| Description |
From old datasheet system
1K (64 x 16 or 128 x 8) SERIAL MICROWIRE EEPROM
moSFET; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:3.4A; On-Resistance, Rds(on):0.085ohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process Compatible:Yes; mounting Type:Surface mount; Package/Case:6-tsop RoHS Compliant: Yes
moSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-12V; Continuous Drain Current, Id:-4.5A; On-Resistance, Rds(on):0.04ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:6-tsop; Leaded Process Compatible:No
moSFET, P tsop-6moSFET, P tsop-6; Transistor type:moSFET; Transistor polarity:P; Voltage, Vds max:12V; Case style:tsop-6; Current, Id cont:4.5A; Current, Idm pulse:20A; Power, Pd:1.1W; Resistance, Rds on:0.04R; SMD:1; Charge, Qrr typ
Circular Connector; No. of Contacts:13; series:JT02R; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:10; Circular Contact Gender:Pin; Circular Shell Style:Box mount Receptacle; Insert Arrangement:10-13
Circular Connector; No. of Contacts:13; series:JT02R; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:10; Circular Contact Gender:Socket; Circular Shell Style:Box mount Receptacle; Insert Arrangement:10-13
1K 64 x 16 or 128 x 8 SERIAL MICROWIRE EEPROM 000 64 x 1628 × 8 MICROWIRE的串行EEPROM
1K 64 x 16 or 128 x 8 SERIAL MICROWIRE EEPROM 000 64 x 16128 × 8 MICROWIRE的串行EEPROM
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