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  vhf to uhf b high-frequency sw Datasheet PDF File

For vhf to uhf b high-frequency sw Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | <10> | 11 | 12 | 13 | 14 | 15 |   

    STTH30R03 7630 STTH30R03CG STTH30R03CW STTH30R03CG-TR

ST Microelectronics<br>STMICROELECTRONICS[STMicroelectronics]<br>意法半导<br>
Part No. STTH30R03 7630 STTH30R03CG STTH30R03CW STTH30R03CG-TR
Description HIGH FREQUENCY SECONDARY RECTIFIER<br>From old datasheet system<br>HIGH FREQUENCY SECONDARY RECTIFIER 高频二次整流<br>
File Size 77.56K  /  6 Page

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    UPB1005GS UPB1005GS-E1 UPB1003GS UPB1004GS UPC2753GR UPC2756T UPC2756TB

NEC[NEC]<br>
Part No. UPb1005GS UPb1005GS-E1 UPb1003GS UPb1004GS UPC2753GR UPC2756T UPC2756Tb
Description REFERENCE FREQUENCY 16.368 MHz, 2ND IF FREQUENCY 4.092 MHz RF/IF FREQUENCY DOWN-CONVERTER PLL FREQUENCY SYNTHESIZER IC FOR GPS RECEIVER<br>
File Size 161.58K  /  20 Page

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    2SC3803 E000885

toshiba Corporation<br>toSHIbA[toshiba Semiconductor]<br>
Part No. 2SC3803 E000885
Description NPN EPITAXIAL TYPE (HIGH FREQUENCY / VIDEO AMPLIFIER/ HIGH SPEED swITCHING APPLICATIONS)<br>NPN EPITAXIAL TYPE (HIGH FREQUENCY , VIDEO AMPLIFIER, HIGH SPEED swITCHING APPLICATIONS)<br>HIGH FREQUENCY AMPLIFIER APPLICATIONS VODEO AMPLIFIER APPLICATIONS HIGH SPEED swITCHING APPLICATIONS<br>From old datasheet system<br>
File Size 174.72K  /  3 Page

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    DPPS16D56K-F DPPS10D12K-F DPPS10D15K-F DPPS10D18K-F DPPS10D1K-F DPPS10D22K-F DPPS10D27K-F DPPS10D33K-F DPPS10D39K-F DPPS

Cornell Dubilier Electr...<br>http://<br>Cornell Dubilier Electronics<br>
Part No. DPPS16D56K-F DPPS10D12K-F DPPS10D15K-F DPPS10D18K-F DPPS10D1K-F DPPS10D22K-F DPPS10D27K-F DPPS10D33K-F DPPS10D39K-F DPPS10D47K-F DPPS10D56K-F DPPS10D68K-F DPPS10D82K-F DPPS10S12K-F DPPS10S15K-F DPPS10S18K-F DPPS10S1K-F DPPS10S22K-F DPPS10S27K-F DPPS10S33K-F DPPS16D12K-F DPPS16D15K-F DPPS16D18K-F DPPS16D1K-F DPPS16D22K-F DPPS16S18K-F DPPS16D82K-F DPPS20D82K-F DPPS20D12K-F DPPS20S12K-F DPPS16D27K-F DPPS16D33K-F DPPS16D39K-F DPPS16D47K-F DPPS20D68K-F DPPS20D39K-F DPPS20S15K-F DPPS20S1K-F
Description High Voltage, High Frequency, Ultra High Peak Currents<br>
File Size 214.93K  /  2 Page

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    2SA1683 2SC4414

SANYO[Sanyo Semicon Device]<br>
Part No. 2SA1683 2SC4414
Description high-frequency General-Purpose Amp/ high-frequency Power Amp Applications<br>high-frequency General-Purpose Amp, high-frequency Power Amp Applications<br>
File Size 115.49K  /  4 Page

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    ADP3806 ADP3806JRU ADP3806JRU-125 ADP3806JRU-126 ADP3806JRU-12.5 ADP3806JRU-12.6

AD[Analog Devices]<br>ANALOG DEVICES INC<br>
Part No. ADP3806 ADP3806JRU ADP3806JRU-125 ADP3806JRU-126 ADP3806JRU-12.5 ADP3806JRU-12.6
Description 0.3-25V; high frequency switch mode Li-Ion battery charger. For portable computers, fast chargers<br>Analog IC<br>high-frequency switch Mode Li-Ion battery Charger<br>2-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO24<br>
File Size 195.96K  /  12 Page

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    CREE POWER<br>
Part No. W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
Description Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition<br>Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition<br>Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition<br>Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition<br>Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition<br>Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition<br>Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition<br>Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition<br>
File Size 273.34K  /  17 Page

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    2SK436

Sanyo Semicon Device<br>Renesas Electronics Corporation<br>
Part No. 2SK436
Description high-frequency/Low-Frequency General-Purpose Amp Applications<br>high-frequency,Low-Frequency General-Purpose Amp Applications<br>
File Size 162.40K  /  6 Page

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    2SC4215 E000919

toshiba Semiconductor<br>
Part No. 2SC4215 E000919
Description NPN EPITAXIAL PLANAR TYPE (HIGH FREQUENCY FM/ RF/ MIX/ IF AMPLIFIERAPPLICATIONS)<br>HIGH FREQUENCY AMPLIFIER APPLICATIONS FM, RF, MIX, IF AMPLIFIER APPLICATIONS<br>From old datasheet system<br>NPN EPITAXIAL PLANAR TYPE (HIGH FREQUENCY FM, RF, MIX, IF AMPLIFIERAPPLICATIONS)<br>
File Size 171.93K  /  4 Page

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    2SC5434 2SC5434-T1

NEC[NEC]<br>NEC Corp.<br>
Part No. 2SC5434 2SC5434-T1
Description Reduced noise high frequency amplification transistor<br>NPN EPITAXIAL SILICON TRANSIStoR FOR high-frequency LOW-NOISE AMPLIFICATION<br>High-Frequecy Low-Noise Amplifier NPN Transistor(高频低噪声放大器NPN晶体<br>
File Size 59.68K  /  8 Page

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For vhf to uhf b high-frequency sw Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | <10> | 11 | 12 | 13 | 14 | 15 |   

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