...sipation
PD Topr Tstg
*1
w C C
Operating ambient temperature Storage temperature
Note) For the precautions related to surge and latch-up, refer to "s Usage Notes". *1: Except for the operating ambient temperature and storage te...
...
RthJA RthJA RthJS RthJS
K/w
Junction ambient, BAS 125-04w...06w Junction - soldering point, BAS125w
Junction - soldering point, BAS125-04w...06w
1) Package mounted on alumina 15mm x 16.7mmm x 0.7mm
Semiconductor Group
1
...
Description
Preliminary data Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping application) 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE Preliminary data Silicon Schottky Diodes (For low-loss fast-recovery meter protection bias isolation and clamping application) From old datasheet system
...
Unit V mA mw C
725 565
K/w
1) 2) 3)
For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm x 16.7 mm x 0.7 mm. 450 mw per package.
Semiconductor Group
2
BAS 125 ...
Electrical Charac...
Description
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications) 2 ELEMENT, SILICON, SIGNAL DIODE Circular Connector; Series:MS3106R; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No Silicon Schottky Diodes (For low-loss fast-recovery meter protection bias isolation and clamping applications) From old datasheet system
...
RthJA RthJS
725 565
K/w
Junction - soldering point
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu Semiconductor Group Semiconductor Group 11
Jun-04-1998 1998-11-01
BAS 125-07w
Electrical Characteri...
Description
Silicon Schottky Diode (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications) 2 ELEMENT, SILICON, SIGNAL DIODE Silicon Schottky Diode (For low-loss fast-recovery meter protection bias isolation and clamping applications) From old datasheet system
...AS40-02V-GS18 or BAS40-02V-GS08 w Marking Remarks Tape and Reel
Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified Paramet...surge forward current Power dissipation Tamb = 25 C tp < 1 s, Tamb = 25 C Tamb = 25 C Test condition...
Description
Small Signal Schottky Diodes; Single;
Low Forward Voltage Drop;
Space Saving SOD-523 SMD Package; Schottky Diode in SOD-523
...
RthJA RthJS
345 275
K/w
Junction - soldering point
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu Semiconductor Group Semiconductor Group 11
Sep-09-1998 1998-11-01
BAS 40-07w
Electrical Characteristi...
Description
Silicon Schottky Diode Preliminary data (General-purpose diode for high-speed switching Circuit protection Voltage clamping) 2 ELEMENT, SILICON, SIGNAL DIODE From old datasheet system
...0 100 Unit V mA mA mw C C C C K/w
VR IF IFSM Ptot Top Tstg Tsol Tj Rth(j-c)
t 10 ms, duty cycle = 10%
Semiconductor Group
1
Draft A03 1998-04-01
BAS 40
Electrical Characteristics Table 2 Parameter Reverse current 1, VR...
Description
DIODE SCHOTTKY SOT-23 HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor General-purpose diodes for high-speed switching Circuit protection) 伊雷尔硅肖特基二极管(伊雷尔和微波半导体分立一般用于高速开关电路保护的目的,二极管
... + 150 - 55 ... + 150
C
K/w 345 515 275 375
Rth JS
1) 2)
For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm2 Cu.
Semiconductor Group
2
BAS 40 ...
Electr...
Description
Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping) 2 ELEMENT, SILICON, SIGNAL DIODE From old datasheet system