Peak IL ...
Description	P-CHANNEL POWER MOSFET
File Size	21.26K / 2 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9230 JANTXV2N6806 JANTX2N6806
OCR Text	...r IRF9230 BVDSS -200V RDS(on) 0.80 ID -6.5A The HEXFETtechnology is the key to International Rectifier's advanced line of power MOSFET t...sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to...
Description	TRANSISTORS P-CHANNEL(Vdss=-200V, Rds(on)=0.80ohm, Id=-6.5A) CAP CER 250VAC 82PF 5% SL 1808 6.5 A, 200 V, 0.92 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
File Size	148.64K / 7 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF9410
OCR Text	...ts --- --- --- --- 2.8 A 37 1.0 80 130 V ns nC --- 0.78 --- 40 --- 63 Conditions MOSFET symbol showing the G integral reverse p-n junctio...sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient IRF9410 Packa...
Description	Power MOSFET(Vdss=30V, Rds(on)=0.030ohm)
File Size	103.18K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9520NL IRF9520NS
OCR Text	...0 -20 0 VGS = -10V 20 40 60 80 100 120 140 160 180 -VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typi...sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case - V DD IRF9...
Description	Power MOSFET(Vdss=-100V/ Rds(on)=0.48ohm/ Id=-6.8A) Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A) Power MOSFET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8A)
File Size	151.66K / 10 Page	View it Online	Download Datasheet

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