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NEC[NEC]
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| Part No. |
1SS304
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| OCR Text |
... Forward Voltage SYMBOL VF1 VF2 vf3 Reverse Current Capacitance Reverse Recovery Time IR Ct trr TEST CONDITIONS IF = 10 mA IF = 50 mA IF = 100 mA VR = 50 V VR = 0 V, f = 1.0 MHz See Test Circuit. 1.1 MIN. TYP. 0.67 0.75 0.85 MAX. 1.0 1.1 1.... |
| Description |
SILICON SWITCHING DIODES
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| File Size |
53.55K /
4 Page |
 View
it Online |
Download Datasheet
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JIANGSU[Jiangsu Changjiang Electronics]
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| Part No. |
1SS404
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| OCR Text |
... Symbol VF1 Forward voltage VF2 vf3 Reverse current Capacitance between terminals IR CT 46 Min. Typ. 0.16 0.22 0.38 0.45 50 Max. Unit V V V A pF Conditions IF=1mA IF=10mA IF=300mA VR=20V VR=0V, f=1MHZ
Typical Characteristics
1SS404
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| Description |
High Speed SWITCHING Diodes
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| File Size |
55.62K /
2 Page |
View
it Online |
Download Datasheet |
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RENESAS[Renesas Electronics Corporation]
Renesas Electronics Corporation.
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| Part No. |
HRV103A
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| OCR Text |
...tance Thermal resistance
VF2 vf3 IR1 IR2 C
Rth(j-a)
Notes: 1. Ceramics board
2.0
0.5
2.0 0.3 2.0
50hx50wx0.8t
Unit: mm
1.0
2. Glass epoxy board
6.0
0.5
6.0 0.3 2.0
50hx50wx0.8t
Unit: mm
1.0
3. TURP i... |
| Description |
Diodes>Switching
Silicon Schottky Barrier Diode for Rectifying
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| File Size |
86.59K /
6 Page |
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it Online |
Download Datasheet |
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RENESAS[Renesas Electronics Corporation]
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| Part No. |
HRV103B
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| OCR Text |
...
(Ta = 25C)
*-U *"d L* VF1 VF2 vf3 *\ *\ *\ *\ *\ *\ *y'*z 1. Z~bNSi"A
2.0
Min *\ *\ *\
Typ *\ *\ *\ *\ *\ 100 200
Max 0.35 0.45 0.50 10 100 40 *\ *\
'PE V IF = 100mA IF = 700mA IF = 1A A pF C/W VR = 5V VR = 30V
`'e*OE
t... |
| Description |
HRV103B
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| File Size |
139.17K /
6 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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