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  b 2 Datasheet PDF File

For b 2 Found Datasheets File :: 308119    Search Time::2.594ms    
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    2SD602 2SD602A

Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. 2SD602 2SD602A
OCR Text ...0 VCE=10V Ta=25C 700 IC -- I b Collector power dissipation PC (mW) Collector current IC (mA) 600 500 Collector current IC (mA...2 4 6 8 10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) base...
Description Silicon NPN epitaxial planer type<br>
File Size 38.99K  /  2 Page

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    2SD637 2SD0637

Panasonic Semiconductor
Part No. 2SD637 2SD0637
OCR Text ...0 240 VCE=10V Ta=25C IC -- I b Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 0.3 0.1 0.03 0.01 0.1 VCE(sat) -- ...2 1.6 2.0 0 0 200 400 600 800 1000 0.3 1 3 10 30 100 base to emitter voltage...
Description Silicon NPN epitaxial planer type small signal transistor<br>
File Size 45.73K  /  3 Page

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    2SD638 2SD639

PANASONIC[Panasonic Semiconductor]
Part No. 2SD638 2SD639
OCR Text ...0 VCE=10V Ta=25C 700 IC -- I b Collector power dissipation PC (mW) 700 Collector current IC (mA) 600 500 400 300 200 100 0 0 ...2 4 6 8 10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) base...
Description Silicon NPN epitaxial planer type(For medium-power general amplification)<br>
File Size 39.03K  /  2 Page

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    2SD661 2SD661A

PANASONIC[Panasonic Semiconductor]
Part No. 2SD661 2SD661A
OCR Text ...60 VCE=5V Ta=25C 140 IC -- I b Collector power dissipation PC (mW) Collector current IC (mA) 120 100 Collector current IC (mA...2 4 6 8 10 12 0 0.1 0.2 0.3 0.4 0.5 Ambient temperature Ta (C) Collector to ...
Description Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification)<br>
File Size 50.15K  /  3 Page

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    2SD667 2SD667A

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SD667 2SD667A
OCR Text ... I C = 500 mA*2 I C = 500 mA, I b = 50 mA*2 VCE = 5 V, I C = 150 mA*2 VCE = 5 V, I C = 150 mA*2 VCb = 10 V, IE = 0, f = 1 MHz Typ -- -- -- -- -- -- -- -- 140 12 120 80 5 -- 60 30 -- -- -- -- DC current transfer ratio hFE1* hFE2 Col...
Description Silicon NPN Epitaxial npn型硅外延<br>Silicon NPN Transistor<br>
File Size 31.22K  /  6 Page

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    2SD669 2SD669A SD669

HITACHI[Hitachi Semiconductor]
Part No. 2SD669 2SD669A SD669
OCR Text ..., IC = 500 mA*2 I C = 500 mA, I b = 50 mA*2 VCE = 5 V, IC = 150 mA*2 VCE = 5 V, IC = 150 mA*2 VCb = 10 V, IE = 0, f = 1 MHz Min 180 120 5 -- 60 30 -- -- -- -- Typ -- -- -- -- -- -- -- -- 140 14 DC current transfer ratio hFE1* hFE2 ...
Description Silicon NPN Epitaxial<br>
File Size 35.10K  /  7 Page

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    2SD768 2SD768K

HITACHI[Hitachi Semiconductor]
Part No. 2SD768 2SD768K
OCR Text ....0 IC/Ib = 200 500 = 500 I C/I b 200 Switching Time vs. Collector Current TC = 25C 3 tstg ton tf VCC = 30V IC = 500 Ib1 = -500 Ib2...2.79 0.2 10.16 0.2 9.5 8.0 3.6 -0.08 +0.1 4.44 0.2 1.26 0.15 6.4 +0.2 -0.1 18.5 0...
Description Silicon NPN Epitaxial<br>
File Size 35.66K  /  6 Page

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    2SD787 2SD788

HITACHI[Hitachi Semiconductor]
Part No. 2SD787 2SD788
OCR Text ...lector output capacitance Note: b 100 to 200 C 160 to 320 Cob 1. The 2SD787 and 2SD788 are grouped by h FE as follows. D 250 to 500 E 400 to 800 2 2SD787, 2SD788 Maximum Collector Dissipation Curve Collector Power Dissipation PC (...
Description Silicon NPN Epitaxial<br>
File Size 30.38K  /  6 Page

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    2SD789

HITACHI[Hitachi Semiconductor]
Part No. 2SD789
OCR Text ...lector output capacitance Note: b 100 to 200 C 160 to 320 D 250 to 500 V(bR)EbO I CbO I EbO hFE* 100 -- -- -- E VCE(sat) fT Cob V MHz pF I C = 1 A, Ib = 0.1 A VCE = 2 V, IC = 10 mA VCb = 10 V, IE = 0, f = 1MHz 1. The 2SD789 i...
Description Silicon NPN Transistor<br>Silicon NPN Epitaxial<br>
File Size 30.04K  /  6 Page

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    2SD882S UTC2SD882S

Unisonic Technologies
Part No. 2SD882S UTC2SD882S
OCR Text ... -Ib=9mA -Ib=8MA -Ib=7mA S/ b 8 0.8 lim ite d D pa si is -Ib=4mA -Ib=3mA -Ib=2mA -Ib=1mA 50 4 n tio 0.4 li...2 10 IE=0 f=1MHz VCE=5V 2 10 -Ic,Collector current(A) 0 1 10 10 0 Ib=8mA 1 10 ...
Description NPN EPITAXIAL SILICON TRANSISTOR<br>
File Size 73.22K  /  2 Page

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