w / BR24C01AF-w / BR24C01AFJ-w / BR24C01AFV-w / BR24C02-w / BR24C02F-w /
Memory ICs
BR24C02FJ-w / BR24C02FV-w / BR24C04-w / BR24C04F-w...programmable.
I2C BUS is a registered trademark of Philips.
!Applications VCRs, TVs, printers, ...
Description
MOSFET N-CH 500V 36A TO-3P 兼容I2C总线串行EEPROM 5015 RR 3#12 6#16 SKT PLUG 兼容I2C总线串行EEPROM The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each MOSFET N-CH 600V 26A TO-268 D3 Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT02; Number of Contacts:8; Connector Shell Size:12; Connecting Termination:Solder; Circular Shell Style:Box Mount Receptacle I2C BUS compatible serial EEPROM
...t bit of the slave address (R / w ... READ / wRITE) is used to set the write or read mode as follows. R / w set to 0 ... write (Random read word address setting is also 0) R / w set to 1 ... Read
1010 A2 P1 P0 R/w
BR24C16 / F / FJ / FV ...
...ations
PIN ASSIGNMENT
GND 1-w NC VDD 1 2 3 4 8 7 6 5 RXD TXD POL VPP
* works
with all iButtons and MicroLAN-compatible 1-wire slav...programmable 1-wire timing and driver characteris* Smart protocol combines data and control informat...
Description
Serial 1.wire Line Driver Serial 1-wireTM Line Driver From old datasheet system
... to +70 -55 to +125 Unit V V mA w C C Note
Notes: 1. Respect to VSS. Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent damage. The device is not meant to be operated under conditio...
... to +85 -55 to +125 Unit V V mA w C C Note
Notes: 1. Respect to VSS. Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent damage. The device is not meant to be operated under conditio...
... to +70 -55 to +125 Unit V V mA w C C Note
Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent damage. The device is not meant to be operated under conditions outside the limits desc...
...e (per diode) Value 2.2 Units C/w
Electrical Characteristics (per diode)
Symbol VFM * Parameter Maximum Instantaneous Forward Voltage IF...programmable Active DroopTM DISCLAIMER
ImpliedDisconnectTM ISOPLANARTM LittleFETTM MicroFETTM Mic...
...e (per diode) Value 3.5 Units C/w
Electrical Characteristics (per diode)
Symbol VFM * Parameter Maximum Instantaneous Forward Voltage IF...programmable Active DroopTM DISCLAIMER
ImpliedDisconnectTM ISOPLANARTM LittleFETTM MicroFETTM Mic...
...DERING INFORMATION
Option S SD w 300 300w 3S 3SD Order Entry Identifier .S .SD .w .300 .300w .3S .3SD Description Surface Mount Lead Bend Surface Mount; Tape and Reel 0.4" Lead Spacing VDE 0884 VDE 0884, 0.4" Lead Spacing VDE 0884, Surface...
... 20 mw/MHz, (typ) Standby: 110 w (max) * On-chip latches: address, data, CE, OE, wE * Automatic byte write: 10 ms max * Automatic page write (64 bytes): 10 ms max * Ready/Busy (only the HN58C257A series) * Data polling and Toggle bit * Dat...
Description
256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A)