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Eon Silicon Solution
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| Part No. |
29F512
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| OCR Text |
... ? 0.23 m triple-metal double-poly triple-well cmos flash technology ? low vcc write inhibit < 3.2v ? 100k endurance ...silicon solution, inc., www.essi.com.tw or modifications due to changes in technical specifications... |
| Description |
Search --To EN29F512
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| File Size |
471.32K /
35 Page |
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it Online |
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Fujitsu Limited
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| Part No. |
CS200
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| OCR Text |
...nm 1.7nm gate electrode nisi / poly-si cosi2 / poly-si source / drain electrode nisi cosi2 interconnects 11-cu + 1-al |
| Description |
65nm CMOS Technology
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| File Size |
603.40K /
2 Page |
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it Online |
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Memsic
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| Part No. |
MXA2500J MXA2500K
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| OCR Text |
...cavity. Equally spaced aluminum/poly-silicon thermopiles (groups of thermocouples) are located equidistantly on all four sides of the heat source (dual axis). Under zero acceleration, a temperature gradient is symmetrical about the heat sou... |
| Description |
Dual Axis Accelerometer
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| File Size |
143.35K /
8 Page |
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it Online |
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ST Microelectronics
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| Part No. |
LIS3L02AS4
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| OCR Text |
...rocess called THELMA (Thick Epi-Poly Layer for Microactuators and Accelerometers) developed by ST to produce inertial sensors and actuators in silicon. The IC interface instead is manufactured using a CMOS process that allows high level of ... |
| Description |
INERTIAL SENSOR: 3Axis - 2g/6g LINEAR ACCELEROMETER
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| File Size |
457.69K /
8 Page |
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it Online |
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