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  0.600a Datasheet PDF File

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    Mitsubishi Electric Corporation
Part No. QM600HD-M
OCR Text ...1.96~2.94 20~30 1.47~1.96 15~20 0.98~1.47 10~15 0.98~1.47 10~15 420 absolute maximum ratings (tj=25 c, unless otherwise noted) symbol v ce...600a, i b =1.2a Ci c =600a (diode forward voltage) i c =600a, v ce =2v v cc =200v, i c =600a, i b1 =...
Description MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE

File Size 64.25K  /  4 Page

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    Mitsubishi Electric Corporation
Part No. CM600HU-24H
OCR Text 0 b 3.66 0.01 93.0 0.25 c 3.15 80.0 d 2.44 0.01 62.0 0.25 e 0.53 13.5 f 0.37 9.5 g 0.57 14.5 dimensions inches millimeters h 0.96 24.5 j...600a, v ge = 15v, t j = 25 c C 2.9 3.7 volts i c = 600a, v ge = 15v, t j = 125 c C 2.85 C vol...
Description IGBT Modules:1200V

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    Mitsubishi Electric Corporation
Part No. CM600HU-12H
OCR Text 0 b 3.66 0.01 93.0 0.25 c 2.44 62.0 d 1.89 0.01 48.0 0.25 e 0.53 13.5 f 0.49 12.55 g 0.39 10.0 dimensions inches millimeters h 1.02 26.0...600a, v ge = 15v, t j = 25 c C 2.4 3.0 volts i c = 600a, v ge = 15v, t j = 125 c C 2.6 C volt...
Description IGBT Modules: 600V

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    Mitsubishi Electric Corporation
Part No. CM300DU-24H
OCR Text 0.110 - 0.5 tab j h h dimensions inches millimeters a 4.33 110.0 b 3.66 0.01 93.0 0.25 c 3.15 80.0 d 2.44 0.01 62.0 0.25 e 0.55 14.0 f 0...600a/ m s C C 300 ns diode reverse recovery charge q rr i e = 300a, di e /dt = -600a/ m s C 1.65 C ...
Description IGBT Modules:1200V

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    APTGT600A60G07

Microsemi Corporation
Part No. APTGT600A60G07
OCR Text ...0502 on www.microsemi.com q2 0/vbus q1 vbus out g1 g2 e2 e1 out vbus e1 g1 0/vbus g2 e2 symbol parameter max ratings unit v ces ...600a* @ tc = 80c application ? welding converters ? switched mode power supplies ? uninter...
Description Phase leg Trench Field Stop IGBT Power Module

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    DGT304RE04

Dynex Semiconductor
Part No. DGT304RE04
OCR Text 0 july 2004 features reverse blocking capability double side cooling high reliability in service high voltage capability fault pro...600a, v dm = 750v snubber cap cs = 1.5 f, di gq /dt = 15a/ s r l = (residual inductance 3 h) t ...
Description Reverse Blocking Gate Turn-off Thyristor

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    MAS110S

Dynex Semiconductor
Part No. MAS110S
OCR Text 0 DS4200-5.0 January 2000 APPLICATIONS q q q q High Frequency High Power Choppers And Inverters. Ultrasonic Generators. Welding. PWM ...600A peak, Tcase = 25oC At VDRM, Tcase = 125oC To 60% VDRM Tj = 125oC, Gate open circuit From 67% VD...
Description Fast Turn-off Asymmetric Thyristor/Diode Module

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    SEMIX603GAR066HDS10

Semikron International
Part No. SEMIX603GAR066HDS10
OCR Text 0 ? 16.04.2010 1 semix ? 3s gar trench igbt modules semix603gar066hds features ? homogeneous si ? trench = trenchgate technology ?v ce(sat)...600a v ge =15v chiplevel t j =25c 1.45 1.85 v t j = 150 c 1.7 2.1 v v ce0 t j =25c 0.9 1 v t j = 150...
Description Trench IGBT Modules

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