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JANSR2N 2779J 24S15 M63015FP SI4435DY 6KE200A CR1100SA HA17524
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  1.58 a Datasheet PDF File

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    IRF3415

IRF[International Rectifier]
Part No. IRF3415
OCR Text ... M3 srew Max. 43 30 150 200 1.3 20 590 22 20 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units a W W/C V mJ a mJ V/n...58 4) 1.15 (.04 5) M IN 1 2 3 L E a D a S S IG NM E NT S 1 - GaTE 2 - D R a IN 3 - S O U RC E ...
Description Power MOSFET(Vdss=150V/ Rds(on)=0.042ohm/ Id=43a)
Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43a)
Power MOSFET(Vdss=150V Rds(on)=0.042ohm Id=43a)

File Size 90.69K  /  8 Page

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    IRF36 IRF-36

VISAY[Vishay Siliconix]
Part No. IRF36 IRF-36
OCR Text ...5 3.3 3.0 2.8 2.6 2.4 2.25 2.10 1.95 1.85 1.40 RaTED DCR DC MaX. CURRENT () (ma) 0.15 0.16 0.17 0.19 0.21 0.24 0.28 0.32 0.36 0.41 0.47 0.24...58 0.63 0.72 0.77 0.84 0.94 1.03 1.12 1.22 1.34 1.47 1.62 1.80 3.7 4.2 4.6 5.1 5.8 6.4 7.0 7.7 8.5 9...
Description Inductors Epoxy Conformal Coated, axial Leaded

File Size 113.79K  /  1 Page

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    IRF3708 IRF3708L IRF3708S

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3708 IRF3708L IRF3708S
OCR Text ...Typ. --- 0.50 --- --- Max. 1.73 --- 62 40 Units C/W * When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note #aN-994 Notes through are on page 10...
Description Power MOSFET(Vdss=30V, Rds(on)max=12mohm, Id=62a) 功率MOSFET(减振钢板基本\u003d 30V的,的Rdson)最大值\u003d 12mohm,身份证\u003d 62a条)
Power MOSFET(Vdss=30V/ Rds(on)max=12mohm/ Id=62a)

File Size 137.00K  /  10 Page

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    IRF3710L IRF3710S

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3710L IRF3710S
OCR Text ...onds Max. 57 40 180 3.8 200 1.3 20 530 28 20 5.0 -55 to + 175 300 (1.6mm from case ) Units a W W W/C V mJ a mJ V/ns C Thermal Re...58 48 7.5 3000 640 330 Max. Units Conditions --- V VGS = 0V, ID = 250a --- V/C Reference to 25C, ...
Description Power MOSFET(Vdss=100V, Rds(on)=0.025ohm, Id=57a) 功率MOSFET(减振钢板基本\u003d 100V的,的Rds(on)\u003d 0.025ohm,身份证\u003d 57a条)
Power MOSFET(Vdss=100V/ Rds(on)=0.025ohm/ Id=57a)
Power MOSFET(Vdss=100V Rds(on)=0.025ohm Id=57a)

File Size 180.61K  /  10 Page

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    IRF3710 IRF3710PBF

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3710 IRF3710PBF
OCR Text ... M3 srew Max. 57 40 230 200 1.3 20 28 20 5.8 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units a W W/C V a mJ V/ns C ...58 45 47 D S Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Notes: ...
Description Power MOSFET(Vdss=100V, Rds(on)=23mohm, Id=57a) 功率MOSFET(减振钢板基本\u003d 100V的,的Rds(on)\u003d 23mohm,身份证\u003d 57a条)
Power MOSFET(Vdss=100V Rds(on)=23mohm Id=57a)
100V Single N-Channel HEXFET Power MOSFET in a TO-220aB package

File Size 92.57K  /  8 Page

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    IRF7106 IRF7106TR

IRF[International Rectifier]
Part No. IRF7106 IRF7106TR
OCR Text 1 8 HEXFET (R) Power MOSFET advanced Process Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount available in T...58 120 nC P-Channel T J = 25C, I F = -1.25a, di/dt = 100a/s -- 91 180 Intrinsic turn-on time is negl...
Description 20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss= -20V)

File Size 157.44K  /  7 Page

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    IRF840AL IRF840AS IRF840ASTRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF840aL IRF840aS IRF840aSTRR
OCR Text ..., for 10 seconds Max. 8.0 5.1 32 125 3.1 1.0 30 5.0 -55 to + 150 300 (1.6mm from case ) Units a W W/C V V/ns C Typical SMPS Topo...58 --- --- --- --- --- --- Typ. --- --- --- --- 11 23 26 19 1018 155 8.0 1490 42 56 Max. Units Co...
Description TRaNSISTOR | MOSFET | N-CHaNNEL | 500V V(BR)DSS | 8a I(D) | TO-263aB 晶体管| MOSFET的| N沟道| 500V五(巴西)直| 8a条(丁)|63aB
Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0a) 功率MOSFET(减振钢板基本\u003d 500V及的Rds(on)最大值\u003d 0.85ohm,身份证\u003d 8.0a
Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0a)

File Size 125.49K  /  10 Page

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    IRF840A

IRF[International Rectifier]
Part No. IRF840a
OCR Text ...6-32 or M3 screw Max. 8.0 5.1 32 125 1.0 30 5.0 -55 to + 150 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units a W W/C V V/ns C Ty...58 --- --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250a --- V/C Reference to 25C,...
Description Power MOSFET(Vdss=500V/ Rds(on)max=0.85ohm/ Id=8.0a)
Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0a)
Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0a)

File Size 87.92K  /  8 Page

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    IRF9520N

IRF[International Rectifier]
Part No. IRF9520N
OCR Text ...-4.0 4.8 -5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units a W W/C V mJ a mJ V/ns C Thermal Resistance Parameter RJ...58 4) 1.15 (.04 5) M IN 1 2 3 L E a D a S S IG NM E NT S 1 - GaTE 2 - D R a IN 3 - S O U RC E ...
Description Power MOSFET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8a)
Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8a)

File Size 91.94K  /  8 Page

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    IRF9530NL IRF9530NS IRF9530NSTRR

IRF[International Rectifier]
Part No. IRF9530NL IRF9530NS IRF9530NSTRR
OCR Text ...-8.4 7.9 -5.0 -55 to + 175 300 (1.6mm from case ) Units a W W W/C V mJ a mJ V/ns C Thermal Resistance Parameter RJC RJa Junction-to...58 45 46 7.5 760 260 170 Max. Units Conditions --- V VGS = 0V, ID = -250a --- V/C Reference to 25C, ...
Description Power MOSFET(Vdss=-100V/ Rds(on)=0.20ohm/ Id=-14a)
Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14a)

File Size 169.24K  /  10 Page

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