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  id-34a Datasheet PDF File

For id-34a Found Datasheets File :: 241    Search Time::0.969ms    
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    FQA34N25

Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. FQA34N25
OCR Text ...te Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25C unless otherwise noted Parameter Drain-Source Vo...34A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 14A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25...
Description 250V N-Channel MOSFET 34 A, 250 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 688.01K  /  8 Page

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    34NQ10T

NXP Semiconductors
Part No. 34NQ10T
OCR Text ...lised continuous drain current. id% = 100 i d /i d 25 ?c = f(t mb ); v gs 3 10 v fig.3. safe operating area i d & i dm = f(v ds ); ...34a tj = 25 c vdd = 20 v vdd = 80 v 1 10 100 0.001 0.01 0.1 1 10 avalanche time, t av (ms) maximum ...
Description Search --To PHB34NQ10T

File Size 146.80K  /  12 Page

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    BSS123-7-F

Diodes Incorporated
Diodes, Inc.
Part No. BSS123-7-F
OCR Text ...specified Symbol VDSS VDGR VGSS ID IDM Value 100 100 20 170 680 Units V V V mA Characteristic Drain-Source Voltage Drain-Gate Voltage RGS...34A VDS = 25V, VGS = 0V, f = 1.0MHz VDD = 30V, ID = 0.28A, RGEN = 50, VGS = 10V Part mounte...
Description N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 170 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

File Size 79.12K  /  3 Page

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    BSS123W0711 BSS123W-7-F

Diodes Incorporated
Part No. BSS123W0711 BSS123W-7-F
OCR Text ...specified Symbol VDSS VDGR VGSS ID IDM Value 100 100 20 170 680 Units V V V mA Characteristic Drain-Source Voltage Drain-Gate Voltage RGS...34A NEW PRODUCT Gate-Body Leakage, Forward ON CHARACTERISTICS (Note 5) Gate Threshold Voltage ...
Description N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

File Size 93.16K  /  4 Page

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    IRHLUB7930Z4 IRHLUB7970Z410 JANSR2N7626UB

International Rectifier
Part No. IRHLUB7930Z4 IRHLUB7970Z410 JANSR2N7626UB
OCR Text ... Number Radiation Level RDS(on) ID QPL Part Number IRHLUB7970Z4 100K Rads (Si) 1.4 -0.53A JANSR2N7626UB IRHLUB7930Z4 300K Rads (Si) 1.4 -0.5...34A BOTTOM -0.24A 0.1 Tc = 25C Tj = 150C Single Pulse 0.1 1 10 DC 100 1000 0.01 100 1...
Description RADIATION HARDENED
RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (UB)

File Size 224.75K  /  11 Page

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    STTH1502FP STW34NB2004 W34NB20 STW34NB20 STW34NB20_04

STMICROELECTRONICS[STMicroelectronics]
Part No. STTH1502FP STW34NB2004 W34NB20 STW34NB20 STW34NB20_04
OCR Text ID 34 A STW34NB20 Figure 1. Package FEATURES SUMMARY TYPICAL RDS(on) = 0.062 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED TO-247 1 3 2 DESCRIPTION Using ...
Description N-CHANNEL 200V - 0.062 OHM - 34A TO-247 PowerMESH MOSFET

File Size 226.68K  /  10 Page

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    IRF[International Rectifier]
Part No. IRLR3705ZPBF IRLU3705ZPBF
OCR Text ...riety of other applications. ID = 42A D-Pak IRLR3705Z Max. 89 63 42 360 130 0.88 16 I-Pak IRLU3705Z Units A Absolute Maximu...34A e = 21A e VDS = 55V, VGS = 0V, TJ = 125C VGS = 16V VGS = -16V ID = 42A VDS = 44V VGS = 5.0V V...
Description AUTOMOTIVE MOSFET HEXFET Power MOSFET

File Size 346.86K  /  11 Page

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    2SK3874-01R

Fuji Electric
Part No. 2SK3874-01R
OCR Text ...100 7v 20v 10v 8v 6.5v vgs=6.0v id [a] vds [v] typical output characteristics id=f(vds):80 s pulse test,tch=25 c 012345678910 0.1 1 10 1...34a i as =56a eav [mj] starting tch [ c] maximum avalanche energy vs. starting tch e(av)=f(starti...
Description N-CHANNEL SILICON POWER MOSFET

File Size 109.14K  /  4 Page

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    2SK3873-01

Fuji Electric
Part No. 2SK3873-01
OCR Text ...100 7v 20v 10v 8v 6.5v vgs=6.0v id [a] vds [v] typical output characteristics id=f(vds):80 s pulse test,tch=25 c 012345678910 0.1 1 10 1...34a i as =56a eav [mj] starting tch [ c] maximum avalanche energy vs. starting tch e(av)=f(starti...
Description N-CHANNEL SILICON POWER MOSFET

File Size 112.05K  /  4 Page

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    IRHNA7Z60 IRHNA8Z60

International Rectifier
Part No. IRHNA7Z60 IRHNA8Z60
OCR Text ...S 30V 30V RDS(on) 0.009W 0.009W ID 75*A 75*A Features: n n n n n n n n n n n n n Radiation Hardened up to 1 x 106 Rads (Si) Single Ev...34A 47A 75A VD S L D R IVE R 900 RG D .U .T IA S + - VD D A 600 12V 2...
Description 30Volt, 0.009Ω, RAD HARD HEXFET(30V, 0.009Ω,抗辐射N沟道HEXFET晶体

File Size 127.16K  /  8 Page

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For id-34a Found Datasheets File :: 241    Search Time::0.969ms    
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