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California Eastern Laboratories Duracell
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Part No. |
NE687M33-T3-a
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OCR Text |
... a 100 a 0 25 50 75 100 125 150 1 2 3 4 10 20 30 0 35 25 15 5 200 150 100 50 90 250 1 2 3 4 5 0.5 0.2 0.1 0 0.4 0.3 0.6 mounted on glass epoxy pcb (1.08 cm 2 1.0 mm (t) ) collector current i c (ma ) base to emitter v oltage ... |
Description |
NECs NPN SILICON TRaNSISTOR
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File Size |
307.59K /
6 Page |
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California Eastern Laboratories
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Part No. |
NE851M13-T3-a
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OCR Text |
... 3. collector pin connections 0.125 +0.1 ?0.05 0.50.05 0.1 0.1 0.2 +0.1 ?0.05 0.35 0.7 0.35 0.15 +0.1 ?0.05 0.15 +0.1 ?0.05 1.0 +0.1...a = 25 c) ambient temperature, t a ( c) total power dissipation, p tot (mw) total power dissipa... |
Description |
NPN SILICON TRaNSISTOR
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File Size |
203.75K /
10 Page |
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it Online |
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California Eastern Laboratories
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Part No. |
NE894M13-T3-a
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OCR Text |
... 3. collector pin connections 0.125 +0.1 ?0.05 0.50.05 0.1 0.1 0.2 +0.1 ?0.05 0.35 0.7 0.35 0.15 +0.1 ?0.05 0.15 +0.1 ?0.05 1.0 ...a = 25c) ambient temperature, t a (c) total power dissipation, p tot (mw) total power dissipa... |
Description |
NPN SILICON TRaNSISTOR
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File Size |
424.43K /
9 Page |
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it Online |
Download Datasheet |
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Duracell
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Part No. |
NE894M13-T3-a
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OCR Text |
... 3. collector pin connections 0.125 +0.1 ?0.05 0.50.05 0.1 0.1 0.2 +0.1 ?0.05 0.35 0.7 0.35 0.15 +0.1 ?0.05 0.15 +0.1 ?0.05 1.0 ...a = 25c) ambient temperature, t a (c) total power dissipation, p tot (mw) total power dissipa... |
Description |
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File Size |
424.51K /
9 Page |
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DIODES INC
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Part No. |
aH175-WL-B-a
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OCR Text |
...t a ( c) 105 110 115 120 125 130 135 140 150 p d (mw) 198 176 154 132 110 88 66 44 0 power dissipation curve 0 100 200 300 400 500 600 0 25 50 75 100 125 150 t a ( o c) p d (m w )
ah175 hall effect latch for h... |
Description |
MaGNETIC FIELD SENSOR-HaLL EFFECT, -1.5-6mT, 0.30-0.40V, RECTaNGULaR, SURFaCE MOUNT
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File Size |
111.89K /
8 Page |
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it Online |
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California Eastern Laboratories
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Part No. |
NE651R479a-T1-a
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OCR Text |
....0 t ch channel temperature c +125 note: 1. recommended maximum gain compression is 3.0 db at v ds = 4.2 to 5.5 v. typical 3.5 v rf ...a = 25 c) transconductance and drain current vs. gate voltage -1.20 100 0.00 1.50 0.30 0.60 0.90 ... |
Description |
MEDIUM POWER Gaas HJ-FET
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File Size |
453.74K /
11 Page |
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it Online |
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Price and Availability
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