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    IRF7807V

IRF[International Rectifier]
Part No. IRF7807V
OCR Text ...30 20 8.3 6.6 66 2.5 1.6 -55 to 150 2.5 66 C A W A Units V 3/1/01 IRF7807V Electrical Characteristics Parameter Drain-to-Source Brea...sec) Figure 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 6 www.irf.c...
Description N Channel Application Specific MOSFET

File Size 126.34K  /  8 Page

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    IRF7807 IRF7807A IRF7807ATR IRF7807TR

IRF[International Rectifier]
Part No. IRF7807 IRF7807A IRF7807ATR IRF7807TR
OCR Text ...GS ID 8.3 6.6 66 2.5 1.6 -55 to 150 2.5 66 C A IRF7807 30 12 8.3 6.6 66 W A IRF7807A Units V Thermal Resistance Parameter Maximum Junctio...sec. Typ = measured - Qoss Devices are 100% tested to these parameters. 2 www.irf.com IRF78...
Description 8.3 A, 30 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET
Chip-Set for DC-DC Converters
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package

File Size 238.61K  /  8 Page

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    IRF7811AV IRF7811AVTR

International Rectifier
Part No. IRF7811AV IRF7811AVTR
OCR Text ...20 10.8 11.8 100 2.5 3.0 -55 to 150 2.5 50 C A W A Units V www.irf.com 1 12/13/00 IRF7811AV Electrical Characteristics Parameter...sec. Typ = measured - Qoss Typical values of RDS(on) measured at VGS = 4.5V, Q G, QSW and QOSS measu...
Description Si, SMALL SIGNAL, FET, MS-012AA
N-Channel Application-Specific MOSFETs

File Size 85.36K  /  6 Page

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    IRF7811A IRF7809A IRF7811ATR

International Rectifier
Part No. IRF7811A IRF7809A IRF7811ATR
OCR Text ...ID 14.5 14.2 100 2.5 2.4 -55 to 150 2.5 50 C A IRF7809A 30 12 11.4 11.2 100 W A IRF7811A 28 Units V www.irf.com 1 01/19/00 IRF7809...sec. Typ = measured - Qoss Devices are 100% tested to these parameters. 2 www.irf.com IRF78...
Description PROVISIONAL DATASHEET
Chipset for DC-DC Converters
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package

File Size 124.48K  /  4 Page

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    IRF840AL IRF840AS IRF840ASTRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF840AL IRF840AS IRF840ASTRR
OCR Text ...32 125 3.1 1.0 30 5.0 -55 to + 150 300 (1.6mm from case ) Units A W W/C V V/ns C Typical SMPS Topologies l l l Two Transistor Fo...sec) www.irf.com 5 IRF840AS/L 1 5V 1200 EAS , Single Pulse Avalanche Energy (mJ) ...
Description TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 8A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 500V五(巴西)直| 8A条(丁)|63AB
Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) 功率MOSFET(减振钢板基本\u003d 500V及的Rds(on)最大值\u003d 0.85ohm,身份证\u003d 8.0A
Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)

File Size 125.49K  /  10 Page

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    IRF840A

IRF[International Rectifier]
Part No. IRF840A
OCR Text ...5.1 32 125 1.0 30 5.0 -55 to + 150 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V V/ns C Typical SMPS Topologies: l l l ...sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 ...
Description Power MOSFET(Vdss=500V/ Rds(on)max=0.85ohm/ Id=8.0A)
Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A)
Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)

File Size 87.92K  /  8 Page

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    IRF9230 JANTXV2N6806 JANTX2N6806

IRF[International Rectifier]
Part No. IRF9230 JANTXV2N6806 JANTX2N6806
OCR Text ...0.60 20 66 -6.5 7.5 -5.0 -55 to 150 300 (0.063 in. (1.6mm) from case for 10s) 11.5 (typical) Units A W W/C V mJ A mJ V/ns o C g...sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to...
Description TRANSISTORS P-CHANNEL(Vdss=-200V, Rds(on)=0.80ohm, Id=-6.5A)
CAP CER 250VAC 82PF 5% SL 1808
6.5 A, 200 V, 0.92 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA

File Size 148.64K  /  7 Page

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    IRF9240 IRF9240-SMD

TT electronics Semelab Limited
International Rectifier
SEME-LAB[Seme LAB]
Part No. IRF9240 IRF9240-SMD
OCR Text ...ZO = 4.7W 4 -11 0.35 6 1100 375 150 70 55 15 20 10 12 8 5.0 12.5 Typ. 30 15 18 12 nH nH Max. Unit 1.0 C/W C/W C/W C Unit A V ns ns 1300 450 ...sec. SOURCE - DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristic Continuous Source Current (B...
Description CAP CER 250VAC 150PF X7R 1808
P-CHANNEL POWER MOSFET

File Size 25.33K  /  2 Page

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    IRF9410

International Rectifier
Part No. IRF9410
OCR Text ....5 1.6 70 4.2 0.25 5.0 -55 to + 150 Units V Pulsed Drain Current Continuous Source Current (Diode Conduction) TA = 25C Maximum Power ...sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient IRF9410 Packa...
Description Power MOSFET(Vdss=30V, Rds(on)=0.030ohm)

File Size 103.18K  /  7 Page

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    IRF9520NL IRF9520NS

IRF[International Rectifier]
Part No. IRF9520NL IRF9520NS
OCR Text ..., IS = -4.0A, VGS = 0V --- 100 150 ns TJ = 25C, IF = -4.0A ___ 420 630 nC di/dt = -100A/s Intrinsic turn-on time is negligible (turn-on is...sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case - V DD IRF9...
Description Power MOSFET(Vdss=-100V/ Rds(on)=0.48ohm/ Id=-6.8A)
Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A)
Power MOSFET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8A)

File Size 151.66K  /  10 Page

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