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NEC, Corp.
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| Part No. |
K3P6C1000B-GC15 K3P6C1000B-GC12 K3P6C1000B-GC10
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| OCR Text |
...ss ground n.c no connection 32m-bit (4mx8 /2mx16) cmos mask rom the k3p6c1000b-gc is a fully static mask programmable rom fabricated using silicon gate cmos process technology, and is organized either as 4,194,304x8 bit(byte mode) or as 2,... |
| Description |
2M X 16 MASK PROM, 150 ns, PDSO44 0.600 INCH, SOP-44
2M X 16 MASK PROM, 120 ns, PDSO44 0.600 INCH, SOP-44
2M X 16 MASK PROM, 100 ns, PDSO44 0.600 INCH, SOP-44
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| File Size |
62.29K /
4 Page |
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it Online |
Download Datasheet
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NEC, Corp.
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| Part No. |
K3P6C1000B-TC15 K3P6C1000B-TC12
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| OCR Text |
...ss ground n.c no connection 32m-bit (4mx8 /2mx16) cmos mask rom the k3p6c1000b-tc is a fully static mask programmable rom fabricated using silicon gate cmos process technology, and is organized either as 4,194,304x8 bit(byte mode) or as 2,... |
| Description |
2M X 16 MASK PROM, 150 ns, PDSO44 0.400 INCH, TSOP2-44
2M X 16 MASK PROM, 120 ns, PDSO44 0.400 INCH, TSOP2-44
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| File Size |
62.09K /
4 Page |
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it Online |
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Analog Devices, Inc.
STMicroelectronics N.V.
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| Part No. |
K8P3215UQB-PE4B0 K8P3215UQB-DI4A0
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| OCR Text |
...april 2007 2 document title 32m bit (2m x16) page mode / multi-bank nor flash memory revision history revision no. 0.0 0.1 0.2 0.3 0.4 0.5 ...2mx16. the memory architecture of the dev ice is designed to divide its memory arrays into 78 blocks... |
| Description |
2M X 16 FLASH 2.7V PROM, 60 ns, PDSO48 20 X 12 MM, PLASTIC, TSOP1-48
2M X 16 FLASH 2.7V PROM, 55 ns, PBGA48 6 X 8 MM, 0.80 MM PITCH, LEAD FREE, FBGA-48
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| File Size |
902.64K /
53 Page |
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it Online |
Download Datasheet |
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Samsung Electronic
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| Part No. |
K3N6VU1000E-GC/TC/YC
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| OCR Text |
bit (4Mx8 /2mx16) CMOS MASK ROM
FEATURES
* Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) * Fast access time 3.3V Operation : 100ns(Max.)@CL=50pF, 120ns(Max.)@CL=100pF 3.0V Operation : 120ns(Max.)@CL=100pF * Supply... |
| Description |
32M-bit (4Mx8 /2mx16) CMOS MASK ROM Data Sheet
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| File Size |
47.14K /
3 Page |
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it Online |
Download Datasheet |
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Samsung Electronic
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| Part No. |
K3N6C4000E-DC
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| OCR Text |
bit (2mx16) CMOS MASK ROM
FEATURES
* 2,097,152x16 bit organization * Fast access time 100ns(Max.) : CL=50pF 120ns(Max.) : CL=100pF * Supply voltage : single +5V * Current consumption Operating : 50mA(Max.) Standby : 50A(Max.) * Fully stat... |
| Description |
32M-bit (2mx16) CMOS MASK ROM Data Sheet
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| File Size |
45.35K /
3 Page |
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it Online |
Download Datasheet |
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Samsung Electronic
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| Part No. |
K3N6C1000E-GCTCYC
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| OCR Text |
bit (4Mx8 /2mx16) CMOS MASK ROM
FEATURES
* Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) * Fast access time 100ns(Max.) : CL=50pF 120ns(Max.) : CL=100pF * Supply voltage : single +5V * Current consumption Operatin... |
| Description |
32M-bit (4Mx8 /2mx16) CMOS MASK ROM Data Sheet
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| File Size |
58.56K /
4 Page |
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it Online |
Download Datasheet |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
KM23V32000CG
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| OCR Text |
...ss ground n.c no connection 32m-bit (4mx8 /2mx16) cmos mask rom the km23v32000cg is a fully static mask programmable rom fabricated using silicon gate cmos process technology, and is organized either as 4,194,304 x 8 bit(byte mode) or as 2,... |
| Description |
32M-bit (4Mx8 /2mx16) CMOS Mask ROM(32M4Mx8 /2mx16) CMOS掩膜ROM)
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| File Size |
56.50K /
4 Page |
View
it Online |
Download Datasheet |
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