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Fairchild Semiconductor, Corp.
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| Part No. |
NMC27C64N
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| OCR Text |
...to be done once. this family of eproms are fabricated with fairchild s proprietary, time proven cmos double-poly silicon gate technology which combines high performance and high density with low power consumption and excellent reliability.... |
| Description |
65,536-BIT (8192 X 8) CMOS EPROM 65,536位（8192 × 8）的CMOS存储
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| File Size |
165.75K /
10 Page |
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it Online |
Download Datasheet
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Intel, Corp.
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| Part No. |
TP28F010-90 TE28F010-150
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| OCR Text |
...o jedec standards for byte-wide eproms. extended erase and program cycling capability is designed into intel's etox? (eprom tunnel oxide) process technology. advanced oxide processing, an optimized tunneling structure, and lower electric f... |
| Description |
28F010 1024K (128K X 8) CMOS FLASH MEMORY 128K X 8 FLASH 12V PROM, 90 ns, PDIP32
28F010 1024K (128K X 8) CMOS FLASH MEMORY 128K X 8 FLASH 12V PROM, 150 ns, PDSO32
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| File Size |
884.01K /
33 Page |
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it Online |
Download Datasheet |
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Intel, Corp.
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| Part No. |
P28F020-90
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| OCR Text |
...o jedec standards for byte-wide eproms. extended erase and program cycling capability is designed into intels etox? (eprom tunnel oxide) process technology. advanced oxide processing, an optimized tunneling structure, and lower electric fi... |
| Description |
28F020 2048K (256K X 8) CMOS FLASH MEMORY 256K X 8 FLASH 12V PROM, 90 ns, PDIP32
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| File Size |
871.03K /
38 Page |
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it Online |
Download Datasheet |
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Price and Availability
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