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OKI SEMICONDUCTOR CO., LTD.
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| Part No. |
MSM54C864-80ZS MSM54C864-80JS MSM54C864-10ZS
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| OCR Text |
...ns 20 0 10 0 10 0 ns 10 10 10 t rwd t cwd t dzc t dzo t csr t ref t wsr max. min. max. min. max. min. -10 -80 -70 ns 130 100 100 ms 4 4 4 0 0 0 t awd ns 80 65 65 ns 25 20 20 t oea ns 20 10 10 ns 10 10 10 t chr ns 0 0 0 t rpc t oez t oeh ... |
| Description |
65,536-Word X 8-Bit Multiport DRAM 65,536字8位多端口内存
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| File Size |
365.43K /
33 Page |
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it Online |
Download Datasheet
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
KMM366F883BK2 KMM366F803BK2
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| OCR Text |
...8 ns 7 ras to w dealy time t rwd 70 84 ns 7,13 ac characteristics (0 c t a 70 c, v cc =3.3v 0.3v. see notes 1,2.)
dram module kmm366f80(8)3bk2 ac characteristics (0 c t a 70 c , v cc =3.3v 0.3v. see notes 1,2.) parameter sy... |
| Description |
8M x 64 DRAM DIMM(8M x 64 动RAM模块)
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| File Size |
416.71K /
20 Page |
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it Online |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
KMM366F884BS1
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| OCR Text |
... 7, 15 ras to w dealy time t rwd 70 84 ns 7
dram module kmm366f80(8)4bs1 ac characteristics (0 c t a 70 c, v cc =3.3v 0.3v. see notes 1,2.) test condition : v ih /v il =2.2/0.7v, v oh /v ol =2.0/0.8v, output loading c l =100pf p... |
| Description |
8M x 64 DRAM DIMM(8M x 64 动RAM模块)
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| File Size |
420.69K /
20 Page |
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it Online |
Download Datasheet |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
M466F0804DT1-L
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| OCR Text |
...s 6,14 ras to w dealy time t rwd 70 84 ns 6
dram module m466f0804dt1-l rev. 0.1 oct. 2000 test condition : v ih /v il =2.2/0.7v, v oh /v ol =2.0/0.8v, output loading cl=100pf parameter symbol -50 -60 unit note min max min max column... |
| Description |
8M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh
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| File Size |
300.63K /
20 Page |
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it Online |
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