POWER MOS VI 1000V 11A 1.000 Ohm Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs N-CHANNEL enhancement mode high VOLTAGE POWER MOSFETS
high speed CMOS Logic 7-Stage Binary Ripple Counter 14-TSSOP -55 to 125 SIPMOS Power Transistor (N channel enhancement mode Avalanche-rated dv/dt rated) From old datasheet system
high speed CMOS Logic 7-Stage Binary Ripple Counter 14-TSSOP -55 to 125 SIPMOS功率晶体管(N通道增强模式雪崩额定dv / dt的评价) SIPMOS Power Transistor (N channel enhancement mode Avalanche-rated dv/dt rated) From old datasheet system