1200v 10ma high-voltage amplif pdf Datasheet P11 Description --- IC-ON-LINE


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1200v 10ma high-voltage amplif Datasheet PDF File

For 1200v 10ma high-voltage amplif Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |

				ADPOW[Advanced Power Technology]
Part No.	APT12060LVR APT12060B2VR
Description	POWER MOS V 1200v 20A 0.600 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	38.17K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT12080JVR
Description	POWER MOS V 1200v 15A 0.800 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
File Size	203.21K / 4 Page	View it Online	Download Datasheet


Part No.	STIP10 STI60 STI80 STI90 STIP805 STIP60
Description	SURGE ARRESTER GDT 90V SMD DIODE TVS 9.1V 600W BIDIR 5% SMB TRANSISTOR \| BJT \| NPN \| 900V V(BR)CEO \| 1A I(C) \| TO-5 DIODE TVS 47V 600W UNIDIR 5% SMB 晶体管\|晶体管\|叩\| 600V的五（巴西）总裁\| TO - 39封装 Triac; Thyristor Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:10ma; Current, It av:8A; Gate Trigger Current Max, Igt:10ma; Holding Current:15mA RoHS Compliant: Yes
File Size	125.32K / 1 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K4D263238E K4D263238E-GC25 K4D263238E-GC2A K4D263238E-GC33 K4D263238E-GC36 K4D263238E-GC40 K4D263238E-GC45
Description	1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL DIODE ZENER SINGLE 300mW 15.2Vz 10ma-Izt 0.02535 0.05uA-Ir 12 SOT-23 3K/REEL DIODE ZENER TRIPLE ISOLATED 200mW 15.2Vz 10ma-Izt 0.02535 0.05uA-Ir 12 SOT-363 3K/REEL DIODE ZENER TRIPLE ISOLATED 200mW 17.88Vz 10ma-Izt 0.02545 0.05uA-Ir 14 SOT-363 3K/REEL 100万x 32Bit的4银行图形双数据速率同步DRAM的双向数据选通和DLL DIODE ZENER SINGLE 300mW 17.9Vz 10ma-Izt 0.02545 0.05uA-Ir 14 SOT-23 3K/REEL 100万x 32Bit的4银行图形双数据速率同步DRAM的双向数据选通和DLL DIODE ZENER SINGLE 300mW 16.1Vz 10ma-Izt 0.02547 0.05uA-Ir 12 SOT-23 3K/REEL 100万x 32Bit的4银行图形双数据速率同步DRAM的双向数据选通和DLL DIODE ZENER TRIPLE ISOLATED 200mW 16.1Vz 10ma-Izt 0.02547 0.05uA-Ir 12 SOT-363 3K/REEL 100万x 32Bit的4银行图形双数据速率同步DRAM的双向数据选通和DLL
File Size	308.67K / 17 Page	View it Online	Download Datasheet

				Gilway Technical Lamp
Part No.	EA401 EA404 EA406 EA432 EA430 EA444GR EA444GY EA331 E109 E111 EA100
Description	Red, right angle, quad-level, mini LED. Lens diffused. Max.luminous intensity at 10ma 12.5mcd. Typ. forward voltage at 20mA 2.0V. Yellow, right angle, quad-level, mini LED. Lens diffused. Max.luminous intensity at 10ma 5.0mcd. Typ. forward voltage at 20mA 2.1V. Green, right angle, quad-level, mini LED. Lens diffused. Max.luminous intensity at 10ma 5.0mcd. Typ. forward voltage at 20mA 2.2V. Ultra bright green, right angle, quad LED. Lens diffused. Max.luminous intensity at 20mA: 60.0mcd. Typ. forward voltage at 20mA 2.2V. Ultra bright red, right angle, quad LED. Lens diffused. Max.luminous intensity at 20mA: 300.0mcd. Typ. forward voltage at 20mA 1.85V. Red & green, right angle, quad-level, mini LED. Lens white diffused. Max.luminous intensity at 10ma: 32.0mcd(red), 32.0mcd(green). Typ. forward voltage at 20mA: 2.0V(red), 2.2V(green). Green & yellow, right angle, quad-level, mini LED. Lens white diffused. Max.luminous intensity at 10ma: 32.0mcd(green), 20.0mcd(yellow). Typ. forward voltage at 20mA: 2.2V(green), 2.2V(yellow). Red, right angle, tri-level, T-1, LED. Lens diffused. Max.luminous intensity at 20mA 50mcd. Typ. forward voltage at 20mA 2.0V. Orange side viewing LED. Lens translucent. Typ.luminous intensity at 15mA 4.0mcd. Typ. forward voltage at 20mA 2.1V. Green side viewing LED. Lens translucent. Typ.luminous intensity at 15mA 4.0mcd. Typ. forward voltage at 20mA 2.1V. Ultra bright red, right angle, T-1 LED. Lens translucent. Max.luminous intensity at 20mA 500mcd. Typ. forward voltage at 20mA 1.85V.
File Size	330.21K / 6 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	RURP4120CC
Description	4A, 1200v Ultrafast Dual Diode(4A, 1200v 超快双二极管)
File Size	46.47K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology Ltd.
Part No.	APT12040L2LL
Description	POWER MOS 7 1200v 30A 0.400 Ohm Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
File Size	64.27K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technology Ltd.
Part No.	APT12031JLL
Description	POWER MOS 7 1200v 30A 0.310 Ohm Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	69.60K / 2 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FFB05U120S FFB05U120STM
Description	5.0A/1200v Ultra Fast Recovery Rectifier ULTRA FAST RECOVERY POWER RECTIFIER High voltage and high reliability
File Size	121.04K / 4 Page	View it Online	Download Datasheet

				Intersil, Corp. INTERSIL[Intersil Corporation]
Part No.	RURG30120 FN3399
Description	30A, 1200v Ultrafast Diode(30A, 1200v 超快速二极管) 30 A, 1200 V, SILICON, RECTIFIER DIODE, TO-247 30A/ 1200v Ultrafast Diode From old datasheet system
File Size	31.01K / 3 Page	View it Online	Download Datasheet

For 1200v 10ma high-voltage amplif Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |

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