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typ.collector-base Datasheet PDF File

For typ.collector-base Found Datasheets File :: 41226 Search Time::1.453ms
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				Rohm
Part No.	2SC582411
OCR Text	... 1) high speed switching. (tf : typ. : 30ns at i c = 3a) 2) low saturation voltage, typically (typ. : 200mv at i c = 2a, i...collector-base voltage collector-emitter voltage emitter-base voltage collector current power dissip...
Description	Power transistor (60V, 3A)
File Size	931.04K / 4 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	2SC3355 2SC3355-T
OCR Text	...noise and high gain nf = 1.1 db typ., g a = 8.0 db typ. @ v ce = 10 v, i c = 7 ma, f = 1 ghz nf = 1.8 db typ., g a = 9.0 db typ. @ v ce ...collector to base voltage v cbo 20 v collector to emitter voltage v ceo 12 v emitter to base voltage...
Description	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
File Size	238.56K / 10 Page	View it Online	Download Datasheet

				AUK corp
Part No.	STN3904
OCR Text	... 2.060.1 14.00.40 1.27 Typ. 2.54 Typ. 123 PIN Connections 1. Emitter 2. Base 3. Collector 1.200.1 0.38 KST-9030-000 1 STN3904 Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter ...
Description	NPN Silicon Transistor
File Size	83.70K / 3 Page	View it Online	Download Datasheet

				Solid States Devices, Inc
Part No.	TR0097B
OCR Text	...o ambient r jc r ja 11.67 (typ 8) 175 oc/w note1: derated 85.7 mw/c above tc= 25c note2: derated 5.7 mw/c above ta= 25c .065 .010 ...collector ? emitter sustaining voltage i c = 30 ma bv ceo(sus) 80 95 - v collector ? base bre...
Description	2 A, 150 Volts general purpose NPN Transistor
File Size	84.73K / 2 Page	View it Online	Download Datasheet

				KODENSHI KOREA CORP.
Part No.	SUM202MN
OCR Text	...source drain bv dss r ds(on) typ. i d max -20v 48m ? @ vgs=-4.5v -5.3a 65m ? @ vgs=-2.5v mosfet bv ceo bv ebo . i c max ...collector-base voltage v cbo -15 v collector-emitter voltage v ceo -12 v emitter-base voltage ...
Description	Integrated Power MOSFET with PNP Low VCE(sat) Switching Transistor
File Size	373.88K / 9 Page	View it Online	Download Datasheet

				Hitachi Semiconductor
Part No.	2SC5246
OCR Text	...n bandwidth product fT = 12 GHz typ * High gain, low noise figure PG = 16.5 dB typ, NF = 1.6 dB typ at f = 900 MHz Outline SMPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC5246 Absolute Maximum Ratings (Ta = 25C) Item Collector...
Description	Silicon NPN Epitaxial
File Size	63.60K / 10 Page	View it Online	Download Datasheet

				NEC Corp.
Part No.	2SC5193 2SC5193-T1 2SC5193-T2
OCR Text	...tortion * Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz * Large Absolute Maximum Collector Current IC = 100 mA PACKAGE DRAWING (Units: mm) 2.10.1 1.250.1 0.3 -0 0.65 0...
Description	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD
File Size	63.06K / 12 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SB1012 2SB1012K 2SB1012_K
OCR Text	...er 2. Collector 3. Base ID 5 k (Typ) 1 k (Typ) 1 1 2 3 2SB1012(K) Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current...
Description	Silicon PNP Epitaxial
File Size	32.59K / 6 Page	View it Online	Download Datasheet

				New Jersey Semi-Conductor Products, Inc. New Jersey Semi-Conductor P... New Jersey Semiconductors New Jersey Semi-Conduct...
Part No.	BC320 BC321 BC258 BC177 BC177V 3C307 3C309 BC307
OCR Text	...t)* -vbb * -vbe * ft cob nf min typ max note 1 1 15 4 30 15 0.1 0.3 0.25 0.3 0.6 0.72 0.92 0.6 0.65 0.75' 0.7 0.77 180 3.6 7 j.2 6 3-2 6 3-2...collector current 100 vbe and vce(sat) vs collector current ...
Description	THE ABOVE TYPES ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS Trans GP BJT PNP 45V 0.1A 3-Pin TO-18
File Size	160.64K / 3 Page	View it Online	Download Datasheet

				Dc Components
Part No.	LB122T
OCR Text	...) characteristic symbol min typ max unit test conditions collector-base breakdown voltage bvcbo 600 - - v ic=100ma collector-emitter breakdown voltage bvceo 400 - - v ic=10ma emitter-base breakdown voltage bvebo 6 - -...
Description	TECHNICAL SPECIFICATIONS OF NPN TRIPLE DIFFUSED PLANAR TRANSISTOR
File Size	218.30K / 1 Page	View it Online	Download Datasheet

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