...on an advanced third generation gaas HBT process, and was designed for use as the final RF amplifier in 3V IS-95/CDMA 2000 1X handheld digit...gan HEMT gaas MESFET Si CMOS SiGe Bi-CMOS
Package Style: QFN, 16-Pin, 3x3
Features * Input Int...
...on an advanced third generation gaas HBT process, and was designed for use as the final RF amplifier in 3V W-CDMA handheld digital cellular ...gan HEMT
gaas MESFET Si CMOS SiGe Bi-CMOS
Features * Input/Output Internally Matched@50 * 28dB...