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  rbe Datasheet PDF File

For rbe Found Datasheets File :: 5209    Search Time::2.047ms    
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    BFQ162

NXP Semiconductors
Philips Semiconductors
Part No. BFQ162
OCR Text ...NDITIONS open emitter open base rbe = 100 open collector - - - - - - -65 - MIN. MAX. 20 10 19 3 500 3 +175 175 V V V V mA W C C UNIT PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation ...
Description NPN VIDEO TRANSISTOR

File Size 62.69K  /  8 Page

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    BFQ166

NXP Semiconductors
Philips Semiconductors
Part No. BFQ166
OCR Text ...ee Fig.3 open emitter open base rbe = 100 open collector CONDITIONS MIN. - - - - - - -65 - PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain transition frequency Ts 1...
Description NPN VIDEO TRANSISTOR

File Size 65.35K  /  8 Page

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    4N38300 4N38300W H11D4S

Fairchild Semiconductor
Part No. 4N38300 4N38300W H11D4S
OCR Text ...e Current Collector to Emitter (rbe = 1 M") (TA = 25C Unless otherwise specified.) INDIVIDUAL COMPONENT CHARACTERISTICS Test Conditions (IF = 10 mA) Symbol VF !VF !TA BVR CJ IR BVCER BVCEO BVCBO BVEBO BVECO Device ALL ALL ALL ALL ALL...
Description 6-pin DIP High Voltage Phototransistor Output Optocoupler

File Size 382.63K  /  9 Page

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    Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
Part No. BF723 BF721 Q62702-F1309 Q62702-F1239
OCR Text ...er breakdown voltage IC = 10 A, rbe = 2.7 k BF 721 Collector-base breakdown voltage IC = 10 A, IB = 0 BF 721 BF 723 Emitter-base breakdown voltage IE = 10 A, IC = 0 Collector-base cutoff current VCB = 200 V, IE = 0 Collector-emitter cutoff ...
Description From old datasheet system
PNP Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage) 进步党硅高压晶体管在电视机的视频输出级(适合开关电源和高击穿电压)

File Size 130.02K  /  4 Page

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    MJ1101201 MJ11016 MJ11012 MJ11015 MJ11012-D

ONSEMI[ON Semiconductor]
Part No. MJ1101201 MJ11016 MJ11012 MJ11015 MJ11012-D
OCR Text ... Leakage Current (VCE = 60 Vdc, rbe = 1k ohm) (VCE = 120 Vdc, rbe = 1k ohm) (VCE = 60 Vdc, rbe = 1k ohm, TC = 150_C) (VCE = 120 Vdc, rbe = 1k ohm, TC = 150_C) Collector-Emitter Breakdown Voltage(1) (IC = 100 mAdc, IB = 0) Characterist...
Description HIGH-CURRENT COMPLEMENTARY SILICON TRANSISTORS

File Size 64.96K  /  4 Page

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    MOC205-M MOC207-M

Fairchild Semiconductor
Part No. MOC205-M MOC207-M
OCR Text ...0 0.9 VCE=10V Fig. 6 CTR vs. rbe (Unsaturated) I CEO - COLLECTOR -EMITTER DARK CURRENT (nA) IF = 20mA 0.8 0.7 0.6 0.5 1000 IF = 10mA 100 NORMALIZED CTR IF = 5mA 0.4 0.3 0.2 10 1 0.1 0.0 10 VCE = 5V, TA ...
Description (MOC205-M - MOC208-M) SMALL OUTLINE OPTOCOUPLERS TRANSISTOR OUTPUT

File Size 536.89K  /  10 Page

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    BU2507DF

NXP
PHILIPS[Philips Semiconductors]
Part No. BU2507DF
OCR Text ...URATION case SYMBOL c b rbe case isolated 1 2 3 e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER...
Description Silicon Diffused Power Transistor

File Size 54.79K  /  6 Page

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    SavantIC
Part No. 2SA743 2SA743A
OCR Text ...fied PARAMETER 2SA743 IC=-10mA ;rbe=; 2SA743A 2SA743 IC=-1mA ;IE=0 2SA743A IE=-1mA ;IC=0 IC=-1A ;IB=-0.1A IC=-50mA ; VCE=-4V 2SA743 2SA743A VCE=-50V; rbe=1k< VCE=-80V; rbe=1k< IC=-50mA ; VCE=-4V IC=-1A ; VCE=-4V IC=-30mA ; VCE=-4V CONDITION...
Description Silicon POwer Transistors

File Size 171.21K  /  4 Page

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    KSC2752 KSC2752OS KSC2752OSTU

FAIRCHILD[Fairchild Semiconductor]
Part No. KSC2752 KSC2752OS KSC2752OSTU
OCR Text ... VCB = 400V, IE = 0 VCE = 400V, rbe = 51, TC= 125C VCE = 400V, rbe(off) = -1.5V VCE = 400V, rbe(off) = -1.5V @ TC= 125C VEB = 5V, IC = 0 VCE = 5V, IC = 0.05A VCE = 5V, IC = 0.3A IC = 0.3A, IB = 0.06A IC = 0.3A, IB = 0.06A VCC = 150V, IC = 0...
Description NPN Epitaxial Silicon Transistor
High Speed High Voltage Swiching Industrial Use

File Size 55.88K  /  5 Page

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    LTE42005S

NXP Semiconductors
Philips Semiconductors
Part No. LTE42005S
OCR Text ...b 75 C CONDITIONS open emitter rbe = 100 open base open collector - - - - - - -65 - at 0.3 mm from case; t = 10 s - MIN. LTE42005S MAX. 40 35 16 3 250 4 +200 200 235 V V V V UNIT mA W C C C 103 handbook, halfpage IC (mA) (...
Description NPN MICROWAVE POWER TRANSISTOR

File Size 52.83K  /  10 Page

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