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rg-180 u Datasheet PDF File

For rg-180 u Found Datasheets File :: 4053 Search Time::1.328ms
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				FAIRCHILD[Fairchild Semiconductor]
Part No.	SSH7N60 SSH7N60B
OCR Text	... 5) VDD = 300 V, ID = 7.0 A, RG = 25 (Note 4, 5) -------- 30 80 125 85 38 6.4 15 70 170 260 180 50 --- ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Maximum Continuous Dr...
Description	600V N-Channel MOSFET
File Size	648.38K / 8 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor] ETC
Part No.	SSI7N60B SSW7N60 SSW7N60B SSW7N60B_SSI7N60B
OCR Text	... 5) VDD = 300 V, ID = 7.0 A, RG = 25 (Note 4, 5) -------- 30 80 125 85 38 6.4 15 70 170 260 180 50 --- ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Maximum Continuous Dr...
Description	600V N-Channel MOSFET From old datasheet system
File Size	653.59K / 9 Page	View it Online	Download Datasheet

				AD[Analog Devices]
Part No.	SSM2019 SSM2019BN SSM2019BRN SSM2019BRNRL SSM2019BRW SSM2019BRWRL
OCR Text	...racy VO VOOS ISC 13.5 RG = 10 kW G-1 TA = 25C RG = 10 W, G = 1000 RG = 101 W, G = 100 RG = 1.1 kW, G = 10 RG = , G = 1 0....180 VS = 15V TA = 25 C 160 140 G = 1000 G = 100 G = 10 G=1 150 G = 1000 125 G = 10 100 +PSRR - d...
Description	Self-Contained Audio Preamplifier
File Size	254.71K / 8 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor] Samsung semiconductor
Part No.	SSP7N60 SSP7N60B SSS7N60B
OCR Text	... 5) VDD = 300 V, ID = 7.0 A, RG = 25 (Note 4, 5) -------- 30 80 125 85 38 6.4 15 70 170 260 180 50 --- ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Maximum Continuous Dr...
Description	600V N-Channel MOSFET
File Size	912.76K / 11 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5018BFLL APT5018SFLL
OCR Text	...ID [Cont.] @ 25C VDD = 0.5 VDSS RG = 0.6W ID = ID [Cont.] @ 25C MIN TYP 2 ns MAX uNIT Amps Volts V/ns ns 27 108 1.3 5 250 500 (VGS = 0V, IS = -ID [Cont.]) dv/ dt Tj = 25C Tj = 25C Tj = 125C 1.6 6.0 13 21 Tj...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
File Size	53.84K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5024AVR
OCR Text	...= 0.5 VDSS ID = ID[Cont.] @ 25C RG = 1.6 MIN TYP MAX uNIT 3600 470 180 140 22 65 11 10 50 7 4320 660 270 210 35 95 22 20 75 14 ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay T...
Description	POWER MOS V 500V 18.5A 0.240 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	60.55K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology Ltd.
Part No.	APT5024BVFR
OCR Text	... 0.5 VDSS ID = ID [Cont.] @ 25C RG = 1.6 MIN TYP MAX uNIT pF 3600 470 180 140 22 65 11 10 50 7 4320 660 270 210 35 95 22 20 75 14 ns nC Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay T...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 500V 22A 0.240 Ohm
File Size	61.69K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5024BVR
OCR Text	...= 0.5 VDSS ID = ID[Cont.] @ 25C RG = 1.6 MIN TYP MAX uNIT 3600 470 180 140 22 65 11 10 50 7 4320 660 270 210 35 95 22 20 75 14 ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay T...
Description	POWER MOS V 500V 22A 0.240 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	59.21K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5026HVR
OCR Text	...= 0.5 VDSS ID = ID[Cont.] @ 25C RG = 1.6 MIN TYP MAX uNIT 3600 470 180 140 22 65 11 10 50 7 4320 660 270 210 35 95 22 20 75 14 ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay T...
Description	POWER MOS V 500V 18.5A 0.260 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	59.64K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8018 APT8018L2VR APT8018JN
OCR Text	... DV NF A I 230 VDD = 0.5 VDSS RG = 0.6W ID = ID[Cont.] @ 25C MIN TYP (Body Diode) (Body Diode) 2 ns MAX uNIT Amps Volts ns C 43 172 1.3 (VGS = 0V, IS = -ID[Cont.]) 930 29 Reverse Recovery Charge (IS = -ID[Cont.], dl ...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	58.92K / 2 Page	View it Online	Download Datasheet

For rg-180 u Found Datasheets File :: 4053 Search Time::1.328ms
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