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TT electronics Semelab Limited Semelab(Magnatec)
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Part No. |
SML100A9
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Description |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω)(N沟道增强高电压功率MOS场效应管(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω))
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File Size |
20.76K /
2 Page |
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SemeLAB SEME-LAB[Seme LAB]
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Part No. |
SML80A12 SML100A9
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Description |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:800V,Id(cont):11.5A,Rds(on):0.650Ω)(N沟道增强高电压功率MOS场效应管(Vdss:800V,Id(cont):11.5A,Rds(on):0.650Ω))
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File Size |
20.46K /
2 Page |
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SemeLAB SEME-LAB[Seme LAB]
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Part No. |
SML80H12 SML100H11
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Description |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:800V,Id(cont):11.5A,Rds(on):0.67Ω)(N沟道增强高电压功率MOS场效应管(Vdss:800V,Id(cont):11.5A,Rds(on):0.67Ω))
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File Size |
26.03K /
2 Page |
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it Online |
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Micron Technology, Inc.
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Part No. |
MT55L128L32P1 MT55L256V18P1 MT55L256L18P1 MT55L128L36P1 MT55L128V32P1
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Description |
3.3V I/O28K x 32,Flow-Through ZBT SRAM(3.3V输入/输出,4Mb流通式同步静态存储器) 2.5v I/O56K x 18,Flow-Through ZBT SRAM(2.5v输入/输出,4Mb流通式同步静态存储器) 3.3V I/O56K x 18,Flow-Through ZBT SRAM(3.3V输入/输出,4Mb流通式同步静态存储器) 3.3V的I / O56 × 18,流量通过ZBT SRAM的电压(3.3V输入/输出Mb的流通式同步静态存储器 3.3V I/O28K x 36,Flow-Through ZBT SRAM(3.3V或输输出,4Mb流通式同步静态存储器) 3.3V的I / O28K的36,流量通过ZBT SRAM的电压(3.3V或输输出Mb的流通式同步静态存储器 2.5v I/O28K x 32,Flow-Through ZBT SRAM(2.5v输入/输出,4Mb流通式同步静态存储器) 2.5vI / O28K的32,流量通过ZBT SRAM的电压(2.5v输入/输出Mb的流通式同步静态存储器
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File Size |
426.03K /
25 Page |
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it Online |
Download Datasheet
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Price and Availability
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