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Cypress Semiconductor, Corp.
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| Part No. |
CY7C1163V18-400BZC
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| OCR Text |
...ites are conducted with on-chip synchron ous self-timed write circuitry. selection guide description 400 mhz 375 mhz 333 mhz 300 mhz unit maximum operating frequency 400 375 333 300 mhz maximum operating current 1080 1020 920 850 ma note ... |
| Description |
18-Mbit QDR™-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 1M X 18 QDR SRAM, 0.45 ns, PBGA165
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| File Size |
461.23K /
29 Page |
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it Online |
Download Datasheet
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Cypress Semiconductor, Corp.
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| Part No. |
CY7C1550KV18-450BZC CY7C1550KV18-400BZC CY7C1548KV18-400BZC
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| OCR Text |
...ites are conducted with on-chip synchron ous self-timed write circuitry. note 1. the cypress qdr ii+ devices surpass the qd r consortium specific ation and can support v ddq = 1.4 v to v dd . [+] feedback
cy7c1546kv18, cy7c1557kv18 cy7c... |
| Description |
Sync SRAM; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 2M X 36 DDR SRAM, 0.45 ns, PBGA165
72-Mbit DDR II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
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| File Size |
657.16K /
31 Page |
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it Online |
Download Datasheet |
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