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  180-ohm Datasheet PDF File

For 180-ohm Found Datasheets File :: 6035    Search Time::2.844ms    
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    GA150TS60U

International Rectifier
Integrated Circuit Systems
Part No. GA150TS60U
OCR Text ...145 336 227 6.0 12 19 14000 860 180 172 113 9696 2000 Max. Units Conditions 937 VCC = 400V 130 nC IC = 94A 317 TJ = 25C -- RG1 = 27, RG2 = 0...Ohm VGE = 15V VCC = 360V IC = 300 A IC = 150 A 20 10 IC = 75 A 15 10 0 10 20 30...
Description HALF-BRIDGE IGBT INT-A-PAK Ultra-FastTM Speed IGBT

File Size 221.41K  /  11 Page

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    GA75TS60U

IRF[International Rectifier]
Part No. GA75TS60U
OCR Text ...- -- Typ. 340 48 120 110 94 250 180 1.95 4.4 6.35 7880 770 98 133 94 6274 2061 Max. Units Conditions 510 VCC = 400V, VGE = 15V 72 nC IC = 75...Ohm VGE = 15V VCC = 360V 8 IC = 150 A 10 IC = 75 A IC = 37.5 A 7 6 5 0 10 20 3...
Description    HALF-BRIDGE IGBT INT-A-PAK

File Size 213.44K  /  10 Page

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    IRFU110 IRFR110 FN3275

HARRIS SEMICONDUCTOR
Intersil Corporation
Part No. IRFU110 IRFR110 FN3275
OCR Text ...41 2.0 7.6 24 14 14 5.2 1.5 2.2 180 82 15 4.5 MAX 4 25 250 100 0.540 11 36 21 21 7.7 - UNITS V V A A A nA S ns ns ns ns nC nC nC pF pF pF nH Drain to Source Breakdown Voltage Gate to Threshold Voltage Zero Gate Voltage Drain Curre...
Description From old datasheet system
4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs
(IRFR110 / IRFU110) N-Channel Power MOSFETs

File Size 59.43K  /  7 Page

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    MTP12N06EZL MTP12N06EZL_D ON2543 MTP12N06 MTP12N06EZL-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
http://
Part No. MTP12N06EZL MTP12N06EZL_D ON2543 MTP12N06 MTP12N06EZL-D
OCR Text ...12 AMPERES 60 VOLTS RDS(on) = 0.180 OHM (R) D S CASE 221A-06, Style 5 TO-220AB MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Drain-Source Voltage Drain-Gate Voltage (RGS = 1.0 M) Gate-Source Voltage -- Continuous ...
Description TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.180 OHM

File Size 221.74K  /  8 Page

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    MTP12N10E MTP12N10E_D ON2545 MTP12N10E-D

ON Semiconductor
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
Part No. MTP12N10E MTP12N10E_D ON2545 MTP12N10E-D
OCR Text ...IN-TO-SOURCE VOLTAGE (VOLTS) 180 200 VR = 80% OF RATED BVDSS VdsL = Vf + Li dls/dt Figure 12. Commutating Safe Operating Area (CSOA) Figure 13. Commutating Safe Operating Area Test Circuit Motorola reserves the right to m...
Description TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.16 OHM
TMOS POWER FET 12 AMPERES 60 VOLTS
From old datasheet system

File Size 239.56K  /  6 Page

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    MTP1306 MTP1306_D ON2551 ON2550

ON Semi
MOTOROLA[Motorola, Inc]
Part No. MTP1306 MTP1306_D ON2551 ON2550
OCR Text ...5.0 V ID , DRAIN CURRENT (AMPS) 180 160 140 120 100 80 60 40 20 0 2.0 125C TJ = -55C 2.5 3.0 3.5 4.0 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 4.5 25C VDS 10 V Figure 1. On-Region Characteristics RDS(on) , DRAIN-TO-SOURCE ON-RESISTANCE (OHMS...
Description TMOS POWER FET 75 AMPERES 30 VOLTS RDS(on) = 0.0065 OHM
From old datasheet system

File Size 168.21K  /  8 Page

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    MTP15N06VL MTP15N06VL_D ON2553

Motorola, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
Part No. MTP15N06VL MTP15N06VL_D ON2553
OCR Text ...Hz) Ciss Coss Crss -- -- -- 570 180 45 800 250 90 pF (Cpk 2.0) (3) VGS(th) 1.0 -- (Cpk 2.0) (3) RDS(on) -- VDS(on) -- -- gFS 8.0 -- -- 10 1.5 1.3 -- mhos 0.075 0.085 Vdc 1.5 4.0 2.0 -- Vdc mV/C Ohm (Cpk 2.0) (3) V(BR)DSS 60 -- IDSS -- --...
Description TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.085 OHM
From old datasheet system

File Size 215.91K  /  8 Page

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    MTP3055 MTP3055V MTP3055V_D ON2588

Motorola Mobility Holdings, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
Part No. MTP3055 MTP3055V MTP3055V_D ON2588
OCR Text ...ss Crss -- -- -- 410 130 25 500 180 50 pF VGS(th) 2.0 -- RDS(on) VDS(on) -- -- gFS 4.0 1.3 -- 5.0 2.2 1.9 -- mhos -- 2.7 5.4 0.10 4.0 -- 0.15 Vdc mV/C Ohm Vdc V(BR)DSS 60 -- IDSS -- -- IGSS -- -- -- -- 10 100 100 nAdc -- 65 -- -- Vdc mV/C A...
Description TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM TMOS是功率场效应晶体02安培的RDSon)\u003d 0.15欧姆
From old datasheet system

File Size 160.18K  /  8 Page

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    MTP60N06 MTP60N06HD MTP60N06HD_D ON2633

MOTOROLA[Motorola, Inc]
ON Semi
Part No. MTP60N06 MTP60N06HD MTP60N06HD_D ON2633
OCR Text ... TL Value 60 60 20 30 60 42.3 180 150 1.0 - 55 to 175 540 1.0 62.5 260 Unit Vdc Vdc Vdc Vpk Adc Apk Watts W/C C mJ C/W C Designer's Dat...Ohm (Cpk 2.0) (3) V(BR)DSS 60 -- IDSS -- -- IGSS -- -- 100 -- -- 10 100 nAdc -- 71 -- -- Vdc mV/C A...
Description From old datasheet system
TMOS POWER FET 60 AMPERES 50 VOLTS
TMOS POWER FET 60 AMPERES 60 VOLTS RDS(on) = 0.014 OHM

File Size 216.88K  /  8 Page

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    MTP8N06 MTP8N06E

Motorola, Inc.
MOTOROLA[Motorola, Inc]
Part No. MTP8N06 MTP8N06E
OCR Text ...Hz) Ciss Coss Crss -- -- -- 424 180 45 570 250 90 pF VGS(th) 2.0 -- RDS(on) VDS(on) -- -- gFS 3.0 0.7 -- 4.8 1.2 1.0 -- mhos -- 3.0 5.0 0.087 4.0 -- 0.12 Vdc mV/C Ohm Vdc V(BR)DSS 60 -- IDSS -- -- IGSS -- -- -- -- 10 100 100 nAdc -- 63 -- -...
Description TMOS POWER FET 8.0 AMPERES 60 VOLTS RDS(on) = 0.12 OHM

File Size 212.56K  /  8 Page

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