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  -10 250v Datasheet PDF File

For -10 250v Found Datasheets File :: 14603    Search Time::0.891ms    
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    APT5040CNR

ADPOW[Advanced Power Technology]
Part No. APT5040CNR
OCR Text ...mperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/C C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitiv...250v 20 TJ =+150C 10 5 TJ =+25C 12 8 VDS=400V 4 2 1 20 40 60 80 100 Qg , TOTAL ...
Description POWER MOS IV 500V 13.0A 0.400 Ohm
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
File Size 52.43K  /  4 Page

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    APT50M50JVFR

ADPOW[Advanced Power Technology]
Part No. APT50M50JVFR
OCR Text ...mperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/C C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitiv...250v 16 100 50 TJ =+150C TJ =+25C 12 VDS=400V 8 10 5 4 200 400 600 800 1000 ...
Description POWER MOS V 500V 77A 0.050 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size 73.13K  /  4 Page

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    APT50M50JVR

Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
Part No. APT50M50JVR
OCR Text ...mperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/C C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitiv...250v 16 100 50 TJ =+150C TJ =+25C 12 VDS=400V 8 10 5 4 200 400 600 800 1000 ...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 500V 77A 0.050 Ohm
File Size 70.86K  /  4 Page

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    APT50M60JN

ADPOW[Advanced Power Technology]
Part No. APT50M60JN
OCR Text ...mperature: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS Characteristic / Test Conditions / Part Number Dr...250v 16 12 VDS=400V 8 10 5 TJ =-55C 4 200 400 600 800 1000 Qg, TOTAL GATE CHARGE (...
Description POWER MOS IV 500V 71A 0.060 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
File Size 60.22K  /  4 Page

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    APT8015JVFR APT8015

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ADPOW[Advanced Power Technology]
Part No. APT8015JVFR APT8015
OCR Text ...mperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/C C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitiv...250v VDS=400V TJ =+150C TJ =+25C 12 8 10 5 4 300 600 900 1200 1500 Qg, TOTAL GA...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 800V 44A 0.150 Ohm
File Size 77.92K  /  4 Page

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    APT8015 APT8015JVR

Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Advanced Power Technology, Ltd.
Part No. APT8015 APT8015JVR
OCR Text ...mperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/C C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitiv...250v VDS=400V TJ =+150C TJ =+25C 12 8 10 5 4 300 600 900 1200 1500 Qg, TOTAL GA...
Description POWER MOS V 800V 44A 0.150 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
File Size 75.34K  /  4 Page

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    APT8028JVR APT5010JVR

ADPOW[Advanced Power Technology]
Part No. APT8028JVR APT5010JVR
OCR Text ...mperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/C C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitiv...250v 12 VDS=400V 10 5 8 4 150 300 450 600 750 Qg, TOTAL GATE CHARGE (nC) FIGURE 12...
Description POWER MOS V 800V 28A 0.280 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size 71.26K  /  4 Page

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    APT8030B2VR

ADPOW[Advanced Power Technology]
Part No. APT8030B2VR
OCR Text ...mperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/C C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitiv...250v VDS=400V TJ =+150C TJ =+25C 12 8 10 5 4 100 200 300 400 500 600 Qg, TOTAL ...
Description POWER MOS V 800V 27A 0.300 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size 58.13K  /  4 Page

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    APT8030JVFR

ADPOW[Advanced Power Technology]
Part No. APT8030JVFR
OCR Text ...mperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/C C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitiv...250v VDS=400V TJ =+150C TJ =+25C 12 8 10 5 4 100 200 300 400 500 600 Qg, TOTAL ...
Description POWER MOS V 800V 25A 0.300 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size 69.94K  /  4 Page

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    APT8030JVR

ADPOW[Advanced Power Technology]
Part No. APT8030JVR
OCR Text ...mperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/C C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitiv...250v VDS=400V TJ =+150C TJ =+25C 12 8 10 5 4 100 200 300 400 500 600 Qg, TOTAL ...
Description POWER MOS V 800V 25A 0.300 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size 67.66K  /  4 Page

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