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  800v 16a Datasheet PDF File

For 800v 16a Found Datasheets File :: 250    Search Time::2.016ms    
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    BCR1BM-16AB00

Renesas Electronics Corporation
Part No. BCR1BM-16aB00
OCR Text 800v - 1a - triac low power use features ? i t (rms) : 1 a ? v drm : 800 v (tj = 125 ? c) ? i fgti , i rgti , i rgtiii : 15 m...16a preliminary r07ds0967ej0001 rev.0.01 page 2 of 3 nov 28, 2012 electrical characteristi...
Description 800v - 1A - Triac Low Power Use

File Size 57.55K  /  4 Page

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    2SC3743

Inchange Semiconductor Company Limited
Part No. 2SC3743
OCR Text ...kdown voltage- : v (br)ceo = 800v(min.) wide area of safe operation high speed switching applications designed for high spee...16a 0.6 v v be( sat ) base-emitter saturation voltage i c = 0.8a; i b = 0.16a 1.2 v i...
Description isc Silicon NPN Power Transistor

File Size 77.47K  /  2 Page

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    APT19F100J

Microsemi Corporation
Part No. APT19F100J
OCR Text ...c oss c iss i d = 16a v ds = 800v v ds = 200v v ds = 500v t j = 150c t j = 25c t j = 125c t j = 150c c rss t j = 125c t j = 25c t j = -55c v gs , gate-to-source voltage (v) g fs , transconductance r ds(on) , drain-to-so...
Description N-Channel FREDFET

File Size 115.02K  /  4 Page

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    APT31M100B209

Microsemi Corporation
Part No. APT31M100B209
OCR Text ...c oss c iss i d = 16a v ds = 800v v ds = 200v v ds = 500v t j = 150c t j = 25c t j = 125c t j = 150c c rss t j = 125c t j = 25c t j = -55c v gs , gate-to-source voltage (v) g fs , transconductance r ds(on) , drain-to-so...
Description N-Channel MOSFET

File Size 94.87K  /  4 Page

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    SANYO[Sanyo Semicon Device]
Part No. 2SC5639
OCR Text ...IB=0 IEBO VEB=4V, IC=0 ICBO VCB=800v, IE=0 hFE1 hFE2 VCE=5V, IC=1A VCE=5V, IC=16a Conditions Ratings min 800 1.0 10 20 4 30 7 typ max 1.0 Unit mA V mA A Continued on next page. Any and all SANYO products described or contained herein ...
Description Horizontal Deflection Switching Transistors
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications

File Size 41.50K  /  4 Page

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    SANYO
Part No. 2SC5443
OCR Text ...IB=0 IEBO VEB=4V, IC=0 ICBO VCB=800v, IE=0 hFE1 hFE2 VCE=5V, IC=1.0A VCE=5V, IC=16a Conditions Ratings min 800 1.0 10 20 4 30 7 typ max 1.0 Unit mA V mA A Continued on next page. Any and all SANYO products described or contained herei...
Description Horizontal Deflection Switching Transistors

File Size 46.96K  /  5 Page

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    APT21M100J09

Microsemi Corporation
Part No. APT21M100J09
OCR Text ...c oss c iss i d = 16a v ds = 800v v ds = 200v v ds = 500v t j = 150c t j = 25c t j = 125c t j = 150c c rss t j = 125c t j = 25c t j = -55c v gs , gate-to-source voltage (v) g fs , transconductance r ds(on) , drain-to-so...
Description N-Channel MOSFET

File Size 99.37K  /  4 Page

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    MICROSEMI[Microsemi Corporation]
Part No. APT19F100J_07
OCR Text ...e 0 Rev B 3-2007 VDS = 800v 40 200 100 I 200 100 ID, DRAIN CURRENT (A) DM APT19F100J ID, DRAIN CURRENT (A) IDM 10 13s 100s 10 Rds(on) 13s 100s 1ms 10ms 100ms DC line 1 1ms Rds(on) 1 10...
Description N-Channel FREDFET

File Size 260.51K  /  4 Page

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    MICROSEMI[Microsemi Corporation]
Part No. APT19F100J
OCR Text ...e 0 Rev A 9-2006 VDS = 800v 40 200 100 I 200 100 ID, DRAIN CURRENT (A) DM APT19F100J ID, DRAIN CURRENT (A) IDM 10 13s 100s 10 13s 100s Rds(on) 1ms 10ms 1 1ms Rds(on) 10ms 100ms 1 TJ ...
Description 1000V, 19A, 0.46ヘ Max, trr ÷270ns

File Size 397.59K  /  4 Page

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    MICROSEMI[Microsemi Corporation]
Part No. APT21M100J
OCR Text ...e 0 Rev A 2-2007 VDS = 800v 40 200 100 I 200 100 ID, DRAIN CURRENT (A) DM APT21M100J ID, DRAIN CURRENT (A) IDM 10 13s 100s 1ms 10 13s 100s 1ms Rds(on) 10ms 100ms TJ = 150C TC = 25C DC line Scal...
Description N-Channel MOSFET

File Size 240.73K  /  4 Page

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