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  id-5.6a Datasheet PDF File

For id-5.6a Found Datasheets File :: 3751    Search Time::0.984ms    
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    SPD07N60S5 SPU07N60S5

INFINEON[Infineon Technologies AG]
Part No. SPD07N60S5 SPU07N60S5
OCR Text ...O-251 and TO-252 VDS RDS(on) ID P-TO252. 2 3 1 600 0.6 7.3 P-TO251. V A * Ultra low gate charge * Periodic avalanche rated *...5 7.3 20 30 mJ Avalanche energy, repetitive tAR limited by Tjmax1) EAR I D = 7.3 A, VDD = 50...
Description for lowest Conduction Losses
Cool MOS Power Transistor
Cool MOS⑩ Power Transistor

File Size 259.07K  /  11 Page

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    2SK2099-01L 2SK2099-01S

Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
Part No. 2SK2099-01L 2SK2099-01S
OCR Text ...erature Range Symbol V DS V DGR ID I D(puls) V GS PD T ch T stg Rating 250 250 6 24 30 20 150 -55 ~ +150 Unit V V A A V W C C > Equivalen...5 Typ. 3,0 10 0,2 10 0,6 3,0 400 75 20 20 20 40 10 Max. 3,5 500 1,0 100 0,85 600 110 30 30 30 ...
Description N-channel MOS-FET 6 A, 250 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 214.11K  /  2 Page

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    BUZ906P BUZ905P

Magnatec
ETC[ETC]
List of Unclassifed Manufacturers
Part No. BUZ906P BUZ905P
OCR Text ...DSX Drain - Source Voltage VGSS ID ID(PK) PD Tstg Tj RJC Gate - Source Voltage Continuous Drain Current Body Drain Diode Total Power Dissipa...5 -12 -10 V V mA -10 2 S DYNAMIC CHARACTERISTICS (Tcase = 25C unless otherwise stated) Cha...
Description P-CHANNEL POWER MOSFET

File Size 37.00K  /  3 Page

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    FDFS6N303

FAIRCHILD[Fairchild Semiconductor]
Part No. FDFS6N303
OCR Text ...d FDFS6N303 Units VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for ...5 V, I D = 4.8 A VDS = 10 V, ID = 6 A VGS = 10 V, VDS = 5 V VDS = 15 V, VGS = 0 V, f = 1.0 MHz VDS =...
Description N-Channel MOSFET with Schottky Diode

File Size 94.24K  /  5 Page

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    FQA13N80

FAIRCHILD[Fairchild Semiconductor]
Part No. FQA13N80
OCR Text ...te Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25C unless otherwise noted Parameter Drain-Source Vo...5 seconds Thermal Characteristics Symbol RJC RCS RJA Parameter Thermal Resistance, Junction-to-C...
Description 800V N-Channel MOSFET

File Size 730.26K  /  8 Page

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    FQAF13N80

FAIRCHILD[Fairchild Semiconductor]
Part No. FQAF13N80
OCR Text ...te Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25C unless otherwise noted Parameter Drain-Source Vo...5.1 32 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/C C C Gate-So...
Description 800V N-Channel MOSFET

File Size 714.82K  /  8 Page

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    HBCC-1590 HBCC-1570 HBCC-1580

Molex, Inc.
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
Part No. HBCC-1590 HBCC-1570 HBCC-1580
OCR Text ...CC-1580 Symbol Ipr <Q> Z Vf BVR Id Cd Ke d 0.82 4.11 (0.162) 1.5 5.0 - - - - - Min. Typ. (see Bin Table) 0.95 4.27 (0.168) 1.75 - 60 100 60 650 -0.006 0.268 (0.0106) 1.0 4.42 (0.174) 2.0 - 1000 - - 670 - - Max. Units nA - mm (in.) V V pA p...
Description Optical Reflective Sensors 光反射传感器
50/125 PVC MTRJ-SC 2M DUPLEX ASSEM

File Size 144.93K  /  8 Page

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    IRF640N IRF640NL IRF640NS

IRF[International Rectifier]
Part No. IRF640N IRF640NL IRF640NS
OCR Text ...= 200V RDS(on) = 0.15 G S ID = 18A TO-220AB IRF640N D2Pak IRF640NS TO-262 IRF640NL Absolute Maximum Ratings ID @ TC = 25C...5.5 4.5 7.5 1160 185 53 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C,...
Description Power MOSFET(Vdss=200V/ Rds(on)=0.15ohm/ Id=18A)
Power MOSFET(Vdss=200V, Rds(on)=0.15ohm, Id=18A)

File Size 153.14K  /  11 Page

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    MCH3408

Sanyo Semicon Device
Part No. MCH3408
OCR Text ...ge Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (900mm2!0.8mm) Conditions 0.85 1 : G...5.6 0.8 150 --55 to +150 Unit V V A A W C C Electrical Characteristics at Ta=25C Parameter Dr...
Description N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications

File Size 27.11K  /  4 Page

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    FDW2501NZ

FAIRCHILD[Fairchild Semiconductor]
Part No. FDW2501NZ
OCR Text ...um Ratings Symbol V DSS V GSS ID PD TJ , TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipati...5 V, ID = 6.0 A V GS = 2.5 V, ID = 4.7 A V GS = 4.5 V, ID = 6.0A, TJ =125C V GS = 4.5 V, V DS = 5 V,...
Description Dual N-Channel 2.5V Specified PowerTrench MOSFET

File Size 91.09K  /  6 Page

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