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  w-cdma n-cdma Datasheet PDF File

For w-cdma n-cdma Found Datasheets File :: 1961    Search Time::2.36ms    
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    MRF6S9060N MRF6S9060NBR1 MRF6S9060NR1

Freescale Semiconductor...
Freescale Semiconductor, Inc
Part No. MRF6S9060N MRF6S9060NBR1 MRF6S9060NR1
OCR Text ... LIFETIME BUY 880 MHz, 14 W AVG., 28 V SINGLE N - CDMA LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs CASE 1265- 09, STYLE 1 TO - 270 - 2 PLASTIC MRF6S9060NR1 CASE 1337 - 04, STYLE 1 TO - 272 - 2 PLASTIC MRF6S9060NBR1 Table 1...
Description RF Power Field Effect Transistors

File Size 701.73K  /  18 Page

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    RTP08016-10

RFHIC
Part No. RTP08016-10
OCR Text w w e e r r a a m m p p l l i i f f i i e e r r p p a a l l l l e e t t r r t t p p 0 0 8 8 0 0 1 1 6 6 - - 1 1 0 0 ? tel ...cdma,w-cdma repeater description the rtp08016-10 is designed for rf system application fr...
Description The RTP08016-10 is designed for RF system application frequencies from 860MHz to 890MHz, with high gain.

File Size 1,206.49K  /  6 Page

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    MOTOROLA[Motorola, Inc]
Part No. MWIC930R1 MWIC930 MWIC930GR1
OCR Text ...M, GSM EDGE, TDMA, N - CDMA and W - CDMA. Final Application * Typical Performance @ P1dB: VDD = 26 Volts, IDQ1 = 90 mA, IDQ2 = 240 mA, Pout = 30 Watts P1dB, Full Frequency Band (921 - 960 MHz) Power Gain -- 30 dB Power Added Efficiency -- 4...
Description RF LDMOS Wideband Integrated Power Amplifiers

File Size 370.24K  /  16 Page

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    MRF6S9060MBR1 MRF6S9060MR1

Freescale Semiconductor...
Freescale Semiconductor, Inc
Part No. MRF6S9060MBR1 MRF6S9060MR1
OCR Text ...3 - 65 to +150 200 Unit Vdc Vdc W W/C C C NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable pr...CDMA LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs Table 2. Thermal Characteristics Characteris...
Description RF Power Field Effect Transistors

File Size 622.45K  /  16 Page

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    Matsshita / Panasonic
Part No. AN6080FHN
OCR Text ... 0.500 Power dissipation PD (W) 0.400 Mounted on standard board (glass epoxy: 50 mm x 50 mm x t0.8 mm) Rth(j-a) = 171.2C/W 0.300 0.251 0.200 Independent IC without a heat shink Rth(j-a) = 397.4C/W 0.100 0.000 0 25 50 75 10...
Description ICs for Mobile Communication

File Size 144.18K  /  10 Page

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    panasonic
Part No. AN6080FHN
OCR Text ... 0.500 Power dissipation PD (W) 0.400 Mounted on standard board (glass epoxy: 50 mm x 50 mm x t0.8 mm) Rth(j-a) = 171.2C/W 0.300 0.251 0.200 Independent IC without a heat shink Rth(j-a) = 397.4C/W 0.100 0.000 0 25 50 75 10...
Description QFN016-P-0304A

File Size 163.09K  /  10 Page

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    飞思卡尔半导体(中国)有限公司
Part No. MRF6S18140HR3
OCR Text ...c e l l u l a r r a d i o a n d w l l applications. ? typical 2 - carrier n - cdma performance: v dd = 28 volts, i dq = 1200 ma, p out = 29 watts avg., full frequency band, is - 95 cdma (pilot, sync, paging, traffic codes 8 through 13)...
Description RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs 射频功率场效应晶体管N沟道增强型MOSFET的外

File Size 407.60K  /  12 Page

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    TQP369185 TQP369185-PCB

TriQuint Semiconductor
Part No. TQP369185 TQP369185-PCB
OCR Text ...less technologies such as cdma, w - cdma, and lte. in addition, the tqp36 9185 will work for other various applications within the dc to 6 ghz frequency range. pin # symbol 1 rf i n 3 rf o ut 2, 4 gn d ...
Description DC-6 GHz Gain Block

File Size 673.84K  /  8 Page

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    飞思卡尔半导体(中国)有限公司
Part No. MRF6S19060NBR1 MRF6S19060NR1
OCR Text ...c e l l u l a r r a d i o a n d w l l applications. ? typical 2 - carrier n - cdma performance: v dd = 28 volts, i dq = 610 ma, p out = 12 watts avg., full frequency band, is - 95 cdma (pilot, sync, paging, traffic codes 8 through 13)...
Description RF Power Field Effect Transistors 射频功率场效应晶体管

File Size 613.40K  /  16 Page

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    MRF6S9045NBR1 MRF6S9045NR1 MRF6S9045NR108

Freescale Semiconductor, Inc
Part No. MRF6S9045NBR1 MRF6S9045NR1 MRF6S9045NR108
OCR Text ... LIFETIME BUY 880 MHz, 10 W AVG., 28 V SINGLE N - CDMA LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs CASE 1265- 09, STYLE 1 TO - 270 - 2 PLASTIC MRF6S9045NR1 CASE 1337 - 04, STYLE 1 TO - 272 - 2 PLASTIC MRF6S9045NBR1 Table 1...
Description RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

File Size 701.09K  /  18 Page

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For w-cdma n-cdma Found Datasheets File :: 1961    Search Time::2.36ms    
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